SUM110N06-3m9H Datasheet

SUM110N06-3m9H
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
60
0.0039 at VGS = 10 V
110a
200
•
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
Low Thermal Resistance Package
High Threshold Voltage At High Temperature
100 % Rg Tested
RoHS
COMPLIANT
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
110a
IDM
Pulsed Drain Current
Single Pulse Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
TC = 25 °C
Maximum Power Dissipationb
440
IAS
70
EAS
245
375c
PD
TA = 25 °Cd
TJ, Tstg
Operating Junction and Storage Temperature Range
V
110a
ID
TC = 125 °C
Unit
3.75
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
d
PCB Mount
Junction-to-Case (Drain)
Symbol
Limit
RthJA
40
RthJC
0.4
Unit
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
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SUM110N06-3m9H
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
3.4
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
VDS = 60 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
4.5
gfs
VDS = 15 V, ID = 30 A
µA
0.0039
0.0063
VGS = 10 V, ID = 30 A, TJ = 175 °C
Forward Transconductancea
nA
A
0.00325
VGS = 10 V, ID = 30 A, TJ = 125 °C
rDS(on)
V
Ω
0.0082
30
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
15 800
VGS = 0 V, VDS = 25 V, f = 1 MHz
600
f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 110 A
0.6
1.2
1.8
200
300
Qgd
45
Turn-On Delay Timec
td(on)
45
Rise
Turn-Off Delay Timec
Fall Timec
tr
td(off)
VDD = 30 V, RL = 0.27 Ω
ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics (TC = 25
70
160
240
75
115
14
25
IS
110
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
°C)b
Pulsed Current
Continuous Current
Ω
nC
80
Gate-Drain Charge
Timec
pF
1050
IF = 85 A, di/dt = 100 A/µs
A
1.1
1.5
V
65
100
ns
4.4
6.6
A
143
330
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73236
S-70534-Rev. C, 26-Mar-07
SUM110N06-3m9H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VGS = 10 thru 7 V
200
I D - Drain Current (A)
I D - Drain Current (A)
200
6V
150
100
50
150
100
TC = 125 °C
50
25 °C
5V
- 55 °C
0
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
0.006
250
25 °C
200
125 °C
0.005
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
150
100
50
0.004
VGS = 10 V
0.003
0.002
0.001
0
0.000
0
15
30
45
60
75
90
0
20
40
ID - Drain Current (A)
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
21000
20
VGS - Gate-to-Source Voltage (V)
18000
Ciss
C - Capacitance (pF)
60
15000
12000
9000
6000
Coss
Crss
3000
0
VDS = 30 V
ID = 110 A
16
12
8
4
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
50
60
0
50
100
150
200
250
300
350
400
Qg - Total Gate Charge (nC)
Gate Charge
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SUM110N06-3m9H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
rDS(on) - On-Resistance
(Normalized)
1.7
1.4
1.1
TJ = 150 °C
TJ = 25 °C
10
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
TJ - Junction Temperature (°C)
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
74
72
ID = 10 mA
70
IAV (A) at TA = 25 °C
V(BR)DSS (V)
I Dav (a)
100
10
IAV (A) at TA = 150 °C
68
66
64
1
62
0.1
0.00001
0.0001
0.001
0.01
0.1
tin (Sec)
Avalanche Current vs. Time
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1
60
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
SUM110N06-3m9H
Vishay Siliconix
THERMAL RATINGS
1000
300
10 µs
*Limited by rDS(on)
250
I D - Drain Current (A)
ID - Drain Current (A)
100
200
150
100
0
0
25
50
75
10
1 ms
10 ms
dc, 100 ms
1
Limited By Package
50
100 µs
100
125
150
TC = 25 °C
Single Pulse
0.1
0.1
175
TC - Case Temperature (°C)
1
*VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73236.
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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