NVD6495NL D

NVD6495NL
N-Channel Power MOSFET
100 V, 25 A, 50 mW, Logic
Level
Features
Low RDS(on)
100% Avalanche Tested
AEC−Q101 Qualified
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
Symbol
Value
Unit
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
25
A
Steady
State
Power Dissipation
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
18
D
G
PD
83
W
IDM
80
A
TJ, Tstg
−55 to
+175
°C
IS
25
A
EAS
79
mJ
3
°C
DPAK
CASE 369AA
STYLE 2
S
TL
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
25 A
50 mW @ 10 V
Drain−to−Source Voltage
Continuous Drain
Current
ID MAX
54 mW @ 4.5 V
100 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(on) MAX
Symbol
Max
Unit
Junction−to−Case (Drain) − Steady State
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
39
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
4
1 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
YWW
64
95NLG
•
•
•
•
1
Gate
6495NL
Y
WW
G
2
Drain
3
Source
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
NVD6495NL/D
NVD6495NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID = 250 mA, TJ = −40°C
100
92
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
115
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 100 V
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
100
"100
nA
2.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
VGS = 4.5 V, ID = 10 A
44
54
VGS = 10 V, ID = 10 A
43
50
gFS
VDS = 5.0 V, ID = 10 A
24
S
1024
pF
Forward Transconductance
4.8
mV/°C
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
70
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
nC
1.1
VGS = 4.5 V, VDS = 80 V, ID = 23 A
QGD
QG(TOT)
156
3.1
14
VGS = 10 V, VDS = 80 V, ID = 23 A
35
nC
11
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 4.5 V, VDD = 80 V,
ID = 23 A, RG = 6.1 W
tf
91
40
71
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 23 A
TJ = 25°C
0.87
TJ = 125°C
0.74
Reverse Recovery Time
tRR
64
Charge Time
Ta
40
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 23 A
QRR
1.2
V
ns
24
152
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NVD6495NLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
NVD6495NL
45
45
4V
5V
35
30
3.4 V
25
3.2 V
20
15
3.0 V
10
2.8 V
35
30
25
20
10
5
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
15
5
0
VDS w 10 V
40
3.6 V
ID, DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
TJ = 25°C
VGS = 10 V
5
TJ = 125°C
TJ = −55°C
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.050
0.050
ID = 23 A
TJ = 25°C
0.048
TJ = 25°C
0.048
0.046
0.046
0.044
VGS = 4.5 V
0.044
0.042
VGS = 10 V
0.042
0.040
2
3
4
5
6
7
8
9
10
0.040
5
15
20
25
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
3.0
2.5
10
Figure 3. On−Region versus Gate Voltage
10000
VGS = 0 V
ID = 23 A
VGS = 4.5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
4
2.0
1.5
TJ = 150°C
1000
TJ = 125°C
1.0
0.5
−50
100
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NVD6495NL
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
2500
TJ = 25°C
VGS = 0 V
2000
1500
Ciss
1000
500
Crss
Coss
0
0
10
20
30
40
50
60
70
80
90
QT
8
6
Qds
4
Qgs
VDS = 80 V
ID = 23 A
TJ = 25°C
2
0
100
0
5
10
15
20
25
30
35
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
25
IS, SOURCE CURRENT (A)
VDS = 80 V
ID = 23 A
VGS = 4.5 V
t, TIME (ns)
10
tr
100
tf
10
td(off)
td(on)
100
10
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
1
1
TJ = 25°C
VGS = 0 V
100
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
125
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
ID = 23 A
10 ms
10
100 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
75
50
25
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
NVD6495NL
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.1
1
10
NVD6495NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NVD6495NL/D