SUM110N04-03 Datasheet

SUM110N04-03
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
40
0.0028 at VGS = 10 V
110a
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
Available
RoHS*
COMPLIANT
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N04-03
SUM110N04-03-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
IDM
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
ID
b
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
V
110a
110a
A
440
IAR
70
EAR
211
PD
Unit
437.5
mJ
c
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mountd
Junction-to-Case (Drain)
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* PB containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71745
S-80108-Rev. E, 21-Jan-08
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SUM110N04-03
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VDS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
4
gfs
VDS = 15 V, ID = 30 A
µA
0.0028
0.0045
VGS = 10 V, ID = 30 A, TJ = 175 °C
Forward Transconductancea
nA
A
0.0023
VGS = 10 V, ID = 30 A, TJ = 125 °C
rDS(on)
V
Ω
0.0056
30
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Turn-On Delay Timec
td(on)
c
tr
Turn-Off Delay Timec
td(off)
Rise Time
Fall Timec
8250
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
1380
850
165
VDS = 30 V, VGS = 10 V, ID = 110 A
250
nC
45
65
VDD = 30 V, RL = 0.27 Ω
ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω
tf
25
40
170
255
55
85
110
165
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
110
Pulsed Current
ISM
240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 85 A, di/dt = 100 A/µs
A
1.1
1.5
V
60
90
ns
3.0
5
A
0.09
0.22
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71745
S-80108-Rev. E, 21-Jan-08
SUM110N04-03
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VGS = 10 thru 7 V
200
6V
I D - Drain Current (A)
I D - Drain Current (A)
200
150
100
50
150
100
TC = 125 °C
50
5V
25 °C
- 55 °C
4V
0
0
0
2
4
6
8
0
10
1
2
Output Characteristics
5
6
7
Transfer Characteristics
0.006
300
TC = - 55 °C
0.005
r DS(on) - On-Resistance (Ω)
250
g fs - Transconductance (S)
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
25 °C
200
125 °C
150
100
0.004
0.003
VGS = 10 V
0.002
0.001
50
0.000
0
0
20
40
60
80
100
0
120
20
40
60
80
100
120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
12000
20
VGS - Gate-to-Source Voltage (V)
10000
Ciss
C - Capacitance (pF)
3
8000
6000
4000
Coss
2000
VDS = 30 V
ID = 85 A
16
12
8
4
Crss
0
0
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
Capacitance
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3
40
0
50
100
150
200
250
300
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71745
S-80108-Rev. E, 21-Jan-08
SUM110N04-03
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.1
100
V GS = 10 V
ID = 30 A
I S - Source Current (A)
1.5
(Normalized)
r DS(on) – On-Resistance
1.8
1.2
0.9
0.6
TJ = 150 °C
TJ = 25 °C
10
0.3
0.0
- 50 - 25
1
0
25
50
75
100
125
150 175
0.3
0
T J - Junction Temperature (°C)
0.9
1.2
V SD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
56
100
52
IAV (A) at T A = 25 °C
V(BR)DSS (V)
I Dav (A)
0.6
10
ID = 10 mA
48
IAV (A) at T A = 150 °C
44
1
0.1
0.00001
0.0001
0.001
0.01
tin (s)
Avalanche Current vs. Time
Document Number: 71745
S-80108-Rev. E, 21-Jan-08
0.1
1
40
- 50
- 25
0
25
50
75
100
125
150
175
T J - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
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SUM110N04-03
Vishay Siliconix
THERMAL RATINGS
1000
120
10 µs
100
100 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
Limited
by rDS(on)*
1
TC = 25 °C
Single Pulse
20
0.1
0.1
0
0
25
50
75
100
125
150
175
TC - Ambient Temperature (°C)
1 ms
10 ms
100 ms
DC
10
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
Maximum Avalanche and Drain Current
vs. Case Temperature
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71745.
Document Number: 71745
S-80108-Rev. E, 21-Jan-08
www.vishay.com
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Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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