SUM60P05-11LT Datasheet

SUM60P05-11LT
Vishay Siliconix
P-Channel 55-V (D-S) MOSFET with Sensing Diode
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
- 55
rDS(on) (Ω)
ID (A)
0.011 at VGS = - 10 V
- 60a
0.0175 at VGS = - 4.5 V
- 60a
• TrenchFET® Power MOSFETS Plus
Temperature Sensing Diode
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
APPLICATIONS
D2PAK-5L
• Industrial
S
T1
1 2 3 4 5
D1
G
G
S
T2
T1
Ordering Information: SUM60P05-11LT
SUM60P05-11LT-E3 (Lead (Pb)-free)
D2
T2
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 55
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)d
TC = 25 °C
TC = 100 °C
ID
- 60a
- 250
Continuous Diode Current (Diode Conduction)d
IS
- 60a
Avalanche Current
IAR
- 60a
EAR
180
Repetitive Avalanche Energy
b
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
PD
V
- 60a
IDM
Pulsed Drain Current
Unit
200c
3.75d
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
0.75
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientd
PCB Mountd
Junction-to-Case
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71748
S-80274-Rev. B, 11-Feb-08
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1
SUM60P05-11LT
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VGS = 0 V, ID = - 250 µA
- 55
VGS(th)
VDS = VGS, IDS = - 250 µA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
± 100
VDS = - 44 V, VGS = 0 V
-1
VDS = - 44 V, VGS = 0 V, TJ = 175 °C
- 250
VDS = - 5 V, VGS = - 10 V
- 120
VGS = - 10 V, ID = - 30 A
Drain-Source On-State Resistancea
rDS(on)
V
nA
µA
A
0.009
0.011
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
0.0175
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
0.022
VGS = - 4.5 V, ID = - 20 A
Ω
0.0175
Sense Diode Forward Voltage
VFD
VDS = - 25 V, IF = - 250 µA
- 770
- 830
Sense Diode Forward Voltage Increase
ΔVF
From IF = - 125 µA to IF = - 250 µA
- 25
- 55
Forward Transconductancea
gfs
VDS = - 25 V, ID = - 30 A
50
mV
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
c
tr
Turn-Off Delay Timec
td(off)
Rise Time
Fall Timec
6450
VGS = 0 V, VDS = - 25 V, f = 1 MHz
pF
1050
520
107
VDS = - 30 V, VGS = - 10 V, ID = - 60 A
nC
28
22
VDD = - 30 V, RL = 0.6 Ω
ID ≅ - 60 A, VGEN = - 10 V, RG = 2.5 Ω
tf
15
25
190
325
145
220
265
450
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
- 60
Pulsed Current
ISM
- 200
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 60 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = - 60 A, di/dt = 100 A/µs
A
- 1.1
- 1.5
V
55
110
ns
- 1.6
- 2.0
A
0.04
12
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71748
S-80274-Rev. B, 11-Feb-08
SUM60P05-11LT
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
200
VGS = 10 thru 6 V
TC = - 55 °C
200
5V
I D - Drain Current (A)
I D - Drain Current (A)
160
120
80
4V
25 °C
150
125 °C
100
50
40
3V
0
0
0
2
4
6
8
0
10
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
100
TC = - 55 °C
25 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
80
125 °C
60
40
20
0.024
0.018
VGS = 4.5 V
0.012
VGS = 10 V
0.006
0.000
0
0
20
40
60
80
100
0
120
20
40
VGS - Gate-to-Source Voltage (V)
80
100
120
I D - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
8000
VGS - Gate-to-Source Voltage (V)
Ciss
6000
C - Capacitance (pF)
60
4000
2000
Coss
Crss
0
0
VGS = 30 V
ID = 50 A
16
12
8
4
0
11
22
33
44
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71748
S-80274-Rev. B, 11-Feb-08
55
0
50
100
150
200
Qg - Total Gate Charge (nC)
Gate Charge
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SUM60P05-11LT
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
(Normalized)
r DS(on) - On-Resistance
1.6
1.2
0.8
TJ = 150 °C
10
TJ = 25 °C
0.4
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.2
TJ - Junction Temperature (°C)
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
70
ID = 250 µA
65
IAV (A) at TA = 150 °C
10
IAV (A) at TA = 25 °C
V(BR)DSS (V)
I Dav (A)
100
60
55
1
0.1
0.00001
0.001
0.0001
0.1
0.01
50
- 50
1
- 25
0
25
50
75
100
125
tin (s)
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
1.0
150
175
0.01
0.8
ID = 250 µA
0.001
ID = 125 µA
I F (A)
VF (V)
0.6
TJ = 150 °C
0.0001
0.4
TJ = 25 °C
0.00001
0.2
0.0
0.000001
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Sense Diode Forward Voltage vs. Temperature
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4
0
0.2
0.4
0.6
0.8
1.0
VF (V)
Sense Diode Forward Voltage
Document Number: 71748
S-80274-Rev. B, 11-Feb-08
SUM60P05-11LT
Vishay Siliconix
THERMAL RATINGS
70
1000
40
30
20
1 ms
10 ms
10
100 ms
DC
TC = 25 °C
Single Pulse
1
10
0
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
0.1
0.1
1
* VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
10 µs
100 µs
Limited
by rDS(on)*
100
50
I D - Drain Current (A)
I D - Drain Current (A)
60
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71748.
Document Number: 71748
S-80274-Rev. B, 11-Feb-08
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Revision: 02-Oct-12
1
Document Number: 91000