DS7241A 00

®
RT7241A
12A, 23V, 500kHz, ACOTTM Synchronous Buck Converter
with VTT LDO for Memory Power Supply
General Description
The RT7241A provides complete protection features
including OCP, OVP, UVP, and thermal shutdown. The
RT7241A is available in the UQFN-18L 3x4 package.
The RT7241A provides a complete power supply for DDR3/
DDR3L/LPDDR3/DDR4 memory systems. It integrates an
Advanced Constant On-Time (ACOTTM) mode synchronous
Buck converter with a 1.5A sink/source tracking linear
regulator.
Applications
The PWM converter provides low quiescent supply
current, high efficiency, excellent transient response, and
high DC output accuracy needed for stepping down highvoltage batteries to generate low-voltage chipset RAM
supplies in notebook computers. The ACOTTM control
scheme handles wide input/output voltage ratios with ease
and provides a very fast response to load transients with
no external compensators.


DDR3/DDR3L/LPDDR3/DDR4 Memory Power Supplies
Notebook computers
Marking Information
00= : Product Code
YMDNN : Date Code
00=YM
DNN
The 1.5A sink/source VTT LDO maintains fast transient
response only requiring 10μF ceramic output capacitance.
The RT7241A supports all of the sleep state controls
placing VTT at high-Z in S3 and discharging VDDQ and
VTT in S4/S5.
Simplified Application Circuit
VIN
VIN
CIN
BOOT
RT7241A
PHASE
CB
L
VDDQ
VDD
VDD
CVDD
RPGOOD
PGOOD
PGOOD
S3
S5
R1
FB
S3
S5
GND
COUT
R2
PGND
VDDQ
VLDOIN
VTT
VTTSNS
VTTGND
CS
CVTT
VTT
RCS
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS7241A-00 January 2016
is a registered trademark of Richtek Technology Corporation.
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1
RT7241A





DDR3/DDR3L/LPDDR3/DDR4 Complete Solution
PWM Converter (VDDQ)
 100μ
μA Low Quiescent Supply Current at S3 Mode
TM
 ACOT
Mode Performs Fast Transient Response
 Support MLCC Output Capacitors
 Integrated Low On-Resistance MOSFETs
  17mΩ
Ω of High-Side MOSFET
  4.5mΩ
Ω of Low-Side MOSFET
 Adjustable from 0.6V to 1.5V Output Range for
1.5V (DDR3), 1.35V (DDR3L), 1.2V (LPDDR3) and 1.2V
(DDR4)
 4.5V to 23V Battery Input Range
 500kHz Switching Frequency
 Resistor Adjustable Valley Current Limit
 Over-/Under-Voltage Protection
 Internal Voltage Ramp Soft-Start
 Power Good Indicator
1.5A LDO (VTT)
 Capable to Sink and Source up to 1.5A
 LDO Input Available to Optimize Power Losses
 Require Only 10μ
μF Ceramic Output Capacitor
 Integrated Divider Tracks 1/2 VDDQ for VTT
 Accuracy ±20mV for VTT
 Support High-Z in S3 and Soft-Off in S4/S5
Tracking Mode Discharge Control
Thermal Capable Flip-chip (FC) Package for 12A
VDDQ Converter and 1.5A VTT LDO
RoHS Compliant and Halogen Free
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RT7241A
Package Type
QUF : UQFN-18L 3x4 (FC) (U-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Richtek products are :

RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.

Suitable for use in SnPb or Pb-free soldering processes.
Pin Configurations
(TOP VIEW)
S5
CS
FB
GND
VDD

Ordering Information
18 17 16 15 14
S3
BOOT
PHASE
PHASE
13
PGOOD
12
VIN
1
2
3
11
PGND
10
PGND
4
5
6
7
8
9
VDDQ
VLDOIN
VTT
VTTGND
VTTSNS
Features
UQFN-18L 3x4 (FC)
is a registered trademark of Richtek Technology Corporation.
DS7241A-00 January 2016
RT7241A
Function Pin Description
Pin No.
Pin Name
Pin Function
1
S3
VTT LDO Enable Control Input. Do not leave this pin floating.
2
BOOT
Bootstrap Supply for High-Side Gate Driver. A capacitor is needed to drive the
power switch's gate above the supply voltage. It is connected between the PHASE
and BOOT pins to form a floating supply across the power switch driver.
3, 4
PHASE
5
VDDQ
6
VLDOIN
Power Supply for the VTT LDO.
7
VTT
Power Output for the VTT LDO.
8
VTTGND
Power Ground for the VTT LDO.
9
VTTSNS
Voltage Sense Input for the VTT LDO. Connect to the terminal of the VTT LDO
output capacitor.
PGND
Power Ground for VDDQ.
12
VIN
Supply Input for VDDQ.
13
PGOOD
Open-Drain Power Good Indicator Output.
14
VDD
Analog Supply Input.
15
GND
Analog Ground.
16
FB
Feedback Voltage Input. Connect to a resistive voltage divider from VDDQ to GND
to adjust the output of PWM converter.
17
CS
Current Limit Threshold Setting Input. Connect to GND through the setting resistor.
18
S5
PWM Converter Enable Control Input. Do not leave this pin floating.
10, 11
Switch Node. External inductor connection for VDDQ.
Reference Input for the VTT LDO. An internal discharging circuit is connected to
this pin.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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3
RT7241A
Function Block Diagram
Buck Converter
VIN
BOOT
UVLO
4.2V
VDD
Internal
SST
S5
Thermal
Protection
PHASE
PWM Control
and Protect
Logic
PGND
PGOOD
0.6V
FB
Over Current
Protection
+
-
CS
GND
VTT LDO
VDDQ
Thermal
Shutdown
VLDOIN
-
S5
Control
Logic
+
S3
+
+
VTT
+
-
VTTSNS
VTTGND
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DS7241A-00 January 2016
RT7241A
Absolute Maximum Ratings













