ONSEMI NTJD5121NT2G

NTJD5121N
Power MOSFET
60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88
Features
•
•
•
•
•
Low RDS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
This is a Pb−Free Device
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V(BR)DSS
RDS(on) MAX
ID Max
1.6 W @ 10 V
60 V
295 mA
2.5 W @ 4.5 V
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
SC−88 (SOT−363)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Symbol
Value
Unit
VDSS
60
V
VGS
±20
V
ID
295
mA
Steady
State
TA = 25°C
TA = 85°C
212
t≤5s
TA = 25°C
304
TA = 85°C
219
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain Current
−55 to
150
°C
Source Current (Body Diode)
IS
210
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Gate−Source ESD Rating (HBM)
ESDHBM
2000
V
Gate−Source ESD Rating (MM)
ESDMM
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Symbol
Value
Unit
Junction−to−Ambient – Steady State
RqJA
500
°C/W
Junction−to−Ambient – t ≤ 5 s
RqJA
470
2
5
G2
D2
3
4
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
6
1
SC−88/SOT−363
CASE 419B
STYLE 26
TF
M
G
TF M G
G
1
S1 G1 D2
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTJD5121NT1G
SC−88
(Pb−Free)
3000 / Tape & Reel
NTJD5121NT2G
SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
October, 2013 − Rev. 6
G1
D1 G2 S2
TJ, TSTG
© Semiconductor Components Industries, LLC, 2013
D1
266
mA
Parameter
6
mW
250
900
Operating Junction and Storage Temperature
1
Top View
IDM
tp = 10 ms
S1
1
Publication Order Number:
NTJD5121N/D
NTJD5121N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 60 V
V
92
mV/°C
TJ = 25°C
1.0
TJ = 125°C
500
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±10
mA
2.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
Gate Resistance
RG
1.0
1.7
4.0
mV/°C
VGS = 10 V, ID = 500 mA
1.0
1.6
VGS = 4.5 V, ID = 200 mA
1.2
2.5
VDS = 5 V, ID = 200 mA
80
S
536
W
26
pF
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
4.4
2.5
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.28
td(on)
22
nC
0.9
VGS = 4.5 V, VDS = 25 V,
ID = 200 mA
0.2
0.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDD = 25 V,
ID = 200 mA, RG = 25 W
tf
ns
34
34
32
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
0.8
TJ = 85°C
0.7
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
1.2
V
NTJD5121N
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
1.6
3.8 V
2.4 V
0.8
ID, DRAIN CURRENT (A)
4V
4.2 V
3.6 V
3.4 V
2.2 V
3.2 V
3V
2.8 V
2.6 V
0.4
1
2
3
4
5
TJ = 85°C
TJ = 25°C
TJ = −55°C
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
0
1
−55°C
2
3
4
5
2.4
VGS = 10 V
2
TJ = 125°C
1.6
TJ = 85°C
1.2
TJ = 25°C
0.8
TJ = −55°C
0.4
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.4
1.8
ID = 500 mA
2
1.6
4.5 V
1.2
0.8
TJ = 125°C
Figure 2. Transfer Characteristics
TJ = 125°C
1.2
25°C
0.2
Figure 1. On−Region Characteristics
VGS = 4.5 V
1.6
0.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.4
2
0.6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.8
0
ID = 200 mA
2
4
6
8
10 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
1
4.5 V
1.2
0
1.2
TJ = 25°C
VGS = 10
5V
10
ID = 0.2 A
VGS = 4.5 V and 10 V
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125 150
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance versus
Gate−to−Source Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
NTJD5121N
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
VGS, GATE−TO−SOURCE VOLTAGE (V)
40
30
Ciss
20
Coss
10
Crss
0
0
4
8
12
16
20
5
ID = 0.2 A
TJ = 25°C
VDD = 25 V
4
3
2
1
0
0
0.2
DRAIN−TO−SOURCE VOLTAGE (V)
0.4
VGS = 0 V
0.1
TJ = 85°C
TJ = 25°C
0.4
0.8
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
0.01
0.6
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
0.6
0.8
1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1.2
1
NTJD5121N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
6
5
GAGE
PLANE
4
2
L
L2
E1
E
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
H
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
ddd
TOP VIEW
M
A2
A
6X
ccc C
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
A1
SIDE VIEW
C
C A-B D
DETAIL A
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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For additional information, please contact your local
Sales Representative
NTJD5121N/D