® RT8231A/B Complete DDR Memory Power Supply Controller General Description The RT8231A/B provides a complete power supply for DDR2/DDR3/DDR3L/LPDDR3/DDR4/LPDDR4 memory systems. It integrates a synchronous PWM Buck controller with a 1.5A sink/source tracking linear regulator and buffered low noise reference. RT8231A/B supports all of the sleep state controls placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5. The RT8231A/B provides protections including OVP, UVP, and thermal shutdown. The RT8231A/B is available in the WQFN-20L 3x3 package. The PWM controller provides the low quiescent current, high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high-voltage batteries to generate low-voltage chipset RAM supplies in notebook computers. The constant on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns “instant-on” response to load transients while maintaining a relatively constant switching frequency. Applications DDR2/DDR3/DDR3L/LPDDR3/DDR4/LPDDR4 Memory Power Supplies Notebook computers SSTL18, SSTL15 and HSTL bus termination Pin Configurations The RT8231A/B achieves high efficiency at a reduced cost by eliminating the current-sense resistor found in traditional current mode PWMs. Efficiency is further enhanced by its ability to drive very large synchronous rectifier MOSFETs. The Buck conversion allows this device to directly step down high-voltage batteries for the highest possible efficiency. VTT VLDOIN BOOT UGATE PHASE (TOP VIEW) 20 19 18 17 16 VTTGND VTTSNS GND VTTREF VDDQ The 1.5A sink/source LDO maintains fast transient response only requiring a 10μF ceramic output capacitor. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The 1 15 2 14 GND 3 4 13 21 5 12 11 7 8 9 10 FB S3 S5 TON PGOOD 6 LGATE PGND CS VDD VID WQFN-20L 3x3 Simplified Application Circuit VIN VVDD PGOOD VTT VDD TON RT8231A/B UGATE BOOT PGOOD PHASE VTT VTTSNS CS S3 S5 VID FB VTTREF VDDQ GND Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 VVDDQ LGATE VLDOIN is a registered trademark of Richtek Technology Corporation. www.richtek.com 1 RT8231A/B Features PWM Controller Adjustable Current Limit with Low-Side RDS(ON) Sensing Low Quiescent Supply Current Quick Load-Step Response within 100ns 1% VVDDQ Accuracy Over Line and Load Adjustable 0.675V to 3.3V Output Range for 1.8V (DDR2), 1.5V (DDR3), 1.35V (DDR3L), 1.2V (LPDDR3), 1.2V (DDR4) and 1.1V (LPDDR4) 4.5V to 26V Battery Input Range Resistor Adjustable Frequency Over-/Under-Voltage Protection Internal Voltage Ramp Soft-Start Drives Large Synchronous Rectifier MOSFETs Power Good Indicator 1.5A LDO (VTT), Buffered Reference (VTTREF) Capable to Sink and Source Up to 1.5A LDO Input Available to Optimize Power Losses Requires Only 10μ μF Ceramic Output Capacitor Integrated Divider Tracks 1/2 VDDQ for both VTT and VTTREF Accuracy ±20mV for both VTTREF and VTT Supports High-Z in S3 and Soft-Off in S4/S5 RoHS Compliant and Halogen Free Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 2 Ordering Information RT8231A/B Package Type QW : WQFN-20L 3x3 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free) VDDQ and VTT Discharge Control A : Tracing Mode B : Non-Tracking Mode Note : Richtek products are : RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. Suitable for use in SnPb or Pb-free soldering processes. Marking Information RT8231AGQW 24= : Product Code 24=YM DNN YMDNN : Date Code RT8231BGQW 3T= : Product Code 3T=YM DNN YMDNN : Date Code is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B Functional Pin Description Pin No. Pin Name Pin Function 1 VTTGND Power Ground for the VTT LDO. 2 VTTSNS Voltage Sense Input for the VTT LDO. Connect to the terminal of the VTT_LDO output capacitor. GND The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. 4 VTTREF VTTREF Buffered Reference Output. 5 VDDQ Reference Input for VTT and VTTREF. 6 FB Feedback Voltage Input. Connect to a resistive voltage divider from VDDQ to GND to adjust the output voltage. 7 S3 VTT LDO Enable Control Input. Do not leave this pin floating. 8 S5 PWM Enable Control Input. Do not leave this pin floating. 9 TON Set the UGATE On-Time Through a Pull-Up Resistor Connecting to VIN. 10 PGOOD Power Good Open-Drain Output. In high state when VDDQ output voltage is within the target range. 11 VID Internal Reference Voltage Setting. 12 VDD Supply Voltage Input for the Analog Supply and LGATE Gate Driver. 13 CS Current Limit Threshold Setting Input. Connect to GND through the voltage setting resistor. 14 PGND Power Ground for Low-Side MOSFET. 15 LGATE Low-Side Gate Driver Output for VDDQ. 16 PHASE Switch Node. External inductor connection for VDDQ and behave as the current sense comparator input for Low-Side MOSFET RDS(ON) sensing. 17 UGATE High-Side Gate Driver Output for VDDQ. 18 BOOT Bootstrap Supply for High-Side Gate Driver. 