(Note 1)
VIN to PGND -------------------------------------------------------------------------------------------- −0.3V to 27V
SW to PGND -------------------------------------------------------------------------------------------- −0.3V to 27.3V
BOOT to PGND ----------------------------------------------------------------------------------------- −0.6V to 33.3V
S3,VDDQ,VLDOIN,VTT,VTTSNS,PGOOD,VDD,FB,CS,S5 to GND ------------------------ −0.3V to 6V
PGND to GND ------------------------------------------------------------------------------------------- −0.3V to 0.3V
PGND to VTTGND -------------------------------------------------------------------------------------- −0.3V to 0.3V
GND to VTTGND ---------------------------------------------------------------------------------------- −0.3V to 0.3V
Power Dissipation, PD @ TA = 25°C
UQFN-18L 3x4 (FC) ------------------------------------------------------------------------------------ 1.46W
Package Thermal Resistance (Note 2)
UQFN-18L 3x4 (FC), θJA ------------------------------------------------------------------------------ 68.2°C/W
UQFN-18L 3x4 (FC), θJC ------------------------------------------------------------------------------ 5.2°C/W
Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------ 260°C
Junction Temperature ---------------------------------------------------------------------------------- 150°C
Storage Temperature Range ------------------------------------------------------------------------- −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model) --------------------------------------------------------------------------- 2kV
Recommended Operating Conditions



(Note 3)
Supply Input Voltage, VIN ---------------------------------------------------------------------------- 4.5V to 23V
Junction Temperature Range ------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range ------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 12V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
80
100
130
A
--
1
--
A
Supply Current
IVLDOIN BIAS Current
FB forced above the regulation
point, VS5 = 2V, VS3 = 0V
VS5 = VS3 = 2V, VTT = No Load
IVLDOIN Standby Current
VS5 = 2V, VS3 = 0V, VTT = No Load
--
0.1
10
A
Shutdown Current
VS5 = VS3 = 0V
--
2.5
10
A
0.6
--
1.5
V
--
100
--
k
VS5 = 0V
--
15
--

RDS(ON)_H VBOOT  VPHASE = 5V
--
17
--
RDS(ON)_L
--
4.5
--
--
16
--
Quiescent Supply Current
PWM Converter
VDDQ Voltage Range
VDDQ Input Resistance
VDDQ Shutdown Discharge
Resistance
Switch On-Resistance
Switch On-Resistance
m
Current Limit
Current Limit
ILIM
Valley current of low-side switch,
RCS = 165k
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RT7241A
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Switching Frequency and Min. Off Timer
Switching Frequency
f SW
425
500
575
kHz
Minimum On Time
tON
--
60
--
ns
Minimum Off Time
tOFF
160
200
240
ns
112
117
122
%
--
5
--
s
60
70
80
%
--
2
--
s
0.594
0.6
0.606
V
VFB = 0.6V
1
0.1
1
A
From S5 high to 90% of VREF
0.5
1
1.5
ms
Logic-High
0.8
--
--
Logic-Low
--
--
0.4
Output Under-Voltage and Over-Voltage Protection
OVP Trip Threshold
VOVP
OVP Propagation Delay
TOVPDLY
UVP Trip Threshold
VUVP
UVP Propagation Delay
TUVPDLY
Measured at FB, with respect to
reference voltage
FB force above OVP threshold
Measured at FB, with respect to
reference voltage
FB force below UVP threshold
Reference and Soft-Start
FB Reference Voltage
VREF
FB Input Bias Current
Soft-Start Time
tSS
Enable and UVLO
S3, S5 Input
Voltage
V
VDD Input UVLO Threshold
Wake up
3.9
4.2
4.5
V
VDD Input UVLO Hysteresis
Shutdown
--
0.2
--
V
Measured at FB, with respect to
reference, no load
87
91
95
%
--
3
--
%
--
2.5
--
s
--
--
0.4
V
--
--
1
A
--
165
--
C
--
25
--
C
VDDQ = VLDOIN = 1.2V / 1.35V /
1.5V / 1.8V, |IVTT| = 0A
20
--
20
VDDQ = VLDOIN = 1.2V / 1.35V /
1.5V / 1.8V, |IVTT| = 1A
30
--
30
VDDQ = VLDOIN = 1.2V / 1.35V,
|IVTT| = 1.2A
40
--
40
VDDQ = VLDOIN = 1.5V / 1.8V,
|IVTT| = 1.5A
40
--
40
Power Good
Trip Threshold (Raising)
Trip Threshold (Hysteresis)
Falling edge, FB forced below
PGOOD trip threshold
ISINK = 1mA
Fault Propagation Delay
Output Low Voltage
Leakage Current
ILEAK
High state, forced to 5V
Thermal Shutdown
Thermal Shutdown
TSD
Thermal Shutdown Hysteresis TSD
VTT LDO
VTT Output Tolerance
VVTTTOL
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mV
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RT7241A
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VTT Source Current Limit
IVTTOCLSRC VTT = 0V
1.6
2.6
3.6
A
VTT Sink Current Limit
IVTTOCLSNK VTT = VDDQ
1.6
2.6
3.6
A
VTT Leakage Current
IVTTLK
V

