SUM110N04-2m7H Vishay Siliconix N-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0027 at VGS = 10 V 110a 250 TrenchFET® Power MOSFET 175 °C Junction Temperature Package with Low Thermal Resistance High Threshold Voltage at High Temperature • • • • RoHS COMPLIANT D TO-263 G G D S S Top View N-Channel MOSFET Ordering Information: SUM110N04-2m7H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID 110a IDM Avalanche Current (Single Pulse) IAS 75 EAS 281 Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range V 110a Pulsed Drain Current Avalanche Energy (Single Pulse) Unit 440 A mJ c PD 375 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) d PCB Mount RthJA 40 RthJC 0.4 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). Document Number: 72927 S-80273-Rev. C, 11-Feb-08 www.vishay.com 1 SUM110N04-2m7H Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 3.4 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea 4.5 rDS(on) gfs nA µA A 0.0022 0.0027 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.0042 VGS = 10 V, ID = 30 A, TJ = 175 °C 0.0052 VDS = 15 V, ID = 30 A V 30 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss c Gate-Source Charge c 250 VDS = 30 V, VGS = 10 V, ID = 110 A Ω 1.2 375 nC 95 Qgd 57 td(on) 50 75 150 225 c td(off) 70 105 25 40 Timec Turn-Off Delay Time f = 1.0 MHz c Gate-Drain Charge Turn-On Delay Time Qgs pF 1400 800 Qg c Rise VGS = 0 V, VDS = 25 V, f = 1 MHz Rg Gate Resistance Total Gate Charge 15720 tr Fall Timec VDD = 30 V, RL = 0.27 Ω ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω tf ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 110 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 85 A, VGS = 0 V 1.1 1.5 V 65 100 ns IF = 85 A, di/dt = 100 A/µs 2.8 4.2 A 0.091 0.21 µC trr IRM(REC) Qrr A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72927 S-80273-Rev. C, 11-Feb-08 SUM110N04-2m7H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 6V 150 100 150 100 TC = 125 °C 50 50 5V 4V 25 °C - 55 °C 0 0 0 2 4 6 8 0 10 2 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics r DS(on) - On-Resistance (Ω) 280 25 °C 210 7 0.005 TC = - 55 °C 125 °C 140 70 0 0.004 0.003 VGS = 10 V 0.002 0.001 0.000 0 20 40 60 80 100 0 20 40 ID - Drain Current (A) 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 20000 V GS - Gate-to-Source Voltage (V) Ciss 16000 C - Capacitance (pF) 3 VDS - Drain-to-Source Voltage (V) 350 g fs - Transconductance (S) 1 12000 8000 Coss 4000 Crss VDS = 30 V ID = 110 A 16 12 8 4 0 0 0 8 16 24 32 40 0 100 200 300 400 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72927 S-80273-Rev. C, 11-Feb-08 500 www.vishay.com 3 SUM110N04-2m7H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 30 A 1.6 I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.8 1.4 1.2 1.0 0.8 TJ = 150 °C TJ = 25 °C 10 0.6 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 52 1000 50 ID = 10 mA V (BR)DSS (V) I Dav (A) 100 IAV (A) at TA = 25 °C 10 48 46 44 IAV (A) at TA = 150 °C 1 42 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 72927 S-80273-Rev. C, 11-Feb-08 SUM110N04-2m7H Vishay Siliconix THERMAL RATINGS 1000 300 10 µs *Limited by rDS(on) 250 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 200 150 100 1 Package Limited 50 1 ms 10 0 10 ms DC, 100 ms TC = 25 °C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Areaa 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Notes: a. VGS ≥ minimum VGS at which rDS(on) is specified. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72927. Document Number: 72927 S-80273-Rev. C, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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