2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage APPLICATIONS 3 G Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage • Hi-Rel Systems • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays D Top View ORDERING INFORMATION PART PACKAGE 2N6659 TO-205AD (TO-39) 2N6659-2 DESCRIPTION/DSCC PART NUMBER VISHAY ORDERING PART NUMBER Commercial 2N6659 Commercial, Lead (Pb)-free 2N6659-E3 See -2 Flow Document 2N6659-2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 35 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) Pulsed Drain TC = 25 °C TC = 100 °C Currenta Maximum Power Dissipation ID IDM TC = 25 °C TC = 100 °C PD V 1.4 1 A 3 6.25 2.5 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg - 55 to 150 Operating Junction and Storage Temperature Range UNIT W °C/W °C Notes a. Pulse width limited by maximum junction temperature. b. Not required by military spec. S12-0591-Rev. A, 19-Mar-12 Document Number: 63868 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.a MAX. UNIT VDS VDS = 0 V, ID = 10 μA 35 75 - V VGS(th) VDS = VGS, ID = 1 mA 0.8 1.7 2 - - ± 100 - - ± 500 Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS = 0 V Gate-Body Leakage IGSS VGS = ± 15 V Zero Gate Voltage Drain Current IDSS VGS = 0 V On-State Drain Current ID(on) VGS = 10 V VDS = 10 V 1.5 3 - VGS = 5 V ID = 0.3 A - 2 5 ID = 1 A - 1.3 1.8 Drain-Source On-State Resistanceb RDS(on) TC = 125 °C VDS = 35 V VDS = 28 V VGS = 10 V TC = 125 °C TC = 125 °C - - 10 - - 500 nA μA A - 2.4 3.6 Forward Transconductanceb gfs VDS = 7.5 V, ID = 0.525 A 170 350 - mS Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V - 0.8 - V - 35 50 - 25 40 - 7 10 - 30 40 - 8 10 - 8.5 10 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain-Source Capacitance Cds VGS = 0 V VDS = 25 V, f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 ID 1 A, VGEN = 10 V, Rg = 25 ns Notes a. FOR DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 μs duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-0591-Rev. A, 19-Mar-12 Document Number: 63868 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 2.0 VGS = 10 V 2.8 V 1.6 80 7V I D - Drain Current (mA) I D - Drain Current (A) VGS = 10 V 8V 6V 1.2 5V 0.8 4V 2.6 V 60 2.4 V 40 2.2 V 20 0.4 3V 2V 0 0 1 2 3 4 1.8 V 2.0 V 0 0 5 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 1.0 2.8 TJ = - 55 °C 25 °C 2.4 VDS = 15 V R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 0.8 125 °C 0.6 0.4 0.2 1.0 A 0.5 A 2.0 1.6 1.2 0.8 ID = 0.1 A 0.4 0 0 0 2 4 6 8 0 10 4 VGS - Gate-Source Voltage (V) R DS(on) - Drain-Source On-Resistance (Ω) 2.5 2.0 VGS = 10 V 1.5 1.0 0.5 0 0 0.4 0.8 1.2 20 On-Resistance vs. Gate-to-Source Voltage R DS(on) - Drain-Source On-Resistance (Normalized) Transfer Characteristics 8 12 16 VGS - Gate-Source Voltage (V) 1.6 2.0 2.25 VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 - 50 - 10 30 70 110 150 I D - Drain Current (A) TJ - Junction Temperature (°C) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature S12-0591-Rev. A, 19-Mar-12 Document Number: 63868 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 120 VGS = 0 V VDS = 5 V f = 1 MHz 100 C - Capacitance (pF) I D - Drain Current (mA) TJ = 150 °C 1 25 °C 0.1 80 60 40 C iss C oss 20 C rss - 55 °C 125 °C 0 0.01 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Threshold Region Capacitance 100 15.0 I D = 1.0 A 50 12.5 VDS = 30 V 10.0 t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) 50 48 V 7.5 5.0 2.5 V DD = 25 V Rg = 25 Ω V GS = 0 V to 10 V 20 10 td(off) 5 tr td(on) tf 2 0 0 100 200 300 400 500 Q g - Total Gate Charge (pC) 600 1 0.1 Gate Charge 1 I D - Drain Current (A) 10 Load Condition Effects on Switching 1.0 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 Single Pulse 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJC = 20 °C/W 0.01 3. TJM - TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 t1 - Square Wave Pulse Duration (s) 1K 10 K Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70223. S12-0591-Rev. A, 19-Mar-12 Document Number: 63868 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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