S5 = 5V, S3 = 0V, VTT =  VDDQ 
2


10
--
10
A
VTTSNS Leakage Current
IVTTSNSLK
ISINK = 1mA
1
--
1
A
VTT Discharge Resistance
RDSCHRG
S5 = S3 = 0V
--
6
--

Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS7241A-00 January 2016
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7
RT7241A
Typical Application Circuit
12 VIN
CIN
4.7µF x 2
VIN
14
VDD
CVDD
1µF
VDD
RPGOOD
100k
13
PGOOD
S3
S5
RCS
165k
PGOOD
1 S3
18
S5
17
CS
15
GND
RBOOT
(Optional)
2.2
BOOT 2
RT7241A
PHASE
3, 4
CBOOT
0.1µF
L
0.56µH
CFF
100pF
FB 16
10, 11
PGND
VDDQ
VLDOIN
R1
14.3k
R2
12k
5
VDDQ
1.35V
CVDDQ
22µF x 5
6
VTT 7
VTTSNS 9
8
VTTGND
CVTT
10µF
VTT
Figure 1. Typical Application Circuit for VOUT = 1.35V
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RT7241A
Typical Operating Characteristics
Performace waveforms are tested on the evaluation board of the Typical Application Circuit, VIN = 12V, VOUT = 1.35V, L = 0.56˜H, TJ = 25°C,
unless otherwise noted.
Efficiency vs. Load Current
Switching Frequency vs. Load Current
550
95
540
90
Efficiency (%)
85
80
VIN = 7.4V
VIN = 12V
VIN = 19V
75
70
65
60
VDDQ = 1.35V, VDD = 5V, fSW = 500kHz,
L = 0.56μH, DCR = 1.8mΩ
55
50
0.001
0.010
0.100
1.000
10.000
Switching Frequency (kHz)1
100
530
520
510
500
VIN = 7.4V
VIN = 12V
VIN = 19V
490
480
470
460
VDDQ = 1.35V, VDD = 5V, S5 = 5V
450
100.000
2
3
4
5
6
Load Current (A)
7
8
9
10
11
12
Load Current (A)
Quiescent Current vs. VDD Input Voltage
Shutdown Current vs. VDD Input Voltage
10
125
Shutdown Current (μA)1
Quiescent Current (μA)
9
123
120
118
115
113
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
7
6
5
4
3
2
1
VIN = 12V, S5 = 5V, S3 = GND, No Switching
110
8
VIN = 12V, S5 = 5V, S3 = GND
0
4.5
5.5
VDD Input Voltage (V)
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
VDD Input Voltage (V)
VTT Output Voltage vs. Load Current
VDDQ Output Voltage vs. Load Current
0.705
1.40
1.39
1.38
Output Voltage (V)
Output Voltage (V)
0.695
0.685
0.675
0.665
1.37
1.36
1.35
1.34
1.33
1.32
0.655
VIN = 12V, VDDQ = 1.35V, VDD = 5V
0.645
-1.5
-1
-0.5
0
0.5
1
Load Current (A)
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DS7241A-00 January 2016
1.5
1.31
1.30
0.00
VIN = 12V, VDDQ = 1.35V, VDD = 5V
0.01
0.10
1.00
10.00
Load Current (A)
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RT7241A
VDDQ Power On by S5
VDDQ Power On by S5
VDDQ
(400mV/Div)
VDDQ
(400mV/Div)
S5
(5V/Div)
S5
(5V/Div)
PGOOD
(5V/Div)
IL
(2A/Div)
PGOOD
(5V/Div)
IL
(10A/Div)
VIN = 12V, No Load
Time (200μs/Div)
Time (200μs/Div)
VDDQ Power On by VDD
VDDQ Power On by VDD
VDDQ
(400mV/Div)
VDDQ
(400mV/Div)
VDD
(5V/Div)
VDD
(5V/Div)
PGOOD
(5V/Div)
IL
(2A/Div)
PGOOD
(5V/Div)
IL
(10A/Div)
VIN = 12V, No Load, VDD Hot Plug
VIN = 12V, ILOAD = 12A, VDD Hot Plug
Time (200μs/Div)
Time (200μs/Div)
VDDQ Power Off by S5
VDDQ Power Off by S5
VDDQ
(400mV/Div)
VDDQ
(400mV/Div)
S5
(5V/Div)
S5
(5V/Div)
PGOOD
(5V/Div)
IL
(1A/Div)
PGOOD
(5V/Div)
IL
(10A/Div)
VIN = 12V, No Load
Time (2ms/Div)
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VIN = 12V, ILOAD = 12A
VIN = 12V, ILOAD = 12A
Time (10μs/Div)
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DS7241A-00 January 2016
RT7241A
VDDQ Power Off by VDD
VDDQ Power Off by VDD
VDDQ
(400mV/Div)
VDDQ
(400mV/Div)
VDD
(5V/Div)
VDD
(5V/Div)
PGOOD
(5V/Div)
IL
(1A/Div)
PGOOD
(5V/Div)
IL
(10A/Div)
VIN = 12V, No Load
VIN = 12V, ILOAD = 12A
Time (10ms/Div)
Time (10μs/Div)
VTT Power On by S3
VTT Power Off by S3
VDDQ
(400mV/Div)
VTT
(400mV/Div)
VDDQ
(400mV/Div)
VTT
(400mV/Div)
S3
(5V/Div)
S3
(5V/Div)
IL
(2A/Div)
IL
(2A/Div)
VIN = 12V, No Load
VIN = 12V, No Load
Time (10μs/Div)
Time (20ms/Div)
VTT Power On by S5
VTT Power Off by S5
VDDQ
(400mV/Div)
VTT
(400mV/Div)
VDDQ
(400mV/Div)
VTT
(400mV/Div)
S5
(5V/Div)
S5
(5V/Div)
IL
(2A/Div)
IL
(2A/Div)
VIN = 12V, No Load
Time (200μs/Div)
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DS7241A-00 January 2016
VIN = 12V, No Load
Time (1ms/Div)
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RT7241A
UVP
VDDQ Load Transient
VDDQ
(1V/Div)
VDDQ
(50mV/Div)
SW
(10V/Div)
PGOOD
(5V/Div)
IL
(5A/Div)
VIN = 12V, ILOAD = 1.2A to 12A @ 2.5A/μs
Time (100μs/Div)
IL
(10A/Div)
VIN = 12V, Pulse Load
Time (20μs/Div)
OVP
VDDQ
(1V/Div)
VIN
(10V/Div)
PGOOD
(5V/Div)
IL
(5A/Div)
VIN = 12V, VDDQ = 1.56V, No Load
Time (10ms/Div)
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RT7241A
Application Information
The RT7241A is high-performance 500kHz 12A step-down
regulators with internal power switches and synchronous
rectifiers. It features an Advanced Constant On-Time
(ACOT TM) control architecture that provides stable
operation for ceramic output capacitors without
complicated external compensation, among other benefits.
The input voltage range is from 4.5V to 23V. The output
voltage is adjustable from 0.6V to 1.5V.
The proprietary ACOT TM control scheme improves
