SUM110N02-03P Datasheet

SUM110N02-03P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.0032 @ VGS = 10 V
110a
0.0052 @ VGS = 4.5 V
110a
V(BR)DSS (V)
20
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous
Rectifier
APPLICATIONS
D Synchronous Buck DC/DC Conversion
- Desktop
- Server
D Load Switch
D
TO-263
G
DRAIN connected to TAB
G
D S
Top View
S
SUM110N02-03P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
_
TC = 25_C
TC = 100_C
Pulsed Drain Current
ID
IDM
TC = 25_C
Maximum Power Dissipationb
TA = 25_Cd
Operating Junction and Storage Temperature Range
Unit
V
110a
102
A
300
120c
PD
3.75
W
TJ, Tstg
-55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB
Mount)d
Junction-to-Case
RthJA
40
RthJC
1.25
_
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72096
S-22451—Rev. A, 20-Jan-03
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SUM110N02-03P
New Product
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
20
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 16 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
V
VDS = 16 V, VGS = 0 V, TJ = 125_C
50
VDS = 16 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
rDS(on)
gfs
0.0026
mA
m
0.0032
0.0048
VGS = 10 V, ID = 30 A, TJ = 175_C
0.0055
VDS = 15 V, ID = 30 A
nA
A
VGS = 10 V, ID = 30 A, TJ = 125_C
0.0042
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
3
W
0.052
15
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
750
Total Gate Chargeb
Qg
40
Gate-Source Chargeb
Qgs
14
Gate-Drain Chargeb
Qgd
13
Gate Resistance
RG
0.85
td(on)
15
25
Turn-On Delay Timeb
Rise
Timeb
Turn-Off Delay Timeb
Fall Timeb
tr
td(off)
5100
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10V, VGS = 4.5 V, ID = 110 A
VDD = 10 V, RL = 0.2 W
ID ^ 110 A, VGEN = 10 V, RG = 2.5 W
tf
1650
pF
60
nC
W
11
20
45
70
10
15
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
IS
110
Pulsed Current
ISM
300
Forward Voltagea
VSD
Reverse Recovery Time
IF = 110 A, VGS = 0 V
trr
Peak Reverse Recovery Current
IRM
Reverse Recovery Charge
Qrr
IF = 50 A, di/dt = 100 A/ms
m
A
1.1
1.5
V
45
70
ns
1.8
2.7
A
0.041
0.095
mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
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Document Number: 72096
S-22451—Rev. A, 20-Jan-03
SUM110N02-03P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
Transfer Characteristics
200
VGS = 10 thru 5 V
160
I D - Drain Current (A)
I D - Drain Current (A)
200
4V
150
100
50
0
2
4
6
8
80
TC = 125_C
-55 _C
40
3V
0
120
25_C
0
10
0
VDS - Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
200
0.0060
TC = -55_C
r DS(on) - On-Resistance ( W )
g fs - Transconductance (S)
160
25_C
120
125_C
80
40
0
0.0045
VGS = 4.5 V
0.0030
VGS = 10 V
0.0015
0.0000
0
15
30
45
0
60
20
40
ID - Drain Current (A)
80
100
ID - Drain Current (A)
Capacitance
Gate Charge
10
7000
V GS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
60
5000
4000
3000
Coss
2000
Crss
1000
0
VDS = 10 V
ID = 50 A
8
6
4
2
0
0
5
10
15
VDS - Drain-to-Source Voltage (V)
Document Number: 72096
S-22451—Rev. A, 20-Jan-03
20
0
20
40
60
80
Qg - Total Gate Charge (nC)
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SUM110N02-03P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
VGS = 10 V
ID = 30 A
I S - Source Current (A)
r DS(on) - On-Resistance (W)
(Normalized)
1.6
100
1.4
1.2
1.0
TJ = 150_C
10
TJ = 25_C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
0
175
0.3
TJ - Junction Temperature (_C)
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
30
V(BR)DSS (V)
28
ID = 10 mA
26
24
22
20
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
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Document Number: 72096
S-22451—Rev. A, 20-Jan-03
SUM110N02-03P
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
120
Limited
by rDS(on)
100
10 ms
100 ms
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
1
20
0
1 ms
10 ms
100 ms
dc
10
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
TC - Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72096
S-22451—Rev. A, 20-Jan-03
www.vishay.com
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Document Number: 91000
Revision: 18-Jul-08
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