Si2327DS Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A) 2.35 at VGS = - 10 V - 0.49 2.45 at VGS = - 6.0 V - 0.48 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size Qg (Typ.) 8.0 APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 S 2 3 D Top View Si2327DS (D7)* * Marking Code Ordering Information: Si2327DS -T1-E3 (Lead (Pb)-free) Si2327DS -T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 200 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TA = 70 °C ID a, b IS Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa, b L = 1.0 mH TA = 25 °C TA = 70 °C - 0.38 - 0.39 - 0.31 - 1.0 - 0.6 IAS 4.0 0.8 mJ 1.25 0.75 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range A - 1.0 EAS PD V - 0.49 IDM Pulsed Drain Current Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73240 S09-0133-Rev. B, 02-Feb-09 www.vishay.com 1 Si2327DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 200 VGS(th) VDS = VGS, ID = - 250 µA - 2.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 200 V, VGS = 0 V -1 VDS = - 200 V, VGS = 0 V, TJ = 55 °C - 10 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage VDS ≤ - 15 V, VGS = 10 V - 4.5 - 1.0 nA µA A VGS = - 10 V, ID = - 0.5 A 1.9 2.35 VGS = - 6.0 V, ID = - 0.5 A 1.96 2.45 gfs VDS = - 15 V, ID = - 0.5 A 1.8 VSD IS = - 1.0 A, VGS = 0 V - 0.85 - 1.2 8.0 12 RDS(on) V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 100 V, VGS = 10 V ID ≅ - 0.5 A f = 1.0 MHz 2.5 Ω 8.0 340 VDS = - 25 V, VGS = 0 V, f = 1 MHz nC 1.3 510 pF 25 14 Switchingc Turn-On Time Turn-Off Time Body Diode Reverse Recovery Charge td(on) tr td(off) tf Qrr VDD = - 100 V, RL = 100 Ω ID ≅ - 1.0 A, VGEN = - 10 V Rg = 6 Ω IF = 0.5 A, dI/dt = 100 A/µs 8 12 11 17 16 25 11 17 140 200 ns nC Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73240 S09-0133-Rev. B, 02-Feb-09 Si2327DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1.0 VGS = 10 thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 0.4 0.6 0.4 TC = 125 °C 4V 0.2 0.2 25 °C 0.0 - 55 °C 0.0 0 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.2 5 500 400 2.4 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.8 VGS = 6 V 2.0 VGS = 10 V 1.6 1.2 Ciss 300 200 0.8 100 Crss 0.4 Coss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 60 90 120 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 150 2.2 VDS = 10 V ID = 0.5 A 1.9 8 6 4 2 VGS = 10 V ID = 0.5 A 1.6 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 30 1.3 1.0 0.7 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73240 S09-0133-Rev. B, 02-Feb-09 7 8 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2327DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 3 ID = 0.5 A TJ = 150 °C 5 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 1 TJ = 25 °C 0.1 4 3 2 1 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 12 ID = 250 µA 10 0.7 8 0.4 Power (W) VGS(th) Variance (V) 4 0.1 6 4 TA = 25 °C - 0.2 - 0.5 - 50 2 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 10 IDM Limited I D - Drain Current (A) 1 10 µs 100 µs Limited by RDS(on)* 1 ms 0.1 10 ms 100 ms 0.01 TA = 25 °C Single Pulse 10 s, 1 s DC, 100 s BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73240 S09-0133-Rev. B, 02-Feb-09 Si2327DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73240. Document Number: 73240 S09-0133-Rev. 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