SUM85N15-19 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.019 @ VGS = 10 V 85 a TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package 100% Rg Tested APPLICATIONS D Primary Side Switch D Automotive − 42-V EPS and ABS − DC/DC Conversion − Motor Drives D TO-263 G G D S Top View S Ordering Information: SUM85N15-19 SUM85N15-19-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_Cd Operating Junction and Storage Temperature Range V 85a 50a 180 IAR 50 EAR 125 PD Unit 375c 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)d RthJA 40 RthJC 0.4 _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71703 S-32523—Rev. B, 08-Dec-03 www.vishay.com 1 SUM85N15-19 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 150 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS VDS = 150 V, VGS = 0 V, TJ = 125_C 50 VDS = 150 V, VGS = 0 V, TJ = 175_C 250 ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A nA mA m A 0.015 0.019 0.038 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea V W 0.050 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 4750 530 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 220 76 110 21 VDS = 75 V,, VGS = 10 V,, ID = 85 A Qgd nC 26 Rg 0.5 1.8 3.0 td(on) 22 35 tr 170 250 40 60 170 250 td(off) VDD = 75 V, RL = 0.9 W ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W tf W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 85 Pulsed Current ISM 180 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms A 1.0 1.5 V 130 200 ns 8 12 A 0.52 1.2 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71703 S-32523—Rev. B, 08-Dec-03 SUM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 180 180 VGS = 10 thru 7 V 150 6V I D − Drain Current (A) I D − Drain Current (A) 150 120 90 60 5V 30 120 90 60 TC = 125_C 30 25_C −55_C 4V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 180 0.04 TC = −55_C r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) 150 25_C 120 125_C 90 60 30 0 0.03 0.02 VGS = 10 V 0.01 0.00 0 20 40 60 80 100 0 120 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 4000 3000 2000 Crss 1000 100 120 125 150 Gate Charge 20 6000 5000 80 ID − Drain Current (A) Capacitance 7000 60 Coss 0 VDS = 75 V ID = 85 A 16 12 8 4 0 0 25 50 75 100 125 VDS − Drain-to-Source Voltage (V) Document Number: 71703 S-32523—Rev. B, 08-Dec-03 150 0 25 50 75 100 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.8 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 30 A 2.0 I S − Source Current (A) r DS(on) − On-Resistance (W) (Normalized) 2.4 On-Resistance vs. Junction Temperature 1.6 1.2 0.8 TJ = 150_C 10 TJ = 25_C 0.4 0.0 −50 −25 0 25 50 75 100 125 150 1 0 175 0.3 TJ − Junction Temperature (_C) 1000 1.2 Drain Source Breakdown vs. Junction Temperature 190 180 V(BR)DSS (V) 100 I Dav (a) 0.9 VSD − Source-to-Drain Voltage (V) Avalanche Current vs. Time IAV (A) @ TA = 25_C 10 0.6 ID = 1.0 mA 170 160 1 150 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 140 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 71703 S-32523—Rev. B, 08-Dec-03 SUM85N15-19 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 90 Limited by rDS(on) 75 10 ms I D − Drain Current (A) I D − Drain Current (A) 100 60 45 30 100 ms 10 1 15 0 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance 1 ms Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 71703 S-32523—Rev. B, 08-Dec-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1