SUM110N04-05H Datasheet

SUM110N04-05H
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ.)
40
0.0053 at VGS = 10 V
110
95
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• High Threshold Voltage at High Temperature
RoHS
COMPLIANT
D
TO-263
G
G
D S
S
Top View
N-Channel MOSFET
Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
Operating Junction and Storage Temperature Range
V
110
70
300
IAR
50
EAR
125
PD
Unit
150b
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
1
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mountc
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
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SUM110N04-05H
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VDS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, ID = 250 µA
3.4
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
3.8
5.0
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
250
ID(on)
VDS = 5 V, VGS = 10 V
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
Forward Transconductancea
rDS(on)
gfs
µA
0.0053
0.008
VGS = 10 V, ID = 30 A, TJ = 175 °C
0.0106
20
nA
A
0.0044
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 15 V, ID = 15 A
V
50
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
c
td(on)
c
td(off)
Rise Timec
Turn-Off Delay Time
tr
Fall Timec
6700
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
600
320
95
VDS = 20 V, VGS = 10 V, ID = 50 A
37
f = 1.0 MHz
1.7
nC
21
VDD = 20 V, RL = 0.4 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω
tf
Ω
20
30
95
145
50
75
12
20
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
100
Pulsed Current
ISM
300
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
0.90
1.50
V
trr
IF = 30 A, di/dt = 100 A/µs
40
60
ns
Continuous Current
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73131
S-80274-Rev. B, 11-Feb-08
SUM110N04-05H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VGS = 10 thru 8 V
200
7V
I D - Drain Current (A)
I D - Drain Current (A)
200
150
100
6V
50
150
100
TC = 125 °C
50
25 °C
5V
- 55 °C
0
0
0
2
4
6
8
10
0
VDS - Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
160
0.010
TC = - 55 °C
25 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
140
120
125 °C
100
80
60
40
0.008
0.006
VGS = 10 V
0.004
0.002
20
0
0.000
0
10
20
30
40
50
60
0
20
40
I D - Drain Current (A)
80
100
I D - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
8400
20
VGS - Gate-to-Source Voltage (V)
Ciss
6300
C - Capacitance (pF)
60
4200
2100
Coss
VDS = 20 V
ID = 50 A
16
12
8
4
Crss
0
0
0
5
10
15
20
25
30
35
40
0
40
80
120
160
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
200
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SUM110N04-05H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
(Normalized)
rDS(on) - On-Resistance
1.7
1.4
1.1
TJ = 150 °C
10
TJ = 25 °C
0.8
1
- 25
0
25
50
75
100
125
150
175
0
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
54
100
51
IAV (A) at TJ = 25 °C
10
1
0.00001
0.0001
0.001
ID = 1 mA
48
45
IAV (A) at TJ = 150 °C
0.1
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0.3
On-Resistance vs. Junction Temperature
V(BR)DSS (V)
I Dav (A)
0.5
- 50
0.01
0.1
1
42
- 50
- 25
0
25
50
75
100
125
tin (s)
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
150
175
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
SUM110N04-05H
Vishay Siliconix
THERMAL RATINGS
1000
125
10 µs
100
I D - Drain Current (A)
I D - Drain Current (A)
100
75
50
25
100 µs
10
Limited
by rDS(on)*
0
25
50
75
100
125
150
0.1
TC = 25 °C
Single Pulse
0.001
0.1
175
TA - Ambient Temperature (°C)
1
* VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
10 ms, 100 ms, DC
1
0.01
0
1 ms
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73131.
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
www.vishay.com
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Document Number: 91000
Revision: 18-Jul-08
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