SUM110N04-02L Vishay Siliconix N-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) 0.0023 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A) 110 • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance Available RoHS* a COMPLIANT D TO-263 G G D S Top View S Ordering Information: SUM110N04-02L SUM110N04-02L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C IDM Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb ID L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range V 110a 110a A 440 IAR 75 EAR 280 PD Unit 437.5 mJ c 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountd Junction-to-Case (Drain) °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70763 S-80108-Rev. D, 21-Jan-08 www.vishay.com 1 SUM110N04-02L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea 3 rDS(on) 120 0.00185 0.0023 VGS = 4.5 V, ID = 20 A 0.0031 0.0038 VGS = 10 V, ID = 30 A, TJ = 125 °C Forward Transconductance gfs VDS = 15 V, ID = 30 A nA µA A VGS = 10 V, ID = 30 A 0.0037 VGS = 10 V, ID = 30 A, TJ = 175 °C a V Ω 0.0046 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 7300 VGS = 0 V, VDS = 25 V, f = 1 MHz 930 165 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 55 Turn-On Delay Timec td(on) 30 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) pF 1380 VDS = 30 V, VGS = 10 V, ID = 110 A VDD = 30 V, RL = 0.27 Ω ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C 250 nC 25 45 80 120 155 230 120 180 b IS 110 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr ns IF = 85 A, di/dt = 100 A/µs A 1.1 1.5 V 60 90 ns 2.6 4 A 0.08 0.15 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70763 S-80108-Rev. D, 21-Jan-08 SUM110N04-02L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 5 V 200 I D – Drain Current (A) I D – Drain Current (A) 200 150 4V 100 50 150 100 TC = 125 °C 50 25 °C - 55 °C 3V 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 0.004 TC = - 55 °C VGS = 4.5 V r DS(on) – On-Resistance (Ω) g fs – Transconductance (S) 250 25 °C 200 125 °C 150 100 50 0 VGS = 10 V 0.002 0.001 0.000 0 20 40 60 80 100 120 0 20 40 60 80 100 ID – Drain Current (A) ID – Drain Current (A) Transconductance On-Resistance vs. Drain Current 12000 120 20 V GS – Gate-to-Source Voltage (V) 10000 C – Capacitance (pF) 0.003 Ciss 8000 6000 4000 Coss 2000 VDS = 30 V ID = 110 A 16 12 8 4 Crss 0 0 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Capacitance Document Number: 70763 S-80108-Rev. D, 21-Jan-08 40 0 60 120 180 240 300 Qg – Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM110N04-02L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 I S – Source Current (A) 1.6 (Normalized) r DS(on) – On-Resistance V GS = 10 V ID = 30 A 1.2 0.8 TJ = 150 °C TJ = 25 °C 10 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 T J – Junction Temperature (°C) 60 55 IAV (A) at TA = 25 °C V(BR)DSS (V) I Dav (a) 100 IAV (A) at T A = 150 °C 1 ID = 10 mA 50 45 0.1 www.vishay.com 4 1.2 Source-Drain Diode Forward Voltage 1000 0.00001 0.9 V SD – Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 10 0.6 0.0001 0.001 0.01 0.1 1 40 - 50 - 25 0 25 50 75 100 125 tin (s) T J – Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 70763 S-80108-Rev. D, 21-Jan-08 SUM110N04-02L Vishay Siliconix THERMAL RATINGS 1000 120 100 10 µs 100 µs I D – Drain Current (A) I D – Drain Current (A) 100 80 60 40 Limited by rDS(on)* 1 ms 10 ms 100 ms DC 10 1 TC = 25 °C Single Pulse 20 0.1 0 0 25 50 75 100 125 150 175 0.1 1 TC – Ambient Temperature (°C) * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70763. Document Number: 70763 S-80108-Rev. D, 21-Jan-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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