ETC SUM110N06-05L

SUM110N06-05L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D New Low Thermal Resistance Package
ID (A)
0.0052 @ VGS = 10 V
110 a
0.0072 @ VGS = 4.5 V
APPLICATIONS
D Automotive and Industrial
D
TO-263
G
G
D S
Top View
S
SUM110N06-05L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
_
TC = 25_C
TC = 125_C
Pulsed Drain Current
ID
IDM
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
TC = 25_C
Maximum Power Dissipationb
TA = 25_C d
Operating Junction and Storage Temperature Range
Unit
V
110a
82a
A
300
IAR
75
EAR
280
mJ
230c
PD
3.75
W
TJ, Tstg
-55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mountd
RthJA
40
Junction-to-Case
RthJC
0.65
_
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72006
S-21712—Rev. A, 07-Oct-02
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SUM110N06-05L
New Product
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 48 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
IDSS
ID(on)
rDS(on)
V
3
VDS = 48 V, VGS = 0 V, TJ = 125_C
50
VDS = 48 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
120
VGS = 10 V, ID = 30 A
0.0044
0.0052
VGS = 4.5 V, ID = 20 A
0.0059
0.0072
VDS = 15 V, ID = 30 A
W
0.0085
VGS = 10 V, ID = 30 A, TJ = 175_C
gfs
mA
m
A
VGS = 10 V, ID = 30 A, TJ = 125_C
Forward Transconductancea
nA
0.011
30
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
365
Total Gate Chargec
Qg
80
Gate-Source Chargec
Qgs
19
Gate-Drain Chargec
Qgd
20
Turn-On Delay Timec
td(on)
15
25
tr
20
30
45
70
15
25
Rise Timec
Turn-Off Delay
Timec
Fall Timec
td(off)
4300
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 110 A
VDD = 30 V, RL = 0.27 W
ID ^ 110 A, VGEN = 10 V, RG = 2.5 W
tf
770
pF
120
nC
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
110
Pulsed Current
ISM
300
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 110 A, VGS = 0 V
1.1
1.5
V
75
125
ns
IF = 110 A, di/dt = 100 A/ms
2.5
5
A
0.095
0.31
mC
trr
IRM(REC)
Qrr
A
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 72006
S-21712—Rev. A, 07-Oct-02
SUM110N06-05L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
VGS = 10 thru 5 V
200
I D - Drain Current (A)
I D - Drain Current (A)
200
150
4V
100
50
150
100
TC = 125_C
50
25_C
-55 _C
3V
0
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
200
0.010
g fs - Transconductance (S)
160
r DS(on) - On-Resistance ( W )
TC = -55_C
25_C
120
125_C
80
40
0
0.008
VGS = 4.5 V
0.006
VGS = 10 V
0.004
0.002
0.000
0
15
30
45
60
75
90
0
20
40
ID - Drain Current (A)
80
100
120
ID - Drain Current (A)
Capacitance
Gate Charge
6000
20
V GS - Gate-to-Source Voltage (V)
5000
Ciss
C - Capacitance (pF)
60
4000
3000
2000
Coss
1000
Crss
0
0
VGS = 30 V
ID = 110 A
16
12
8
4
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Document Number: 72006
S-21712—Rev. A, 07-Oct-02
60
0
20
40
60
80
100
120
140
160
Qg - Total Gate Charge (nC)
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SUM110N06-05L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
I S - Source Current (A)
r DS(on) - On-Resistance (W)
(Normalized)
VGS = 10 V
ID = 110 A
1.5
1.0
TJ = 150_C
TJ = 25_C
10
0.5
0.0
-50
-25
0
25
50
75
100
125
150
1
0.2
175
0.4
TJ - Junction Temperature (_C)
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Avalanche Current vs. Time
On-Resistance vs. Junction Temperature
80
1000
r DS(on) - On-Resistance (W)
(Normalized)
ID = 10 m A
I Dav (a)
100
10
IAV (A) @ TJ = 25_C
1
IAV (A) @ TJ = 150_C
0.1
0.00001
0.0001
0.001
0.01
tin (Sec)
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0.1
1
75
70
65
60
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
Document Number: 72006
S-21712—Rev. A, 07-Oct-02
SUM110N06-05L
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
120
10 ms
Limited
by rDS(on)
100
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
10
1 ms
10 ms
100 ms
dc
1
20
0
100 ms
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
TC - Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72006
S-21712—Rev. A, 07-Oct-02
www.vishay.com
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