19 VLDOIN Power Supply for VTT LDO. 20 VTT Power Output for the VTT LDO. 3, 21 (Exposed Pad) Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 is a registered trademark of Richtek Technology Corporation. www.richtek.com 3 RT8231A/B Functional Block Diagram Buck Controller TRIG VDDQ On-Time TON 1-SHOT VREF BOOT + + - R Comp S UGATE Q PHASE + 115%VREF FB OV Latch S1 Q UV Latch S1 Q + 0.45V - Min. TOFF TRIG LGATE PGND DEM + 85% VREF SS Int VDD SS Timer - Reference Voltage Selector S5 VDD 5µA + Thermal Shutdown CS 1/10 VREF VID PGOOD VTT LDO VDDQ S5 S3 Non-Tracking Discharge VTTREF Thermal Shutdown VLDOIN + - + - GND + - VTTSNS VTT + - VTTGND Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 4 is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B Operation The RT8231A/B is a constant on-time synchronous stepdown controller. In normal operation, the high-side N-MOSFET is turned on when the output voltage is lower than VREF, and is turned off after the internal one-shot timer expires. While the high-side N-MOSFET is turned off, the low-side N-MOSFET is turned on to conduct the inductor current until next cycle begins. Soft-Start (SS) For internal soft-start function, an internal current source charges an internal capacitor to build the soft-start ramp voltage. The output voltage will track the internal ramp voltage during soft-start interval. PGOOD The power good output is an open-drain architecture. When the soft-start is finished, the PGOOD open-drain output will be high impedance. Current Limit The current limit circuit employs a unique “valley” current sensing algorithm. If the magnitude of the current sense signal at PHASE is above the current limit threshold, the PWM is not allowed to initiate a new cycle. The current limit threshold can be set with an external voltage setting resistor on the CS pin. Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 Over-Voltage Protection (OVP) & Under-Voltage Protection (UVP) The output voltage is continuously monitored for overvoltage and under-voltage protection. When the output voltage exceeds its set voltage threshold( 115% of VOUT), UGATE goes low and LGATE is forced high. When the feedback voltage is less than 0.45V, under-voltage protection is triggered and then both UGATE and LGATE gate drivers are forced low. The controller is latched until VDD is re-supplied and exceeds the POR rising threshold voltage or S5 is reset. VTT Linear Regulator and VTTREF This VTT linear regulator employs ultimate fast response feedback loop so that small ceramic capacitors are enough for keeping track of VTTREF within 40mV at all conditions, including fast load transient. The VTTREF block consists of on-chip 1/2 divider, LPF and buffer. This regulator also has sink and source capability up to 10mA. Bypass VTTREF to GND with a 33nF ceramic capacitor for stable operation. is a registered trademark of Richtek Technology Corporation. www.richtek.com 5 RT8231A/B Absolute Maximum Ratings (Note 1) Supply Input Voltage, TON to GND -----------------------------------------------------------------------------------BOOT to PHASE --------------------------------------------------------------------------------------------------------- PHASE to GND DC ----------------------------------------------------------------------------------------------------------------------------< 20ns ---------------------------------------------------------------------------------------------------------------------- LGATE to GND DC ----------------------------------------------------------------------------------------------------------------------------< 20ns ---------------------------------------------------------------------------------------------------------------------- UGATE to PHASE DC ----------------------------------------------------------------------------------------------------------------------------< 20ns ---------------------------------------------------------------------------------------------------------------------- VDD, CS, S3, S5, VTTSNS, VDDQ, VID, VTTREF, VTT, VLDOIN, FB, PGOOD to GND --------------- PGND, VTTGND to GND ------------------------------------------------------------------------------------------------ Other Pins ------------------------------------------------------------------------------------------------------------------ Power Dissipation, PD @ TA = 25°C WQFN-20L 3x3 ----------------------------------------------------------------------------------------------------------- Package Thermal Resistance (Note 2) WQFN-20L 3x3, θJA ------------------------------------------------------------------------------------------------------WQFN-20L 3x3, θJC ----------------------------------------------------------------------------------------------------- Junction Temperature ---------------------------------------------------------------------------------------------------- Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------ Storage Temperature Range ------------------------------------------------------------------------------------------- ESD Susceptibility (Note 3) HBM (Human Body Model) --------------------------------------------------------------------------------------------- Recommended Operating Conditions −0.3V to 32V −0.3V to 6V −0.3V to 32V −8V to 38V −0.3V to 6V −2.5V to 7.5V −0.3V to 6V −5V to 7.5V −0.3V to 6V −0.3V to 0.3V −0.3V to 6.5V 3.33W 30°C/W 7.5°C/W 150°C 260°C −65°C to 150°C 2kV (Note 4) Input Voltage, VIN --------------------------------------------------------------------------------------------------------Control Voltage, VDD ----------------------------------------------------------------------------------------------------Junction Temperature Range -------------------------------------------------------------------------------------------Ambient Temperature Range -------------------------------------------------------------------------------------------- 4.5V to 26V 4.5V to 5.5V −40°C to 125°C −40°C to 85°C Electrical Characteristics (VDD = 5V, VIN = 12V, RTON = 620kΩ, TA = 25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit PWM Controller