conventional constant on-time architectures, achieving
nearly constant switching frequency over line, load, and
output voltage ranges. Since there is no internal clock,
response to transients is nearly instantaneous and inductor
current can ramp quickly to maintain output regulation
without large bulk output capacitance.
The 1.5A sink/source VTT LDO maintains fast transient
response, only requiring 10μF of ceramic output
capacitance. The RT7241A supports all of the sleep state
controls, placing VTT at high-Z in S3 and discharging
VDDQ, VTT and VTTREF (soft-off) in S4/S5.
ACOTTM Control Architecture
Making the on-time proportional to VOUT and inversely
proportional to VIN is not sufficient to achieve good
constant-frequency behavior for several reasons. First,
voltage drops across the MOSFET switches and inductor
cause the effective input voltage to be less than the
measured input voltage and the effective output voltage to
be greater than the measured output voltage as sensing
input and output voltage from LX pin. When the load
change, the switch voltage drops change causing a
switching frequency variation with load current. Also, at
light loads if the inductor current goes negative, the switch
dead-time between the synchronous rectifier turn-off and
the high-side switch turn-on allows the switching node to
rise to the input voltage. This increases the effective ontime and causes the switching frequency to drop
noticeably.
One way to reduce these effects is to measure the actual
switching frequency and compare it to the desired range.
This has the added benefit eliminating the need to sense
the actual output voltage, potentially saving one pin
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DS7241A-00 January 2016
connection. ACOTTM uses this method, measuring the
actual switching frequency and modifying the on-time with
a feedback loop to keep the average switching frequency
in the desired range.
In order to achieve good stability with low-ESR ceramic
capacitors, ACOTTM uses a virtual inductor current ramp
generated inside the IC. This internal ramp signal replaces
the ESR ramp normally provided by the output capacitor’s
ESR. The ramp signal and other internal compensations
are optimized for low-ESR ceramic output capacitors.
ACOTTM One-shot Operation
The RT7241A control algorithm is simple to understand.
The feedback voltage, with the virtual inductor current ramp
added, is compared to the reference voltage. When the
combined signal is less than the reference, the on-time
one-shot is triggered, as long as the minimum off-time
one-shot is clear and the measured inductor current
(through the synchronous rectifier) is below the current
limit. The on-time one-shot turns on the high-side switch
and the inductor current ramps up linearly. After the ontime, the high-side switch is turned off and the synchronous
rectifier is turned on and the inductor current ramps down
linearly. At the same time, the minimum off-time one-shot
is triggered to prevent another immediate on-time during
the noisy switching time and allow the feedback voltage
and current sense signals to settle. The minimum off-time
is kept short (200ns typical) so that rapidly-repeated ontimes can raise the inductor current quickly when needed.
Diode Emulation Mode
In diode emulation mode, the RT7241A automatically
reduces switching frequency at light load conditions to
maintain high efficiency. This reduction of frequency is
achieved smoothly. As the output current decreases from
heavy load condition, the inductor current is also reduced,
and eventually comes to the point that its current valley
touches zero, which is the boundary between continuous
conduction and discontinuous conduction modes. To
emulate the behavior of diodes, the low-side MOSFET
allows only partial negative current to flow when the
inductor free wheeling current becomes negative. As the
load current is further decreased, it takes longer and longer
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RT7241A
time to discharge the output capacitor to the level that
requires the next “ON” cycle. In reverse, when the output
current increases from light load to heavy load, the
switching frequency increases to the preset value as the
inductor current reaches the continuous conduction. The
transition load point to the light load operation is shown in
Figure 2. and can be calculated as follows :
IL
Slpoe = (VIN - VOUT) / L
IPEAK
VTT Linear Regulator
The RT7241A integrates a high performance low dropout
linear regulator that is capable of sourcing and sinking
currents up to 1.5A. This VTT linear regulator employs
ultimate fast response feedback loop so that small ceramic
capacitors are enough for keeping track of VDDQ/2 within
40mV at all conditions, including fast load transient. To
achieve tight regulation with minimum effect of wiring
