VISHAY 2N6660JANTXV

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
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Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
3
Configuration
• Military Qualified
•
•
•
•
•
Single
TO-205AD
(TO-39)
BENEFITS
•
•
•
•
•
•
S
1
2
Low On-Resistence: 1.3 
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage
APPLICATIONS
3
G
Guaranteed Reliability
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
D
Top View
ORDERING INFORMATION
PART
DESCRIPTION/DSCC
PART NUMBER
PACKAGE
2N6660
2N6660-2
2N6660JANTX
VISHAY ORDERING
PART NUMBER
Commercial
2N6660
Commercial, Lead (Pb)-free
2N6660-E3
www.vishay.com/doc?67884
See -2 Flow Document
2N6660-2
JANTX2N6660 (std Au leads)
2N6660JTX02
TO-205AD
(TO-39)
2N6660JANTXV
JANTX2N6660 (with solder)
2N6660JTXL02
JANTX2N6660P (with PIND)
2N6660JTXP02
JANTXV2N6660 (std Au leads)
2N6660JTXV02
JANTXV2N6660P (with PIND)
2N6660JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain
TC = 25 °C
TC = 100 °C
Currenta
Maximum Power Dissipation
ID
IDM
TC = 25 °C
TA = 25 °C
PD
UNIT
V
0.99
0.62
A
3
6.25
W
0.725
Thermal Resistance, Junction-to-Ambientb
RthJA
170
Thermal Resistance, Junction-to-Case
RthJC
20
TJ, Tstg
- 55 to 150
Operating Junction and Storage Temperature Range
°C/W
°C
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
LIMITS
PARAMETER
MIN.
TYP.a
SYMBOL
TEST CONDITIONS
MAX.
VDS
VDS = 0 V, ID = 10 μA
60
75
-
VDS = VGS, ID = 1 mA
0.8
1.7
2
TC = - 55 °C
-
-
2.5
TC = 125 °C
0.3
-
-
-
-
± 100
-
-
± 500
-
-
1
-
-
100
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VGS(th)
VDS = 0 V
Gate-Body Leakage
IGSS
VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
On-State Drain Current
ID(on)
VGS = 10 V
VDS = 10 V
-
2
-
VGS = 5 V
ID = 0.3 A
-
2
5
ID = 1 A
-
1.3
3
-
2.4
5.6
Drain-Source On-State Resistanceb
RDS(on)
TC = 125 °C
VDS = 48 V
TC = 125 °C
VGS = 10 V
TC = 125 °C
V
nA
μA
A

Forward Transconductanceb
gfs
VDS = 7.5 V, ID = 0.525 A
170
350
-
mS
Diode Forward Voltage
VSD
IS = 0.99 A, VGS = 0 V
0.7
0.8
1.6
V
Dynamic
Input Capacitance
Ciss
-
35
50
Output Capacitance
Coss
-
25
40
Reverse Transfer Capacitance
Crss
-
7
10
Drain-Source Capacitance
Cds
-
30
-
-
8
10
-
8.5
10
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 25 V, RL = 23 
ID  1 A, VGEN = 10 V, Rg = 25 
ns
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW  300 μs duty cycle  2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
100
VGS = 10 V
2.8 V
1.6
80
7V
I D - Drain Current (mA)
I D - Drain Current (A)
VGS = 10 V
8V
6V
1.2
5V
0.8
4V
0.4
2.6 V
60
2.4 V
40
2.2 V
20
3V
2V
0
0
1
2
3
4
1.8 V
2.0 V
0
0
5
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
1.0
2.8
TJ = - 55 °C
25 °C
2.4
VDS = 15 V
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
0.8
125 °C
0.6
0.4
0.2
1.0 A
0.5 A
2.0
1.6
1.2
0.8
ID = 0.1 A
0.4
0
0
0
4
2
6
8
0
10
VGS - Gate-Source Voltage (V)
R DS(on) - Drain-Source On-Resistance (Normalized)
R DS(on) - Drain-Source On-Resistance (Ω)
2.0
VGS = 10 V
1.0
0.5
0
0.4
0.8
1.2
1.6
16
20
2.25
VGS = 10 V
2.00
I D = 1.0 A
1.75
0.2 A
1.50
1.25
1.00
0.75
0.50
- 50
2.0
- 10
30
70
110
150
TJ - Junction Temperature (°C)
I D - Drain Current (A)
On-Resistance vs. Drain Current
S11-1542-Rev. D, 01-Aug-11
12
On-Resistance vs. Gate-to-Source Voltage
2.5
0
8
VGS - Gate-Source Voltage (V)
Transfer Characteristics
1.5
4
Normalized On-Resistance vs. Junction Temperature
3
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
120
VGS = 0 V
VDS = 5 V
f = 1 MHz
100
C - Capacitance (pF)
I D - Drain Current (mA)
TJ = 150 °C
1
25 °C
0.1
80
60
40
C iss
C oss
20
C rss
125 °C
- 55 °C
0.01
0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
0
10
20
Threshold Region
40
50
Capacitance
100
15.0
I D = 1.0 A
50
12.5
VDS = 30 V
10.0
t - Switching Time (ns)
VGS - Gate-to-Source Voltage (V)
30
VDS - Drain-to-Source Voltage (V)
48 V
7.5
5.0
2.5
V DD = 25 V
Rg = 25 Ω
V GS = 0 V to 10 V
20
10
td(off)
5
tr
td(on)
tf
2
1
0.1
0
0
100
200
300
400
500
600
Q g - Total Gate Charge (pC)
Gate Charge
1
I D - Drain Current (A)
10
Load Condition Effects on Switching
1.0
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
Single Pulse
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 20 °C/W
0.02
0.01
3. TJM - TC = PDMZthJC(t)
0.01
0.1
1.0
10
100
1K
10 K
t1 - Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70223.
S11-1542-Rev. D, 01-Aug-11
4
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-205AD (TO-39 TALL LID)
CD
INCHES
P
Q
Dim
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
r
TL
TW
m
CH
L1
LU
L2
LL
Seating
Plane
MILLIMETERS
Min
Max
Min
Max
0.305
0.335
7.75
8.51
0.240
0.260
6.10
6.60
0.335
0.370
8.51
0.200 TP
Notes
9.40
5.08 TP
6
0.016
0.021
0.41
0.53
7, 8
0.500
0.750
12.70
19.05
7, 8
0.016
0.019
0.41
0.48
7, 8
—
0.050
—
1.27
7, 8
0.250
—
6.35
—
7, 8
0.100
—
2.54
—
5
—
0.050
—
1.27
4
—
0.010
—
0.25
9
0.029
0.045
0.74
1.14
3
0.028
0.034
0.71
0.86
2
45_ TP
45_ TP
6
Dimensions (see notes 1, 2, 9, 11, 12)
ECN: S-40373—Rev. C, 15-Mar-04
DWG: 5511
LD
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general
information only.
HD
2.
∝
1
2
CL
TW
3
r
TL
LC
Document Number: 71367
09-Mar-04
Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011
(0.028 mm).
3.
Dimension TL measured from maximum HD.
4.
Outline in this zone is not controlled.
5.
Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This
zone is controlled for automatic handling.
6.
Leads at guage plane 0.054+0.001, −0.000 (1.37+0.03, −0.00 mm) below
seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at
maximum material condition (MMC) relative to tab at MMC.
7.
LU applies between L1 and L2, LD applies between L2 and L maximum.
Diameter is uncontrolled in L1 and beyond LL minimum.
8.
All three leads.
9.
Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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