Quiescent Supply Current FB Forced abov e the Regulation Point, VS5 = 5V, VS3 = 0V, Not Switching -- 135 -- A TON Operating Current RTON = 620k, VIN = 12V -- 19 -- A IVLDOIN BIAS Current VS5 = VS3 = 5V, VTT = No Load -- 1 -- A IVLDOIN Standby Current VS5 = 5V, VS3 = 0, VTT = No Load -- 0.1 10 A Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 6 is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B Parameter Shutdown Current (VS5 = VS3 = 0V) FB Error Comparator Threshold Symbol ISHDN VREF Test Conditions Min Typ Max Unit VDD -- 0.1 10 A TON -- 0.1 5 A S5/S3 1 0.1 1 A VLDOIN -- 0.1 1 A VID -- 0.5 1 A VREF = 0.675V/0.75V 1 0 1 % 0.675 -- 3.3 V 320 400 480 kHz 250 400 550 ns -- 15 -- 4.5 5 5.5 A GND PHASE 5 -- 10 mV GND PHASE, RCS = 160k VFB Falling. For both VID is high or low. FB Forced below UV Threshold 70 80 90 mV 0.4 0.45 0.5 V -- 30 -- s With Respect to Error Comparator Threshold 110 115 120 % -- 5 -- s 3.9 4.2 4.5 V VDDQ Voltage Range Switch Frequency fSW RTON = 620k, VIN = 12V, VDDQ = 1.5V, IOUT = 20A (Note 5) Minimum Off-Time VDDQ Shutdown Discharge Resistance VS5 = 0V, VS3 = 0V Current Sensing CS Pin Source Current Zero Crossing Threshold Fault Protection Current Limit (Positive) Output UV Threshold VUVP UVP Latch Delay OVP Threshold VOVP OVP Latch Delay FB Forced above OV Threshold VDD POR Threshold Rising Edge, Hysteresis = 120mV, PWM Disabled below this Level Voltage Ramp Soft-Start Time From S5 Going High to VFB = 0.675V -- 1 -- mS UV Blank Time From S5 Signal Going High -- 5 -- mS -- 165 -- C Thermal Shutdown TSD Driver On-Resistance UGATE Gate Driver Source RUGATEsr BOOT PHASE Forced to 5V -- 2.5 5 UGATE Gate Driver Sink RUGATEsk BOOT PHASE Forced to 5V -- 1.5 3 LGATE Gate Driver Source RLGATEsr DL, High State -- 2.5 5 LGATE Gate Driver Sink RLGATEsk DL, Low State -- 0.8 1.6 LGATE Rising (Phase = 1.5V) -- 40 -- UGATE Rising -- 40 -- VDD to BOOT, 10mA -- -- 80 Dead Time Internal Boost Charging Switch On-Resistance Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 ns is a registered trademark of Richtek Technology Corporation. www.richtek.com 7 RT8231A/B Parameter Symbol Test Conditions Min Typ Max Unit Logic-High 2 -- -- Logic-Low -- -- 0.8 1 0 1 750 -- -- -- -- 300 20 15 10 % Logic I/O S3, S5 Input Voltage Logic Input Current S3, S5 = VDD / GND Logic-High VID Input Threshold Voltage Logic-Low V A mV PGOOD (Upper Side Threshold Decide by OV Threshold) Trip Threshold (Falling) Measured at FB, with Respect to Reference, No Load. Hysteresis = 2% Fault Propagation Delay Falling Edge, FB Forced below PGOOD Trip Threshold -- 5 -- s Output Low Voltage ISINK = 1mA -- -- 0.4 V High State, Forced to 5V -- -- 1 A VDDQ = VLDOIN = 1.2V/1.35V/1.5V/ 1.8V, |IVTT | = 0A 20 -- 20 VDDQ = VLDOIN = 1.2V/1.35V/1.5V/ 1.8V, |IVTT | < 1A 30 -- 30 VDDQ = VLDOIN = 1.2V/1.35V, |IVTT | < 1.2A 40 -- 40 VDDQ = VLDOIN = 1.5V/1.8V, |IVTT | < 1.5A 40 -- 40 Leakage Current I LEAK VTT LDO VTT Output Tolerance VVTTTOL mV VTT Source Current Limit I VTTOCLSRC VTT = 0V 1.6 2.6 3.6 A VTT Sink Current Limit I VTTOCLSNK VTT = VDDQ 1.6 2.6 3.6 A VTT Leakage Current I VTTLK 10 -- 10 A VTTSNS Leakage Current I VTTSNSLK V S5 = 5V, S3 = 0V, VTT = VDDQ 2 ISINK = 1mA 1 -- 1 A VTT Discharge Current I DSCHRG VDDQ = 0V, VTT = 0.5V, S5 = S3 = 0V 10 30 -- mA VTTREF Output Voltage VVTTREF V VVTT = VVTTREF = VDDQ , 2 VVDDQ = 1.5V -- 0.75 -- V VLDOIN = VVDDQ = 1.5V, |IVTTREF| < 10mA 15 -- 15 VLDOIN = VVDDQ = 1.8V, |IVTTREF| < 10mA 18 -- 18 10 40 80 VDDQ/2, VTTREF Output Voltage Tolerance VVTTREFTOL VTTREF Source Current Limit I VTTREFOCL VVTTREF = 0V Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 8 mV mA is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. Not production tested. Test condition refer to electrical characteristics using application circuit. Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 is a registered trademark of Richtek Technology Corporation. www.richtek.com 9 RT8231A/B Typical Application Circuit (Optional) 12 VVDD C1 1µF R1 100k C2 10µF VDD TON UGATE 10 PGOOD 20 VTT PGOOD VTT 0.675V RT8231A/B 2 R2 270k VTT Control VDDQ Control VTTSNS BOOT PHASE 9 17 18 7 S3 8 S5 FB 6 VTTREF 4 14 VDDQ VTTGND PGND 3, GND 21 (Exposed Pad) VLDOIN VID R4 0 L1 1µH C4 0.1µF 15 LGATE C3 10µF x 2 Q1 886N03LS 16 13 CS 1 VIN R3 620k R7 Q2 886N03LS C7 R5 16k C8 C5 220µF C9 R6 20k C6 33nF 5 VVDDQ 1.35V 19 11 Low Figure 1. Typical Application Circuit with POSCAP Solution (Optional) 12 VVDD C1 1µF R1 100k VTT Control VDDQ Control C2 10µF VDD R2 270k TON UGATE 10 PGOOD 20 VTT PGOOD VTT 0.675V RT8231A/B 2 VTTSNS BOOT PHASE 9 17 18 7 S3 8 S5 FB 6 VTTREF 4 14 VTTGND PGND 3, GND 21 (Exposed Pad) VDDQ VLDOIN VID R4 0 C4 0.1µF 15 LGATE Q2 886N03LS 5 C3 10µF x 2 Q1 886N03LS 16 13 CS 1 VIN R3 620k C6 33nF L1 1µH VVDDQ 1.35V R7 C7 R5 16k C8 C5 22µF x 4 C9 R6 20k 19 11 Low Figure 2. Typical Application Circuit with Pure MLCC Solution Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 10 is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B Typical Operating Characteristics Switching Frequency vs. Load Current Switching Frequency vs. Load Current 450 500 DDR3L, VIN = 7.4V, VDDQ = 1.35V, S3 = GND, S5 = 5V, RTON = 620kΩ Switching Frequency (kHz)1 Switching Frequency (kHz)1 500 400 350 300 250 200 150 100 50 0 450 DDR3L, VIN = 12V, VDDQ = 1.35V, S3 = GND, S5 = 5V, RTON = 620kΩ 400 350 300 250 200 150 100 50 0 0.01 0.1 1 10 0.01 Load Current (A) DDR3L, VIN = 19V, VDDQ = 1.35V, S3 = GND, S5 = 5V, RTON = 620kΩ 400 