SUM110N02-03P New Product Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0032 @ VGS = 10 V 110a 0.0052 @ VGS = 4.5 V 110a V(BR)DSS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D Load Switch D TO-263 G DRAIN connected to TAB G D S Top View S SUM110N02-03P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 100_C Pulsed Drain Current ID IDM TC = 25_C Maximum Power Dissipationb TA = 25_Cd Operating Junction and Storage Temperature Range Unit V 110a 102 A 300 120c PD 3.75 W TJ, Tstg -55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case RthJA 40 RthJC 1.25 _ _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72096 S-22451—Rev. A, 20-Jan-03 www.vishay.com 1 SUM110N02-03P New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) V VDS = 16 V, VGS = 0 V, TJ = 125_C 50 VDS = 16 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) gfs 0.0026 mA m 0.0032 0.0048 VGS = 10 V, ID = 30 A, TJ = 175_C 0.0055 VDS = 15 V, ID = 30 A nA A VGS = 10 V, ID = 30 A, TJ = 125_C 0.0042 VGS = 4.5 V, ID = 20 A Forward Transconductancea 3 W 0.052 15 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 750 Total Gate Chargeb Qg 40 Gate-Source Chargeb Qgs 14 Gate-Drain Chargeb Qgd 13 Gate Resistance RG 0.85 td(on) 15 25 Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb tr td(off) 5100 VGS = 0 V, VDS = 10 V, f = 1 MHz VDS = 10V, VGS = 4.5 V, ID = 110 A VDD = 10 V, RL = 0.2 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W tf 1650 pF 60 nC W 11 20 45 70 10 15 ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 110 Pulsed Current ISM 300 Forward Voltagea VSD Reverse Recovery Time IF = 110 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 50 A, di/dt = 100 A/ms m A 1.1 1.5 V 45 70 ns 1.8 2.7 A 0.041 0.095 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72096 S-22451—Rev. A, 20-Jan-03 SUM110N02-03P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 Transfer Characteristics 200 VGS = 10 thru 5 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 4V 150 100 50 0 2 4 6 8 80 TC = 125_C -55 _C 40 3V 0 120 25_C 0 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.0060 TC = -55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 160 25_C 120 125_C 80 40 0 0.0045 VGS = 4.5 V 0.0030 VGS = 10 V 0.0015 0.0000 0 15 30 45 0 60 20 40 ID - Drain Current (A) 80 100 ID - Drain Current (A) Capacitance Gate Charge 10 7000 V GS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 60 5000 4000 3000 Coss 2000 Crss 1000 0 VDS = 10 V ID = 50 A 8 6 4 2 0 0 5 10 15 VDS - Drain-to-Source Voltage (V) Document Number: 72096 S-22451—Rev. A, 20-Jan-03 20 0 20 40 60 80 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N02-03P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 VGS = 10 V ID = 30 A I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 1.6 100 1.4 1.2 1.0 TJ = 150_C 10 TJ = 25_C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 30 V(BR)DSS (V) 28 ID = 10 mA 26 24 22 20 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72096 S-22451—Rev. A, 20-Jan-03 SUM110N02-03P New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 120 Limited by rDS(on) 100 10 ms 100 ms I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 1 20 0 1 ms 10 ms 100 ms dc 10 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 72096 S-22451—Rev. A, 20-Jan-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1