resistance, a remote sensing terminal, VTTSNS, should
be connected to the positive node of the VTT output
capacitor(s) as a separate trace from the VTT pin. For
stable operation, total capacitance of the VTT output
terminal can be equal to or greater than 10μF.
ILOAD = IPEAK / 2
Current Limit Setting for VDDQ (CS)
The RT7241A current limit is adjustable by CS pin and it
tON
t
Figure 2. Boundary Condition of CCM/DEM
ILOAD 
(VIN  VOUT )
 tON
2L
where tON is the on-time.
The switching waveforms may appear noisy and
asynchronous when light load causes diode emulation
operation. This is normal and results in high efficiency.
Trade offs in DEM noise vs. light load efficiency is made
by varying the inductor value. Generally, low inductor values
produce a broader efficiency vs. load curve, while higher
values result in higher full load efficiency (assuming that
the coil resistance remains fixed) and less output voltage
ripple. Penalties for using higher inductor values include
larger physical size and degraded load transient response
(especially at low input voltage levels).
During discontinuous switching, the on-time is immediately
increased to add “hysteresis” to discourage the IC from
switching back to continuous switching unless the load
increases substantially. The IC returns to continuous
switching as soon as an on-time is generated before the
inductor current reaches zero. The on-time is reduced back
to the length needed for 500kHz switching and encouraging
the circuit to remain in continuous conduction, preventing
repetitive mode transitions between continuous switching
and discontinuous switching.
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14
is a cycle-by-cycle “valley” type, measuring the inductor
current through the synchronous rectifier during the offtime while the inductor current ramps down. The current
is determined by measuring the voltage between source
and drain of the synchronous rectifier, adding temperature
compensation for greater accuracy. If the current exceeds
the current limit, the on-time one-shot is inhibited until
the inductor current ramps down below the current limit.
Thus, only when the inductor current is well below the
current limit, another on-time is permitted. If the output
current exceeds the available inductor current (controlled
by the current limit mechanism), the output voltage will
drop. If it drops below the output under-voltage protection
level (see next section) the IC will stop switching to avoid
excessive heat.
The RT7241A also includes a negative current limit to
protect the IC against sinking excessive current and
possibly damaging the IC. If the voltage across the
synchronous rectifier indicates the negative current is too
high, the synchronous rectifier turns off until after the next
high side on-time.
The RT7241A provides adjustable OCP setting via change
the RCS to decide the current limit. The current limit can
be derived by the following equation :
ILIM = 2.64 x 106/RCS
The default setting of RCS is 165kΩ, which means current
limit is 16A. The maximum current limit should be lower
than 20A.
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RT7241A
Output Over-voltage Protection and Under-voltage
Protection for VDDQ
The RT7241A includes output over-voltage protection
(OVP). If the output voltage rises above the regulation
level, the high-side switch naturally remains off and the
synchronous rectifier will periodically turn on until the
inductor current reaches the negative current limit or undervoltage protection is triggered. If the output voltage
exceeds the OVP trip threshold for longer than 5μs
(typical), the IC's OVP is triggered. The RT7241A also
includes output under-voltage protection (UVP). If the
output voltage drops below the UVP trip threshold for longer
than 2μs (typical) the IC's UVP is triggered. The RT7241A
uses latch-off mode OVP and UVP. When the protection
function is triggered, the IC will shut down. The IC stops
switching and is latched off. To restart operation, toggle
S5 or power the IC off by VDD and then on again.
Current Protection for VTT
Output Management by S3, S5 Control
In DDR2/DDR3 memory applications, it is important to
always keep VDDQ higher than VTT/VTTREF, even during
start-up and shutdown. The RT7241A provides this
management by simply connecting both S3 and S5
terminals to the sleep-mode signals such as SLP_S3 and
SLP_S5 in notebook PC system. All VDDQ and VTT are
turned on at S0 state (S3 = S5 = high). In S3 state (S3 =
low, S5 = high), VDDQ is kept on while VTT is turned off
and left at high impedance (high-Z) state. The VTT output
is floated and does not sink or source current in this state.
In S4/S5 states (S3 = S5 = low), all of the two outputs
are disabled and discharged to ground. The code of each
state represents the following: S0 = full ON, S3 = suspend
