Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00227 Wafer Process: SiGe HBT-A HMC334 HMC426 HMC469 HMC471 HMC474 HMC474 HMC476 HMC476 HMC478 HMC478 HMC478 HMC479 HMC479 HMC481 HMC481 HMC482 HMC495 HMC496 HMC497 HMC548 HMC548 HMC597 Rev: 03 QTR: 2013- 00227 Wafer Process: SiGe HBT-A Rev: 03 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the SIGE HBT-A process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108D. 2. Operating Junction Temp (T oj ): Temperature of the die active circuitry during typical operation. 3. Stress Junction Temp (T sj ): Temperature of the die active circuitry during stress testing. Rev: 03 QTR: 2013- 00227 Wafer Process: SiGe HBT-A Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC481 Qualification (QTR2004-00007) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 96 96 Complete HTOL, 1000 hours 96 96 Complete Post Electrical Test 96 96 Pass QTY IN QTY OUT PASS/FAIL Initial Electrical 81 81 Complete HTOL, 1000 hours 81 81 Complete Post Electrical Test 81 81 Pass NOTES HMC2169 Qualification (QTR2013-00339) TEST NOTES Rev: 03 QTR: 2013- 00227 Wafer Process: SiGe HBT-A HMC2170 Qualification (QTR2013-00339) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 81 81 Complete HTOL, 1000 hours 81 81 Complete Post Electrical Test 81 81 Pass NOTES HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 6 6 Complete HTOL, 5039 hours 6 6 Complete Post HTOL Electrical Test 6 6 Pass NOTES HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 14 14 Complete HTOL, 2000 hours 14 14 Complete Post HTOL Electrical Test 14 14 Pass NOTES Rev: 03 QTR: 2013- 00227 Wafer Process: SiGe HBT-A HMC597 (QTR2013-00360) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 318 318 Complete HTOL, 1000 hours 318 318 Complete Post HTOL Electrical Test 318 318 Pass NOTES QTR: 2013- 00227 Wafer Process: SiGe HBT-A Rev: 03 SIGE HBT-A Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device case temp, T c = 60°C HMC481 (QTR2004-00007) Operating Junction Temp (Toj ) = 111°C (384°K) Stress Junction Temp (Tsj ) = 191°C (464°K) HMC2169 (QTR2013-00339) Operating Junction Temp (Toj ) = 81°C (384°K) Stress Junction Temp (Tsj ) = 131°C (404°K) HMC2170 (QTR2013-00339) Operating Junction Temp (Toj ) = 77°C (350°K) Stress Junction Temp (Tsj ) = 130°C (403°K) HMC6XXX (QTR2013-00340) Operating Junction Temp (Toj ) = 69°C (342°K) Stress Junction Temp (Tsj ) = 99°C (372°K) HMC597 (QTR2013-00360) Operating Junction Temp (Toj ) = 69°C (342°K) Stress Junction Temp (Tsj ) = 125°C (398°K) Device hours: HMC481 (QTR2004-00007) = (96 X 1000hrs) = 96,000 hours HMC2169 (QTR2013-00339) = (81 X 1000hrs) = 81,000 hours HMC2170 (QTR2013-00339) = (81 X 1000hrs) = 81,000 hours HMC6XXX (QTR2013-00340) = (6 X 5039hrs) = 30,234 hours HMC6XXX (QTR2013-00340) = (14 X 2000hrs) = 28,000 hours HMC597 (QTR2013-00360) = (318 X 1000hrs) = 318,000 hours For SIGE HBT-A MMIC, Activation Energy = 0.7 eV QTR: 2013- 00227 Wafer Process: SiGe HBT-A Rev: 03 Acceleration Factor (AF): HMC481 (QTR2004-00007) Acceleration Factor = exp[0.7/8.6x10-5(1/384-1/464)] = 65.1 HMC2169 (QTR2013-00339) Acceleration Factor = exp[0.7/8.6x10-5(1/384-1/464)] = 25.8 HMC2170 (QTR2013-00339) Acceleration Factor = exp[0.7/8.6x10-5(1/384-1/464)] = 33.0 HMC6XXX (QTR2013-00340) Acceleration Factor = exp[0.7/8.6x10-5(1/342-1/372)] = 9.0 HMC597 (QTR2013-00360) Acceleration Factor = exp[0.7/8.6x10-5(1/342-1/398)] = 45.9 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (96,000 x 65.1)+(81,000 x 25.8)+(81,000 x 33.0)+(30,234 x 9.0)+(28,000 x 9.0) +(318,000 x 45.9) = 2.61x107 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 60°C package backside temp; Failure Rate 7 7 -8 7 λ 60 = [(χ2) 60 , 2 ]/(2X 2.61x10 )] = 1.83/ 5.23x10 = 3.50x10 failures/hour or 35.0 FIT, or MTTF = 2.86x10 hours λ 90 = [(χ2) 90 , 2 ]/(2X 2.61x107 )] = 4.61/ 5.23x107 = 8.82x10-8 failures/hour or 88.2 FIT, or MTTF = 1.13x107 hours