350 300 250 200 150 100 50 450 DDR4, VIN = 7.4V, VDDQ = 1.2V, S3 = GND, S5 = 5V, RTON = 620kΩ 400 350 300 250 200 150 100 50 0 0 0.01 0.1 1 10 0.01 Load Current (A) 1 10 Switching Frequency vs. Load Current 500 DDR4, VIN = 12V, VDDQ = 1.2V, S3 = GND, S5 = 5V, RTON = 620kΩ Switching Frequency (kHz)1 Switching Frequency (kHz)1 450 0.1 Load Current(A) Switching Frequency vs. Load Current 500 10 Switching Frequency vs. Load Current 500 Switching Frequency (kHz)1 Switching Frequency (kHz)1 450 1 Load Current (A) Switching Frequency vs. Load Current 500 0.1 400 350 300 250 200 150 100 50 450 DDR4, VIN = 19V, VDDQ = 1.2V, S3 = GND, S5 = 5V, RTON = 620kΩ 400 350 300 250 200 150 100 50 0 0 0.01 0.1 1 Load Current (A) Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 10 0.01 0.1 1 10 Load Current (A) is a registered trademark of Richtek Technology Corporation. www.richtek.com 11 RT8231A/B Efficiency vs. Load Current 100 90 90 80 80 70 70 Efficiency (%) Efficiency (%) Efficiency vs. Load Current 100 60 50 40 30 20 10 0 0.001 60 50 40 30 20 10 DDR3L, VIN = 7.4V, VDDQ = 1.35V, S3 = S5 = 5V 0.010 0.100 1.000 0 0.001 10.000 DDR3L, VIN = 12V, VDDQ = 1.35V, S3 = S5 = 5V 0.010 Load Current (A) 90 90 80 80 70 70 Efficiency (%) Efficiency (%) 100 60 50 40 30 20 60 50 40 30 20 10 DDR3L, VIN = 19V, VDDQ = 1.35V, S3 = S5 = 5V 0.010 0.100 1.000 0 0.001 10.000 DDR4, VIN = 7.4V, VDDQ = 1.2V, S3 = S5 = 5V 0.010 Load Current (A) 90 90 80 80 70 70 60 50 40 30 10.000 60 50 40 30 20 20 DDR4, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V 0.010 0.100 1.000 Load Current (A) Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 12 1.000 Efficiency vs. Load Current 100 Efficiency (%) Efficiency (%) Efficiency vs. Load Current 0 0.001 0.100 Load Current (A) 100 10 10.000 Efficiency vs. Load Current Efficiency vs. Load Current 0 0.001 1.000 Load Current (A) 100 10 0.100 10.000 10 0 0.001 DDR4, VIN = 19V, VDDQ = 1.2V, S3 = S5 = 5V 0.010 0.100 1.000 10.000 Load Current (A) is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B VDDQ Output Voltage vs. Load Current 1.25 1.39 1.24 1.38 1.23 Output Voltage (V) Output Voltage (V) VDDQ Output Voltage vs. Load Current 1.40 1.37 1.36 1.35 1.34 1.33 1.32 1.22 1.21 1.20 1.19 1.18 1.17 1.31 1.16 DDR3L, VIN = 12V, VDDQ = 1.35V, S3 = S5 = 5V 1.30 DDR4, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V 1.15 0.01 0.1 1 10 0.01 0.1 10 VTT Output Voltage vs. Load Current 0.700 0.625 0.695 0.620 0.690 0.615 Output Voltage (V) Output Voltage (V) VTT Output Voltage vs. Load Current 0.685 0.680 0.675 0.670 0.665 0.660 0.610 0.605 0.600 0.595 0.590 0.585 0.655 DDR3L, VIN = 12V, VTT = 0.675V, S3 = S5 = 5V 0.650 -1.5 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 0.580 DDR4, VIN = 12V, VTT = 0.6V, S3 = S5 = 5V 0.575 1.5 -1.5 -1.2 -0.9 -0.6 -0.3 Quiescent Current vs. Input Voltage 148 0.9 146 0.8 Shutdown Current (µA) 1.0 144 142 140 138 136 134 No Switching, S3 = GND, S5 = 5V 130 4 6 8 10 12 14 16 18 20 22 Input Voltage (V) Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 0.3 0.6 0.9 1.2 1.5 Shutdown Current vs. Input Voltage 150 132 0 Load Current (A) Load Current (A) Quiescent Current (µA) 1 Load Current (A) Load Current (A) 24 26 0.7 0.6 0.5 0.4 0.3 0.2 0.1 S3 = S5 = GND 0.0 4 6 8 10 12 14 16 18 20 22 24 26 Input Voltage (V) is a registered trademark of Richtek Technology Corporation. www.richtek.com 13 RT8231A/B VTT Voltage vs. Temperature 0.625 1.24 0.620 1.23 0.615 1.22 0.610 VTT Voltage (V) VDDQ Voltage (V) VDDQ Voltage vs. Temperature 1.25 1.21 1.20 1.19 1.18 1.17 0.605 0.600 0.595 0.590 0.585 1.16 DDR4, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V 1.15 -50 -25 0 25 50 75 100 0.580 DDR4, VIN = 12V, VTT = 0.6V, S3 = S5 = 5V 0.575 125 -50 Temperature (°C) VDDQ (1V/Div) VTT (1V/Div) VTT (1V/Div) S5 (5V/Div) PHASE (10V/Div) PGOOD (5V/Div) 50 75 100 125 VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V, ILoad = 10A Time (1ms/Div) Time (1ms/Div) Tracking Discharge Shutdown Non-Tracking Discharge Shutdown VDDQ (1V/Div) VTT (1V/Div) VDDQ (1V/Div) VTT (1V/Div) VTTREF (1V/Div) VTTREF (1V/Div) S5 (5V/Div) S5 (5V/Div) No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V Time (200μs/Div) Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 14 25 VDDQ Start Up VDDQ (1V/Div) No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V 0 Temperature (°C) VDDQ and VTT Start Up PGOOD (5V/Div) -25 No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V Time (200μs/Div) is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B VTT Load Transient Response VDDQ Load Transient Response DDR4, VIN = 12V VDDQ (50mV/Div) VTT (20mV/Div) UGATE (20V/Div) VTTREF (20mV/Div) LGATE (5V/Div) DDR4, VIN = 12V IL (10A/Div) IVTT (2A/Div) VDDQ = 1.2V, S3 = S5 = 5V, ILoad = −1.5A to 1.5A VDDQ = 1.2V, S3 = S5 = 5V, ILoad = 0.1A to 10A Time (40μs/Div) Time (50μs/Div) Over Voltage Protection Under Voltage Protection VDDQ (1V/Div) VDDQ (1V/Div) PHASE (5V/Div) UGATE (20V/Div) LGATE (5V/Div) LGATE (5V/Div) PGOOD (5V/Div) PGOOD (5V/Div) No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V Time (40μs/Div) Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V Time (40μs/Div) is a registered trademark of Richtek Technology Corporation. www.richtek.com 15 RT8231A/B Application Information The RT8231A/B PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage chipset RAM supplies in notebook computers. Richtek's Mach ResponseTM technology is specifically designed for providing 100ns “instant-on” response to load steps while maintaining a relatively constant operating frequency and inductor operating point over a wide range of input voltages. The topology solves the poor load transient response timing problems of fixedfrequency current mode PWMs, and avoids problems caused by widely varying switching frequencies in conventional constant-on-time and constant- off-time PWM schemes. The DRV TM mode PWM modulator is specifically designed to have better noise immunity for such a single output application. The 1.5A sink/source LDO maintains fast transient response, only requiring 10μF of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The RT8231A/B supports all of the sleep state controls, placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5. PWM Operation The Mach ResponseTM DRVTM mode controller relies on the output filter capacitor's Effective Series Resistance (ESR) to act as a current-sense resistor, so the output ripple voltage provides the PWM ramp signal. Referring to the function block diagrams of the RT8231A/B, the synchronous high-side MOSFET is turned on at the beginning of each cycle. After the internal one-shot timer expires, the MOSFET will be turned off. The pulse width of this one-shot is determined by the converter's input and output voltages to keep the frequency fairly constant over the entire input voltage range. Another one-shot sets a minimum off-time (400ns typ.). On-Time Control The on-time one-shot comparator has two inputs. One input looks at the output voltage, while the other input samples the input voltage and converts it to a current. Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 16 This input voltage proportional current is used to charge an internal on-time capacitor. The on-time is the time required for the voltage on this capacitor to charge from zero volts to VVDDQ, thereby making the on-time of the high-side switch directly proportional to the output voltage and inversely proportional to the input voltage. This implementation results in a nearly constant switching frequency without the need of a clock generator, as shown below : tON 3.85p x RTON x VVDDQ / (VIN 0.5) + RTON x 1 And then the switching frequency is : f VVDDQ / (VIN x t ON ) where RTON is the resistor connected from VIN to the TON pin. Note that the setting on-time must be longer than 100ns (typ.) of the minimum on-time and shorter than 3μs (typ.) of the maximum on-time. Diode Emulation Mode In diode emulation mode, the RT8231A/B automatically reduces switching frequency at light load conditions to maintain high efficiency. As the output current decreases from heavy load condition, the inductor current will also be reduced and eventually come to the point where its valley touches zero current, which is the boundary between continuous conduction and discontinuous conduction modes. To emulate the behavior of diodes, the low-side MOSFET allows only partial negative current to flow when the inductor freewheeling current reaches negative. As the load current is further decreased, it takes longer and longer time to discharge the output capacitor to the level that requires the next “ON” cycle. The on-time is kept the same as that in the heavy load condition. In contrast, when the output current increases from light load to heavy load, the switching frequency increases to the preset value as the inductor current reaches the continuous condition. The transition load point to the light load operation is shown in Figure 3 and can be calculated as follows : V VVDDQ ILOAD(SKIP) IN x tON 2L where tON is the on-time. is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B IL The RT8231A/B uses the on resistance of the synchronous rectifier as the current sense element and supports temperature compensated MOSFET RDS(ON) sensing. The Slope = (VIN - VVDDQ) / L IPEAK ILOAD = IPEAK / 2 0 tON t Figure 3. Boundary Condition of CCM/DCM The switching waveforms may appear noisy and asynchronous when light load causes diode-emulation operation, but this is a normal operating condition that results in high light load efficiency. Trade offs in DEM noise vs. light load efficiency is made by varying the inductor value. Generally, low inductor values produce a broader efficiency vs. load curve, while higher values result in higher full load efficiency (assuming that the coil resistance remains fixed) and less output voltage ripple. The disadvantages for using higher inductor values include larger physical size and degraded load transient response (especially at low input voltage levels). Current Limit Setting for VDDQ (CS) The RT8231A/B provides cycle-by-cycle current limit control. The current limit circuit employs a unique “valley” current sensing algorithm. If the magnitude of the current sense signal at PHASE is above the current limit threshold, the PWM is not allowed to initiate a new cycle (Figure 4). The actual peak current is greater than the current limit threshold by an amount equal to the inductor ripple current. Therefore, the exact current limit characteristic and maximum load capability are a function of the sense resistance, inductor value, battery and output voltage. IL IPEAK ILOAD ILIM 0 t Figure 4. “Valley” Current Limit Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 setting resistor, RILIM, between the CS pin and VDD sets the current limit threshold. The CS pin sources an internal 5μA (typ.) current source at room temperature. This current has a 4700ppm/°C