to RAM (STR), S4 = suspend to disk (STD), S5 = soft
OFF. (See Table 1)
Table 1. S3 and S5 Truth Table
STATE
S3
S5
VDDQ
VTT
S0
Hi
Hi
On
On
S3
Lo
Hi
On
Off(Hi-Z)
S4/S5
Lo
Lo
Off
(Discharge)
Off
(Discharge)
The LDO has an internally fixed constant over current limit
of 2.6A while operating at normal condition.
VDD Under Voltage Lockout (UVLO)
In addition to the enable function, the RT7241A features
an UVLO function that monitors the VDD voltage. To
prevent operation without fully-enhanced internal MOSFET
switches, this function inhibits switching when VDD
voltage drops below the UVLO-falling threshold.
The IC resumes switching when VDD voltage exceeds
the UVLO-rising threshold.
Over Temperature Protection
The RT7241A includes an over temperature protection
(OTP) circuitry to prevent overheating due to excessive
power dissipation. The OTP will shut down switching
operation when the junction temperature exceeds 165°C.
Once the junction temperature cools down by
approximately 25°C the IC will resume normal operation
with a complete soft-start. For continuous operation,
provide adequate cooling so that the junction temperature
does not exceed 165°C.
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VDDQ and VTT Tracking Discharge Mode
The RT7241A discharges VDDQ and VTT outputs when
S5 is low or in the S4/S5 state. In tracking discharge
mode, the RT7241A discharges outputs through the
internal switch and VTT output tracks half of the VDDQ
voltage during this discharge. Note that if VLDOIN is
supplied by external volatge source, an input decoupling
capacitor about 10μF is needed at the input.
The VTT LDO can handle up to 1.5A for both source/sink,
and discharge with high-Z in S3.
Soft-Start
The RT7241A provides an internal soft-start function to
prevent large inrush current and output voltage overshoot
when the converter starts up. The soft-start (SS)
automatically begins once the chip is enabled. During softstart, it clamps the ramping of internal reference voltage
which is compared with FB signal. The typical soft-start
duration is 1ms.
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RT7241A
Power Good Output (PGOOD)
The power good output is an open drain output that requires
a pull-up resistor. When the output voltage is 20% (typical)
below its set voltage, PGOOD will be pulled low. It is held
low until the output voltage returns to 93% of its set voltage
once more. During soft-start, PGOOD is actively held low
and only allowed to be pulled high after soft-start is over
and the output reaches 93% of its set voltage. There is a
2.5μs delay built into PGOOD circuitry to prevent false
transition.
External Bootstrap Capacitor (CBOOT)
Connect a 0.1μF low ESR ceramic capacitor between
BOOT pin and LX pin. This bootstrap capacitor provides
the gate driver supply voltage for the high side N-channel
MOSFET switch.
The internal power MOSFET switch gate driver is
optimized to turn the switch on fast enough for low power
loss and good efficiency, but also slow enough to reduce
EMI. Switch turn-on is when most EMI occurs since VSW
rises rapidly. During switch turn-off, SW is discharged
relatively slowly by the inductor current during the deadtime between high-side and low-side switch on-times. In
some cases it is desirable to reduce EMI further, at the
expense of some additional power dissipation. The switch
turn-on can be slowed by placing a small (<10Ω)
resistance between BOOT and the external bootstrap
capacitor. This will slow the high-side switch turn-on and
VSW's rise.
Setting the Output Voltage
The output voltage of RT7241A is adjustable and with valley
control. There is an easy way to determine the output
voltage only by two resistors, R1 and R2. As the feedback
circuit shown in Figure 3, the relation of VOUT and VREF
can be derived as VOUT = (1+R1/R2) x VREF readily.
Generally, the stability is a serious issue for converter. In
order to achieve better performance on stability and
transient, a feed-forward capacitor, CFF, is added to
increase the noise margin and transient response of loop
control. However, there is a tradeoff of adding a feed-forward
capacitor. An additional dc offset will be generated on
output voltage due to the amplified feedback ripple by feedforward compensator. This is not always the case that
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every CFF makes the same value of dc offset, it is based
on different pole and zero placement generated by R1, R2
and C FF. For simplicity, a symbol named Vdc,offset is
supposed to be the value of dc offset. This value may
influence the performance (e.g. regulation or peak value
of VOUT) of converter slightly, the suggested CFF is to select
a pair of pole and zero to provide the maximum phase
lead at switching frequency.
VOUT,valley =  1 + R1   VREF + Vdc,offset
R2 

