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HMC517LC4
v03.0514
LOW NOISE AMPLIFIERS - SMT
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
Typical Applications
Features
The HMC517LC4 is ideal for use as a LNA or driver
amplifier for:
Noise Figure: 2.5 dB
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military
Gain: 19 dB
OIP3: +23 dBm
Single Supply: +3V @ 67 mA
50 Ohm Matched Input/Output
RoHS Compliant 4 x 4 mm Package
Functional Diagram
General Description
The HMC517LC4 chip is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifier (LNA) housed in
a leadless “Pb free” RoHS compliant SMT package.
The HMC517LC4 provides 19 dB of small signal gain,
2.5 dB of noise figure and has an output IP3 of
+23 dBm. The P1dB output power of +13 dBm enables
the LNA to also function as a LO driver for balanced,
I/Q or image reject mixers. The HMC517LC4 allows
the use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Min.
Frequency Range
Gain
1
Typ.
Max.
Min.
17 - 22
16
Typ.
Max.
22 - 26
19
15
Units
GHz
18
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
dB/ °C
Noise Figure
2.5
3.1
2.6
3.3
dB
Input Return Loss
15
15
Output Return Loss
11
17
dB
Output Power for 1 dB Compression (P1dB)
12
13
dBm
Saturated Output Power (Psat)
15
16
dBm
Output Third Order Intercept (IP3)
23
24
dBm
Supply Current (Idd)(Vdd = +3V)
67
67
mA
dB
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC517LC4
v03.0514
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
22
20
S21
S11
S22
5
GAIN (dB)
RESPONSE (dB)
15
-5
18
16
14
-15
+25C
+85C
-40C
12
-25
10
12
16
20
24
28
32
16
18
FREQUENCY (GHz)
24
26
28
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-5
+25C
+85C
-40C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
-10
-15
-20
-25
-20
16
18
20
22
24
26
16
28
18
20
22
24
26
28
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Output IP3 vs. Temperature
10
30
25
8
20
+25C
+85C
-40C
6
IP3 (dBm)
NOISE FIGURE (dB)
20
LOW NOISE AMPLIFIERS - SMT
24
4
15
+25C
+85C
-40C
10
2
5
0
0
16
18
20
22
FREQUENCY (GHz)
24
26
16
18
20
22
24
26
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC517LC4
v03.0514
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
Psat vs. Temperature
20
16
16
Psat (dBm)
P1dB (dBm)
20
12
8
+25C
+85C
-40C
4
12
+25C
+85C
-40C
8
4
0
0
16
18
20
22
24
26
16
18
20
FREQUENCY (GHz)
Pout (dBm), GAIN (dB), PAE (%)
-10
+25C
+85C
-40C
-30
-40
-50
-60
16
18
20
22
24
26
Power Compression @ 21 GHz
0
-20
22
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
ISOLATION (dB)
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
24
26
28
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-24
Pout
Gain
PAE
-20
-16
-12
-8
-4
0
INPUT POWER (dBm)
FREQUENCY (GHz)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
2.5
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Gain
Noise Figure
P1dB
3
NOISE FIGURE (dB)
GAIN (dB), P1dB (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 21 GHz
3.5
Vdd (V)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC517LC4
v03.0514
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Vdd (V)
Idd (mA)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
+2 dBm
+2.5
66
Channel Temperature
175 °C
+3.0
68
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
2.65 W
+3.5
71
Thermal Resistance
(channel to die bottom)
34 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Note: Amplifier will operate over full voltage range shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
LOW NOISE AMPLIFIERS - SMT
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
Package Information
Part Number
Package Body Material
Lead Finish
HMC517LC4
Alumina, White
Gold over Nickel
MSL Rating
MSL3
[1]
Package Marking [2]
H517
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC517LC4
v03.0514
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
5
Pin Number
Function
Description
1, 5 - 14, 18,
20, 22, 24
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
23, 21, 19
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 µF are required.
16
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
2, 4, 15, 17
GND
These pins and package bottom must be
connected to RF/DC ground.
Interface Schematic
Application Circuit
Component
Value
C1, C2, C3
100 pF
C4, C5, C6
1,000 pF
C7, C8, C9
2.2 µF
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC517LC4
v03.0514
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 108537 [1]
Item
Description
J1 - J2
PCB Mount K Connector
J3 - J6
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4 - C6
1,000 pF Capacitor, 0603 Pkg.
C7 - C9
2.2 µF Capacitor, Tantalum
U1
HMC517LC4 Amplifier
PCB [2]
108535 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6