temperature slope to compensate the temperature dependency of RDS(ON). When the voltage drop across the low-side MOSFET equals the voltage across the RILIM setting resistor, the positive current limit will activate. The high-side MOSFET will not be turned on until the voltage drop across the low-side MOSFET falls below the current limit threshold. Choose a current limit setting resistor via the following equation : RLIMIT ILIMIT x RDS(ON) 10/ 5μA And then the CS pin voltage is VCS = RLIMIT x 5μA Note that the VCS should be set from 0.4V to 3V. Carefully observe the PCB layout guidelines to ensure that noise and DC errors do not corrupt the current-sense signal seen by PHASE and PGND. Current Protection for VTT The LDO has an internally fixed constant over-current limit of 2.6A while operating at normal condition. From then on, when the output voltage exceeds 20% of its set voltage, the internal power good signal will transit from high to low. MOSFET Gate Driver (UGATE, LGATE) The high-side driver is designed to drive high current, low RDS(ON) N-MOSFET(s). When configured as a floating driver, 5V bias voltage is delivered from the VDD supply. The average drive current is proportional to the gate charge at VGS = 5V times switching frequency. The instantaneous drive current is supplied by the flying capacitor between the BOOT and PHASE pins. A dead-time to prevent shoot through is internally generated between high-side MOSFET off to low-side MOSFET on, and low-side MOSFET off to high-side MOSFET on. is a registered trademark of Richtek Technology Corporation. www.richtek.com 17 RT8231A/B The low-side driver is designed to drive high current, low RDS(ON) N-MOSFET(s). The internal pull down transistor that drives LGATE low is robust, with a 0.8Ω typical onresistance. A 5V bias voltage is delivered from the VDD supply. The instantaneous drive current is supplied by the flying capacitor between VDD and PGND. For high current applications, some combinations of highand low-side MOSFETs may cause excessive gate drain coupling, which leads to efficiency killing, EMI producing shoot through currents. This is often remedied by adding a resistor in series on BOOT, which increases the turnon rising time of the high-side MOSFET without degrading the turn-off time (Figure 5). VIN BOOT R UGATE begins once the chip is enabled. During soft-start, internal bandgap circuit gradually ramps up the reference voltage from zero. The maximum reference value is set externally as described in Table 1. The soft-start function of VTT is achieved by the current limit and VTTREF voltage through the internal RC delay ramp up after S3 is high. During VTT startup, the current limit level is 2.6A. This allows the output to start up smoothly and safely under enough source/sink ability. While TSS is the rising period of VTT , the formula used to calculated this rising period is TSS = (VTT x CVTT)/ IVTTOCL, it's base on the value of output capacitor CVTT, the settled output voltage VTT and the output current limit IVTTOCL. VDDQ VTTREF TSS PHASE S3 Figure 5. Increasing the UGATE Rise Time VTT Power Good Output (PGOOD) The power good output is an open drain output that requires a pull-up resistor. When the output voltage is 15% below its set voltage, PGOOD will be pulled low. It is held low until the output voltage returns to 87% of its set voltage once more. During soft-start, PGOOD is actively held low and only allowed to be pulled high after soft-start is over and the output reaches 87% of its set voltage. There is a 5μs delay built into PGOOD circuitry to prevent false transition. POR Protection The RT8231A/B has a VDD supply power on reset protection (POR). When the VDD voltage is higher than 4.2V (typ.), VDDQ, VTT and VTTREF will be activated. This is a non-latch protection. Soft-Start The RT8231A/B provides an internal soft-start function to prevent large inrush current and output voltage overshoot when the converter starts up. Soft-start (SS) automatically Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 18 TSS = (VTT x CVTT)/IVTTOCL Output Over-Voltage Protection (OVP) The output voltage can be continuously monitored for overvoltage condition. If the output exceeds 15% of its set voltage threshold, over voltage protection will be triggered and the LGATE low-side gate driver will be forced high. This activates the low-side MOSFET switch which rapidly discharges the output capacitor and reduces the output voltage. There is a 5μs latch delay built into the overvoltage protection circuit. The RT8231A/B will be latched if the output voltage remains above the OV threshold after the latch delay period. The latched OVP will pull low PGOOD and can only be released by VDD power on reset or S5. Note that latching the LGATE high will cause the output voltage to dip slightly negative when energy has been previously stored in the LC tank circuit. For loads that cannot tolerate a negative voltage, place a power Schottky diode across the output to act as a reverse polarity clamp. If the over voltage condition is caused by a shorted highis a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B side switch, turning the low-side MOSFET on 100% will create an electrical shorted circuit between the battery and GND, to blow the fuse and disconnecting the battery from the output. Output Under-Voltage Protection (UVP) The output voltage can be continuously monitored for undervoltage condition. When UVP is enabled, the under