VOUT,valley is the valley of output voltage, and Vdc,offset is
used for describing the additional dc offset on VOUT, the
value is related to the output voltage ripple and CFF.
VOUT
R1
CFF (opt.)
FB
RT7241A
R2
GND
Figure 3. The Equivalent Circuit of Feedback Loop
Inductor Selection
Selecting an inductor involves specifying its inductance
and also its required peak current. The exact inductor value
is generally flexible and is ultimately chosen to obtain the
best mix of cost, physical size, and circuit efficiency.
Lower inductor values benefit from reduced size and cost
and they can improve the circuit’s transient response,
but they increase the inductor ripple current and output
voltage ripple and reduce the efficiency due to the resulting
higher peak currents. Conversely, higher inductor values
increase efficiency, but the inductor will either be physically
larger or have higher resistance since more turns of wire
are required and transient response will be slower since
more time is required to change current (up or down) in
the inductor. A good compromise between size, efficiency,
and transient response is to use a ripple current (ΔIL) about
20-50% of the desired full output load current. Calculate
the approximate inductor value by selecting the input and
output voltages, the switching frequency (f SW), the
maximum output current (IOUT(MAX)) and estimating a ΔIL
as some percentage of that current.
V
 (VIN  VOUT )
L  OUT
VIN  fSW  IL
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RT7241A
Once an inductor value is chosen, the ripple current (ΔIL)
is calculated to determine the required peak inductor
current.
V
 (VIN  VOUT )
I
IL  OUT
and IL(PEAK)  IOUT(MAX)  L
VIN  fSW  L
2
To guarantee the required output current, the inductor
needs a saturation current rating and a thermal rating that
exceeds IL(PEAK). These are minimum requirements. To
maintain control of inductor current in overload and shortcircuit conditions, some applications may desire current
ratings up to the current limit value. However, the IC's
output under-voltage shutdown feature make this
unnecessary for most applications.
For best efficiency, choose an inductor with a low DC
resistance that meets the cost and size requirements.
For low inductor core losses some type of ferrite core is
usually best and a shielded core type, although possibly
larger or more expensive, will probably give fewer EMI
and other noise problems.
Input Capacitor Selection
High quality ceramic input decoupling capacitor, such as
X5R or X7R, with values greater than 20μF are
recommended for the input capacitor. The X5R and X7R
ceramic capacitors are usually selected for power regulator
capacitors because the dielectric material has less
capacitance variation and more temperature stability.
Voltage rating and current rating are the key parameters
when selecting an input capacitor. Generally, selecting an
input capacitor with voltage rating 1.5times greater than
the maximum input voltage is a conservatively safe design.
The input capacitor is used to supply the input RMS
current, which can be approximately calculated using the
following equation :
IRMS 
VOUT 
V
I 2 
 (1 OUT )  IOUT 2  L 
VIN 
VIN
12 
The next step is to select a proper capacitor for RMS
current rating. One good design uses more than one
capacitor with low Equivalent Series Resistance (ESR) in
parallel to form a capacitor bank. The input capacitance
value determines the input ripple voltage of the regulator.
The input voltage ripple can be approximately calculated
using the following equation :
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VIN 
IOUT  VIN
V
 (1  OUT )
CIN  fSW  VOUT
VIN
The typical operating circuit is recommended to use two
10μF and low ESR ceramic capacitors on the input.
Output Capacitor Selection
The RT7241A is optimized for ceramic output capacitors
and best performance will be obtained using them. The
total output capacitance value is usually determined by
the desired output voltage ripple level and transient response
requirements for sag (undershoot on positive load steps)
and soar (overshoot on negative load steps).
Output ripple at the switching frequency is caused by the
inductor current ripple and its effect on the output
capacitor's ESR and stored charge. These two ripple
components are called ESR ripple and capacitive ripple.
Since ceramic capacitors have extremely low ESR and
relatively little capacitance, both components are similar
in amplitude and both should be considered if ripple is
critical.
VRIPPLE  VRIPPLE(ESR)  VRIPPLE(C)
VRIPPLE(ESR)  IL  RESR
VRIPPLE(C) 
IL
8  COUT  fSW
In addition to voltage ripple at the switching frequency,
the output capacitor and its ESR also affect the voltage
sag (undershoot) and soar (overshoot) when the load steps
up and down abruptly. The ACOT transient response is
very quick and output transients are usually small.
However, the combination of small ceramic output
capacitors (with little capacitance), low output voltages
(with little stored charge in the output capacitors), and
low duty cycle applications (which require high inductance
to get reasonable ripple currents with high input voltages)
increases the size of voltage variations in response to
very quick load changes. Typically, load changes occur
slowly with respect to the IC's 500kHz switching frequency.
But some modern digital loads can exhibit nearly
instantaneous load changes and the following section
shows how to calculate the worst-case voltage swings in
response to very fast load steps.
The amplitude of the ESR step up or down is a function of
the load step and the ESR of the output capacitor :
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RT7241A
VESR_STEP  IOUT  RESR
Thermal Considerations
The amplitude of the capacitive sag is a function of the
load step, the output capacitor value, the inductor value,
the input-to-output voltage differential, and the maximum
duty cycle. The maximum duty cycle during a fast transient
is a function of the on-time and the minimum off-time since
the ACOTTM control scheme will ramp the current using
on-times spaced apart with minimum off-times, which is
as fast as allowed. Calculate the approximate on-time
(neglecting parasitics) and maximum duty cycle for a given
input and output voltage as :
VOUT
tON
tON 
and DMAX 
VIN  fSW
tON + tOFF(MIN)
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
The actual on-time will be slightly longer as the IC
compensates for voltage drops in the circuit, but we can
neglect both of these since the on-time increase
compensates for the voltage losses. Calculate the output
voltage sag as :
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
UQFN-18L 3x4 (FC) package, the thermal resistance, θJA,
L  ( IOUT )2
2  COUT  ( VIN(MIN)  DMAX  VOUT )
The amplitude of the capacitive soar is a function of the
load step, the output capacitor value, the inductor value
and the output voltage :
VSOAR 
2
L  (IOUT )
2  COUT  VOUT
Most applications never experience instantaneous full load
steps and the RT7241A's high switching frequency and
fast transient response can easily control voltage regulation
at all times. Therefore, sag and soar are seldom an issue
except in very low-voltage CPU core or DDR memory
supply applications, particularly for devices with high clock
frequencies and quick changes into and out of sleep
modes. In such applications, simply increasing the amount
of ceramic output capacitor (sag and soar are directly
proportional to capacitance) or adding extra bulk
capacitance can easily eliminate any excessive voltage
transients.
In any application with large quick transients, it should
calculate soar and sag to make sure that over-voltage
protection and under-voltage protection will not be triggered.
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18
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
is 68.2°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by the following formula :
PD(MAX) = (125°C − 25°C) / (68.2°C/W) = 1.46W for
UQFN-18L 3x4 (FC) package
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curve in Figure 4 allows the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
2.0
Maximum Power Dissipation (W)1
VSAG 
PD(MAX) = (TJ(MAX) − TA) / θJA
Four-Layer PCB
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 4. Derating Curve of Maximum Power Dissipation
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RT7241A
Layout Considerations
Layout is very important in high frequency switching
converter design. The PCB can radiate excessive noise
and contribute to converter instability with improper layout.
Certain points must be considered before starting a layout
using the RT7241A.

