Si2325DS New Product Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ) 77 7.7 APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 S D 2 Ordering Information: Si2325DS -T1—E3 Top View Si2325DS (D5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS −150 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a, b IS Single-Pluse Avalanche Current IAS Single-Pulse Avalanche Energy Maximum Power Dissipationa, b L = 1.0 1 0 mH TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range −0.53 −0.55 −0.43 −1.6 −1.0 A −0.6 4.5 EAS PD V −0.69 IDM Unit 1.01 mJ 1.25 0.75 0.8 0.48 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t 5 sec Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 73238 S-42449—Rev. A, 10-Jan-05 www.vishay.com 1 Si2325DS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = −250 mA −150 VGS(th) VDS = VGS, ID = −250 mA −2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage −4.5 100 VDS = −150 V, VGS = 0 V −1 VDS = −150 V, VGS = 0 V, TJ = 55_C −10 VDS −15 V, VGS = 10 V −1.6 nA mA A VGS = −10 V, ID = −0.5 A 1.0 1.2 VGS = −6.0 V, ID = −0.5 A 1.05 1.3 gfs VDS = −15 V, ID = −0.5 A 2.2 VSD IS = −1.0 A, VGS = 0 V 0.7 −1.2 7.7 12 rDS(on) DS( ) V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = −75 75 V, V VGS = 10 V ID −0.5 A f = 1.0 MHz 1.5 2.5 9 340 VDS = −25 V, VGS = 0, f = 1 MHz nC W 510 30 pF p 16 Switchingc Turn-On Time Turn Off Time Turn-Off Body Diode Reverse Recovery Charge td(on) tr td(off) VDD = −75 V, RL = 75 W ID −1.0 −1 0 A A, VGEN = −10 V Rg = 6 W tf Qrr IF = 0.5 A, di/dt = 100 A/ms 7 11 11 17 16 25 11 17 90 135 ns nC Notes a. Pulse test: PW 300 ms duty cycle 2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73238 S-42449—Rev. A, 10-Jan-05 Si2325DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.6 1.6 VGS = 10 thru 5 V 1.4 1.4 1.2 I D − Drain Current (A) I D − Drain Current (A) 1.2 1.0 0.8 0.6 0.4 4V 0.2 0.0 2 4 0.8 0.6 TC = 125_C 0.4 25_C 0.2 3V 0 1.0 6 8 −55_C 0.0 10 0 1 VDS − Drain-to-Source Voltage (V) 3 4 5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.00 2 Capacitance 500 400 1.50 1.25 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1.75 VGS = 6 V 1.00 VGS = 10 V 0.75 0.50 Ciss 300 200 100 Coss 0.25 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 30 ID − Drain Current (A) 60 90 120 150 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.5 VDS = 75 V ID = 0.5 A 8 2.0 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) Crss 0 6 4 2 VGS = 10 V ID = 0.5 A 1.5 1.0 0.5 0 0 1 2 3 4 5 6 Qg − Total Gate Charge (nC) Document Number: 73238 S-42449—Rev. A, 10-Jan-05 7 8 0.0 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si2325DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 3 ID = 0.5 A r DS(on) − On-Resistance ( W ) I S − Source Current (A) 2.5 TJ = 150_C 1 TJ = 25_C 1.5 1.0 0.5 0.0 0.1 0.0 2.0 0.2 0.4 0.6 1.0 0.8 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 1.3 12 ID = 250 mA 1.0 10 8 0.7 Power (W) V GS(th) Variance (V) 4 0.4 6 0.1 4 −0.2 2 TA = 25_C −0.5 −50 −25 0 25 50 75 100 125 0 150 0.01 0.1 TJ − Temperature (_C) 10 100 600 Safe Operating Area 10 IDM Limited *rDS(on) Limited 10 ms 100 ms 1 I D − Drain Current (A) 1 Time (sec) 1 ms 0.1 10 ms ID(on) Limited 100 ms 0.01 TA = 25_C Single Pulse 10 s, 1 s dc, 100 s BVDSS Limited 0.001 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73238 S-42449—Rev. A, 10-Jan-05 Si2325DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 0.02 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73238. Document Number: 73238 S-42449—Rev. A, 10-Jan-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1