SUM110N04-02L Datasheet

SUM110N04-02L
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (Ω)
0.0023 at VGS = 10 V
0.0038 at VGS = 4.5 V
ID (A)
110
• TrenchFET® Power MOSFET
• New Package with Low Thermal Resistance
Available
RoHS*
a
COMPLIANT
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N04-02L
SUM110N04-02L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
IDM
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
ID
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
V
110a
110a
A
440
IAR
75
EAR
280
PD
Unit
437.5
mJ
c
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mountd
Junction-to-Case (Drain)
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
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1
SUM110N04-02L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VDS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
Drain-Source On-State Resistancea
3
rDS(on)
120
0.00185
0.0023
VGS = 4.5 V, ID = 20 A
0.0031
0.0038
VGS = 10 V, ID = 30 A, TJ = 125 °C
Forward Transconductance
gfs
VDS = 15 V, ID = 30 A
nA
µA
A
VGS = 10 V, ID = 30 A
0.0037
VGS = 10 V, ID = 30 A, TJ = 175 °C
a
V
Ω
0.0046
30
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
7300
VGS = 0 V, VDS = 25 V, f = 1 MHz
930
165
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
55
Turn-On Delay Timec
td(on)
30
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
pF
1380
VDS = 30 V, VGS = 10 V, ID = 110 A
VDD = 30 V, RL = 0.27 Ω
ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °C
250
nC
25
45
80
120
155
230
120
180
b
IS
110
Pulsed Current
ISM
240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
IF = 85 A, di/dt = 100 A/µs
A
1.1
1.5
V
60
90
ns
2.6
4
A
0.08
0.15
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70763
S-80108-Rev. D, 21-Jan-08
SUM110N04-02L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VGS = 10 thru 5 V
200
I D – Drain Current (A)
I D – Drain Current (A)
200
150
4V
100
50
150
100
TC = 125 °C
50
25 °C
- 55 °C
3V
0
0
0
2
4
6
8
10
0
1
VDS – Drain-to-Source Voltage (V)
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
0.004
TC = - 55 °C
VGS = 4.5 V
r DS(on) – On-Resistance (Ω)
g fs – Transconductance (S)
250
25 °C
200
125 °C
150
100
50
0
VGS = 10 V
0.002
0.001
0.000
0
20
40
60
80
100
120
0
20
40
60
80
100
ID – Drain Current (A)
ID – Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
12000
120
20
V GS – Gate-to-Source Voltage (V)
10000
C – Capacitance (pF)
0.003
Ciss
8000
6000
4000
Coss
2000
VDS = 30 V
ID = 110 A
16
12
8
4
Crss
0
0
0
8
16
24
32
VDS – Drain-to-Source Voltage (V)
Capacitance
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
40
0
60
120
180
240
300
Qg – Total Gate Charge (nC)
Gate Charge
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SUM110N04-02L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
I S – Source Current (A)
1.6
(Normalized)
r DS(on) – On-Resistance
V GS = 10 V
ID = 30 A
1.2
0.8
TJ = 150 °C
TJ = 25 °C
10
0.4
0.0
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
T J – Junction Temperature (°C)
60
55
IAV (A) at TA = 25 °C
V(BR)DSS (V)
I Dav (a)
100
IAV (A) at T A = 150 °C
1
ID = 10 mA
50
45
0.1
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1.2
Source-Drain Diode Forward Voltage
1000
0.00001
0.9
V SD – Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
10
0.6
0.0001
0.001
0.01
0.1
1
40
- 50
- 25
0
25
50
75
100
125
tin (s)
T J – Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
150
175
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
SUM110N04-02L
Vishay Siliconix
THERMAL RATINGS
1000
120
100
10 µs
100 µs
I D – Drain Current (A)
I D – Drain Current (A)
100
80
60
40
Limited
by rDS(on)*
1 ms
10 ms
100 ms
DC
10
1
TC = 25 °C
Single Pulse
20
0.1
0
0
25
50
75
100
125
150
175
0.1
1
TC – Ambient Temperature (°C)
* VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
10
100
VDS – Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70763.
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000