Make the traces of the main current paths as short and
wide as possible. Put the input capacitor as close as
possible to the device pins (VIN and GND).

Keep current limit setting network as close as possible
to the IC. Routing of the network should avoid coupling
to high voltage switching node.

Phase node encounters high frequency voltage swings
so it should be kept in a small area. Keep sensitive
components away from the phase node to prevent stray
as possible.

VLDOIN should be connected to VDDQ output with short
and wide trace. If different power source is used for
VLDOIN, an input bypass capacitor should be placed as
close as possible to the pin with short and wide trace.

The output capacitor for VTT should be placed close to
the pin with short and wide connection in order to avoid
additional ESR and/or ESL of the trace.

It is strongly recommended to connect VTTSNS to the
positive node of VTT output capacitor(s) as a separate
trace from the high current power line to avoid additional
ESR and/or ESL. If it is needed to sense the voltage of
the point of the load, it is recommended to attach the
output capacitor(s) at that point. It is also recommended
to minimize any additional ESR and/or ESL of ground
trace between the GND pin and the output capacitor(s).

The GND pin should be connected to a strong ground
plane for heat sinking and noise protection.

Avoid using vias in the power path connections that have
switched currents (from CIN to GND and CIN to VIN) and
the switching node (Phase).

An example of PCB layout guide is shown in Figure 5
for reference.
CFF
The voltage divider must be
connected as close to the chip
as possible
PGND
RCS
PGND
CS
FB
GND
VDD
R2
S5
Phase should be
connected to inductor
by wide and short trace.
Keep sensitive
components away from
this trace.
VDDQ
R1
18
17
16
15
14
CVDD
13
PGOOD
The input capacitor
must be placed near
the chip
PGND
COUT
S3
1
BOOT
2
PHASE
3
12
VIN
CBOOT
CIN
L
7
VTT
8
9
VTTSNS
VDDQ
6
VTTGND
5
VDDQ
11
PGND
10
PGND
4
VTT
PHASE
VLDOIN
The output capacitor
must be placed near
the chip
PGND
CVTT
Figure 5. PCB Layout Guide
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19
RT7241A
Outline Dimension
Symbol
A
A1
A3
D
E
b
b1
b2
b3
L
L1
L2
L3
L4
e
K
K1
K2
K3
K4
K5
K6
K7
H
Dimensions In Millimeters
Min.
0.500
0.000
0.100
2.900
3.900
0.150
0.350
0.150
0.200
0.325
1.390
0.300
1.950
0.420
Max.
0.600
0.050
0.175
3.100
4.100
0.250
0.450
0.250
0.300
0.425
1.490
0.400
2.050
0.520
Dimensions In Inches
Min.
0.020
0.000
0.004
0.114
0.154
0.006
0.014
0.006
0.008
0.013
0.055
0.012
0.077
0.017
0.450
0.490
1.370
2.215
2.965
1.060
1.510
1.935
2.685
0.150
Max.
0.024
0.002
0.007
0.122
0.161
0.010
0.018
0.010
0.012
0.017
0.059
0.016
0.081
0.020
0.018
0.019
0.054
0.087
0.117
0.042
0.059
0.076
0.106
0.006
U-Type 18L QFN 3x4 (FC) Package
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is a registered trademark of Richtek Technology Corporation.
DS7241A-00 January 2016
RT7241A
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
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