voltage protection is triggered if the FB is less than 0.45V. Then, both UGATE and LGATE gate drivers will be forced low until next VDD or S5 reset. During soft-start, the UVP has a blanking time around 5ms. Thermal Protection The RT8231A/B features a thermal protection function. If the temperature exceeds the threshold, 165°C (typ.), the PWM output, VTTREF and VTT will be shut down. The RT8231A/B is latched once thermal shutdown is triggered and can only be released by VDD power on reset or S5. Output Voltage Setting (FB) Connect a resistive voltage divider at FB between VDDQ and GND to adjust the respective output voltage between 0.675V and 3.3V (Figure 6). Choose R2 to be approximately 10kΩ and solve for R1 using the equation as follows : R1 VVDDQ (Valley) VREF x 1 R2 where VREF is 0.75V or 0.675V depends on the VID setting in Table 1. Note that when the RT8231A/B operates from CCM to DEM, the reference voltage will add 10mV offset. VIN VVDDQ UGATE PHASE LGATE R1 VDDQ FB R2 GND Figure 6. Setting VDDQ with a Resistive Voltage Divider Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 Table 1. VID and Reference Voltage Setting VID Reference Voltage (V) High 0.675 Low 0.75 When the reference voltage is changed from 0.75V to 0.675V, the OVP latch will be masked for 120μs to prevent an unexpected shutdown. VTT Linear Regulator and VTTREF The RT8231A/B integrates a high performance low dropout linear regulator that is capable of sourcing and sinking currents up to 1.5A. This VTT linear regulator employs ultimate fast response feedback loop so that small ceramic capacitors are enough for keeping track of VTTREF within 40mV at all conditions, including fast load transient. To achieve tight regulation with minimum effect of wiring resistance, a remote sensing terminal, VTTSNS, should be connected to the positive node of the VTT output capacitor(s) as a separate trace from the VTT pin. For stable operation, total capacitance of the VTT output terminal can be equal to or greater than 10μF. It is recommended to attach two 10μF ceramic capacitors in parallel to minimize the effect of ESR and ESL. If ESR of the output capacitor is greater than 2mΩ, insert an RC filter between the output and VTTSNS input to achieve loop stability. The RC filter time constant should be almost the same or slightly lower than the time constant made by the output capacitor and its ESR. The VTTREF block consists of on-chip 1/2 divider, LPF and buffer. This regulator also has sink and source capability up to 10mA. Bypass VTTREF to GND with a 33nF ceramic capacitor for stable operation. Output Management by S3, S5 Control In DDR2/DDR3 memory applications, it is important to always keep VDDQ higher than VTT/VTTREF, even during start-up and shutdown. The RT8231A/B provides this management by simply connecting both S3 and S5 terminals to the sleep-mode signals such as SLP_S3 and SLP_S5 in notebook PC system. All VDDQ, VTTREF and VTT are turned on at S0 state (S3 = S5 = high). In S3 state (S3 = low, S5 = high), VDDQ and VTTREF voltages are kept on while VTT is turned off and left at high is a registered trademark of Richtek Technology Corporation. www.richtek.com 19 RT8231A/B impedance (high-Z) state. The VTT output is floated and does not sink or source current in this state. In S4/S5 states (S3 = S5 = low), all of the three outputs are disabled and discharged to ground. The code of each state represents the following: S0 = full ON, S3 = suspend to RAM (STR), S4 = suspend to disk (STD), S5 = soft OFF. (See Table 2) Table 2. S3 and S5 truth table STATE S3 S5 VDDQ VTTREF VTT S0 Hi Hi On On On S3 Lo Hi On On Off (Hi-Z) S4/S5 Lo Lo Off Off Off (Discharge) (Discharge) (Discharge) VDDQ and VTT Discharge Control The RT8231A/B discharges VDDQ, VTTREF and VTT outputs when S5 is low or in the S4/S5 state. The two discharge modes can be selected from different part no. as shown in Table 3. Table 3. Discharge Selection Part No. Discharge Mode RT8231A Tracking discharge RT8231B Non-tracking discharge When in tracking discharge mode, the RT8231A discharges outputs through the internal VTT regulator transistors and VTT output tracks half of the VDDQ voltage during this discharge. Note that the VDDQ discharge current flows via VLDOIN to VTTGND; thus VLDOIN must be connected to VDDQ in this mode. The internal LDO can handle up to 1.5A and discharge quickly. When in non-tracking discharge mode, the RT8231B discharges outputs using internal MOSFETs which are connected to VDDQ and VTT. The current capability of these MOSFETs is limited to discharge slowly. Note that the VDDQ discharge current flows from VDDQ to GND in this mode. In order to discharge smoothly, the RT8231B provides a special function that the low-side MOSFET will switch periodically as phase pin with remaining voltage. Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 20 Output Inductor Selection The switching frequency (on-time) and operating point (% ripple or LIR) determine the inductor value as follows : t x (VIN VVDDQ ) L ON LIR x ILOAD(MAX) where LIR is the ratio of the peak-to-peak ripple current to the maximum average inductor current. Find a low loss inductor having the lowest possible DC resistance that fits in the allotted dimensions. Ferrite cores are often the best choice, although powdered iron is inexpensive and can work well at 200kHz. The core must be large enough and not saturate at the peak inductor current (IPEAK) : IPEAK ILOAD(MAX) (LIR /2) x ILOAD(MAX) This inductor ripple current also impacts transient-response performance, especially at low VIN − VVDDQ differences. Low inductor values allow the inductor current to slew faster, replenishing charge removed from the output filter capacitors by a sudden load step. The peak amplitude of the output transient (VSAG) is also a function of the output transient. VSAG also features a function of the maximum duty factor, which can be calculated from the on-time and minimum off-time : VSAG (ILOAD )2 x L x (tON tOFF(MIN) ) 2 x COUT x VIN x tON VVDDQ x (tON tOFF(MIN) ) where minimum off-time, tOFF(MIN), is 400ns typically. Output Capacitor Selection The output filter capacitor must have low enough ESR to meet output ripple and load-transient requirements, yet have high enough ESR to satisfy stability requirements. Also, the capacitance must be high enough to absorb the inductor energy going from a full-load to no-load condition without tripping the OVP circuit. For CPU core voltage converters and other applications where the output is subject to violent load transients, the output capacitor's size depends on how much ESR is needed to prevent the output from dipping too low under a load transient. Ignoring the sag due to finite capacitance : VPP ESR ILOAD(MAX) is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B In non-CPU applications, the output capacitor's size depends on how much ESR is needed to maintain an acceptable level of output voltage ripple : Maximum Power Dissipation (W)1 ESR 3.6 VPP LIR x ILOAD(MAX) where VP−P is the peak-to-peak output voltage ripple. Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. The amount of overshoot due to stored inductor energy can be calculated as : VSOAR where IPEAK is the peak inductor current. 3.0 2.4 1.8 1.2 0.6 0.0 0 2 (IPEAK ) x L 2 x COUT x VVDDQ Four-Layer PCB 25 50 75 100 125 Ambient Temperature (°C) Figure 7. Derating Curve of Maximum Power Dissipation Thermal Considerations Layout Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : Layout is very important in high frequency switching converter design. If designed improperly, the PCB could radiate excessive noise and contribute to the converter instability. Certain points must be considered before starting a layout for the RT8231A/B. Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high voltage switching node. where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction to ambient thermal resistance. Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as short as possible to reduce stray inductance. For recommended operating condition specifications, the maximum junction temperature is 125°C. The junction to ambient thermal resistance, θJA, is layout dependent. For WQFN-20L 3x3 package, the thermal resistance, θJA, is 30°C/W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at TA = 25°C can be calculated by the following formula : All sensitive analog traces and components such as VDDQ, FB, PGND, PGOOD, CS, VDD, and TON should be placed away from high voltage switching nodes such as PHASE, LGATE, UGATE, and BOOT to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. P D(MAX) = (125°C − 25°C) / (30°C/W) = 3.33W for WQFN-20L 3x3 package VLDOIN should be connected to VDDQ output with short and wide trace. If different power source is used for VLDOIN, an input bypass capacitor should be placed as close as possible to the pin with short and wide trace. The output capacitor for VTT should be placed close to the pin with short and wide connection in order to avoid additional ESR and/or ESL of the trace. PD(MAX) = (TJ(MAX) − TA) / θJA The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal resistance, θJA. The derating curves in Figure 7 allow the designer to see the effect of rising ambient temperature on the maximum power dissipation. Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS8231A/B-06 February 2016 is a registered trademark of Richtek Technology Corporation. www.richtek.com 21 RT8231A/B It is strongly recommended to connect VTTSNS to the positive node of VTT output capacitor(s) as a separate trace from the high current power line to avoid additional ESR and/or ESL. If it is needed to sense the voltage of the point of the load, it is recommended to attach the output capacitor(s) at that point. It is also recommended to minimize any additional ESR and/or ESL of ground trace between the GND pin and the output capacitor(s). Current sense connections must always be made using Kelvin connections to ensure an accurate signal, with the current limit resistor located at the device. Power sections should connect directly to ground plane(s) using multiple vias as required for current handling (including the chip power ground connections). Power components should be placed as close to the IC as possible to minimize loops and reduce losses. Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 22 is a registered trademark of Richtek Technology Corporation. DS8231A/B-06 February 2016 RT8231A/B Outline Dimension 1 1 2 2 DETAIL A Pin #1 ID and Tie Bar Mark Options Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.150 0.250 0.006 0.010 D 2.900 3.100 0.114 0.122 D2 1.650 1.750 0.065 0.069 E 2.900 3.100 0.114 0.122 E2 1.650 1.750 0.065 0.069 e L 0.400 0.350 0.016 0.450 0.014 0.018 W-Type 20L QFN 3x3 Package Richtek Technology Corporation 14F, No. 8, Tai Yuen 1st Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. DS8231A/B-06 February 2016 www.richtek.com 23