SUM110N04-03 Vishay Siliconix N-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0028 at VGS = 10 V 110a • TrenchFET® Power MOSFET • Package with Low Thermal Resistance Available RoHS* COMPLIANT D TO-263 G G D S Top View S Ordering Information: SUM110N04-03 SUM110N04-03-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C IDM Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy ID b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range V 110a 110a A 440 IAR 70 EAR 211 PD Unit 437.5 mJ c 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountd Junction-to-Case (Drain) °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * PB containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71745 S-80108-Rev. E, 21-Jan-08 www.vishay.com 1 SUM110N04-03 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A µA 0.0028 0.0045 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea nA A 0.0023 VGS = 10 V, ID = 30 A, TJ = 125 °C rDS(on) V Ω 0.0056 30 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 8250 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 1380 850 165 VDS = 30 V, VGS = 10 V, ID = 110 A 250 nC 45 65 VDD = 30 V, RL = 0.27 Ω ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω tf 25 40 170 255 55 85 110 165 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 110 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr IF = 85 A, di/dt = 100 A/µs A 1.1 1.5 V 60 90 ns 3.0 5 A 0.09 0.22 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71745 S-80108-Rev. E, 21-Jan-08 SUM110N04-03 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 7 V 200 6V I D - Drain Current (A) I D - Drain Current (A) 200 150 100 50 150 100 TC = 125 °C 50 5V 25 °C - 55 °C 4V 0 0 0 2 4 6 8 0 10 1 2 Output Characteristics 5 6 7 Transfer Characteristics 0.006 300 TC = - 55 °C 0.005 r DS(on) - On-Resistance (Ω) 250 g fs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 25 °C 200 125 °C 150 100 0.004 0.003 VGS = 10 V 0.002 0.001 50 0.000 0 0 20 40 60 80 100 0 120 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 12000 20 VGS - Gate-to-Source Voltage (V) 10000 Ciss C - Capacitance (pF) 3 8000 6000 4000 Coss 2000 VDS = 30 V ID = 85 A 16 12 8 4 Crss 0 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 40 0 50 100 150 200 250 300 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71745 S-80108-Rev. E, 21-Jan-08 SUM110N04-03 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1 100 V GS = 10 V ID = 30 A I S - Source Current (A) 1.5 (Normalized) r DS(on) – On-Resistance 1.8 1.2 0.9 0.6 TJ = 150 °C TJ = 25 °C 10 0.3 0.0 - 50 - 25 1 0 25 50 75 100 125 150 175 0.3 0 T J - Junction Temperature (°C) 0.9 1.2 V SD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 56 100 52 IAV (A) at T A = 25 °C V(BR)DSS (V) I Dav (A) 0.6 10 ID = 10 mA 48 IAV (A) at T A = 150 °C 44 1 0.1 0.00001 0.0001 0.001 0.01 tin (s) Avalanche Current vs. Time Document Number: 71745 S-80108-Rev. E, 21-Jan-08 0.1 1 40 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 SUM110N04-03 Vishay Siliconix THERMAL RATINGS 1000 120 10 µs 100 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 Limited by rDS(on)* 1 TC = 25 °C Single Pulse 20 0.1 0.1 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) 1 ms 10 ms 100 ms DC 10 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area Maximum Avalanche and Drain Current vs. Case Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71745. Document Number: 71745 S-80108-Rev. E, 21-Jan-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1