SUM40N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 40a 0.017 @ VGS = 4.5 V 40a V(BR)DSS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Desktop or Server CPU Core D Game Station D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information: SUM40N02-09P SUM40N02-09P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 100_C Pulsed Drain Current ID IDM TC = 25_C Maximum Power Dissipationb TA = 25_C d Operating Junction and Storage Temperature Range PD Unit V 40a 40a A 100 93c 3.75 W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case RthJA 40 RthJC 1.6 _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72110 S-32523—Rev. C, 08-Dec-03 www.vishay.com 1 SUM40N02-09P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.85 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 20 V, VGS = 0 V, TJ = 125_C 50 VDS = 20 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 100 VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea rDS(on) gfs 0.008 nA mA m 0.0095 0.014 VGS = 10 V, ID = 20 A, TJ = 175_C 0.016 VDS = 10 V, ID = 20 A V A VGS = 10 V, ID = 20 A, TJ = 125_C 0.0135 VGS = 4.5 V, ID = 20 A Forward Transconductancea 3 W 0.017 15 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 275 Total Gate Chargeb Qg 10.5 Gate-Source Chargeb Qgs 4.2 Gate-Drain Chargeb Qgd Gate Resistance Rg Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb 1300 VDS = 10 V,, VGS = 4.5 V,, ID = 40 A tr pF 16 nC 4.0 2 td(on) td(off) 470 VGS = 0 V, VDS = 10 V, f = 1 MHz VDD = 10 V, RL = 0.25 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W tf 4.0 6.8 8 12 10 15 25 40 12 20 W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 40 Pulsed Current ISM 100 Forward Voltagea VSD Reverse Recovery Time IF = 40 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 40 A, di/dt = 100 A/ms m A 1.1 1.5 V 25 40 ns 0.7 1.1 A 0.009 0.022 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72110 S-32523—Rev. C, 08-Dec-03 SUM40N02-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 Transfer Characteristics 100 VGS = 10 thru 6 V 80 I D − Drain Current (A) I D − Drain Current (A) TC = −55_C 5V 80 60 4V 40 20 0 2 4 6 8 60 125_C 40 20 3V 0 25_C 0 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 60 0.030 TC = −55_C 25_C 40 r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) 50 125_C 30 20 10 0 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) 100 16 20 Gate Charge V GS − Gate-to-Source Voltage (V) 10 1600 C − Capacitance (pF) 80 ID − Drain Current (A) Capacitance 2000 60 Ciss 1200 800 Coss 400 Crss 0 VDS = 10 V ID = 40 A 8 6 4 2 0 0 4 8 12 16 VDS − Drain-to-Source Voltage (V) Document Number: 72110 S-32523—Rev. C, 08-Dec-03 20 0 4 8 12 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM40N02-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.6 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 1.4 I S − Source Current (A) r DS(on) − On-Resistance (W) (Normalized) VGS = 10 V ID = 20 A 1.2 1.0 0.8 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 10 TJ = 25_C 1 0 175 0.3 TJ − Junction Temperature (_C) V(BR)DSS (V) 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 30 28 0.6 ID = 250 mA 26 24 22 20 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 4 Document Number: 72110 S-32523—Rev. C, 08-Dec-03 SUM40N02-09P Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 0 10, 100 ms 1 ms 10 10 ms dc, 100 ms 1 25 50 75 100 125 150 175 0.1 TC = 25_C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance Limited by rDS(on) 0.1 0 1 Safe Operating Area 1000 50 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 72110 S-32523—Rev. C, 08-Dec-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1