TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC817LP4E v00.1108 Typical Applications Features The HMC817LP4E is ideal for: Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G Gain: 16 dB • BTS & Infrastructure Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Multi-Channel Applications 50 Ohm Matched Input/Output • Access Points TE 24 Lead 4x4mm QFN Package: 16 mm2 Functional Diagram General Description LE The HMC817LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC817LP4E shares the same package and pinout with the HMC816LP4E and HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Electrical Specifications, TA = +25° C, O Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2 Parameter Vdd = +3 V Min. Frequency Range Gain Typ. Max. Min. 698 - 960 13 Gain Variation Over Temperature Vdd = +5 V Typ. Max. Min. 550 - 1200 16 11 0.003 Min. 13.5 11.5 MHz 16 dB 0.005 dB/ °C 0.5 28 22 22 17 dB Output Return Loss 12 14 12 15 dB 21 dBm 16 12.5 16.5 18.5 0.85 Units Noise Figure 14 0.55 Max. 550 - 1200 16 0.005 1.1 Typ. Input Return Loss Output Power for 1 dB Compression (P1dB) 0.5 Max. 698 - 960 15 0.003 0.8 Typ. 20.5 0.6 16.5 1.1 dB Saturated Output Power (Psat) 17 17.5 21 21.5 dBm Output Third Order Intercept (IP3) 31 30 37 37 dBm Supply Current (Idd) 24 34 44 24 34 44 65 95 124 65 95 124 mA * Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Broadband Gain & Return Loss 7 Gain vs. Temperature [1] 25 20 5 GAIN (dB) -5 S22 -15 TE 12 S11 -35 10 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 B SO GAIN (dB) 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 O 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 -15 -20 -25 -35 0.5 0 -5 -5 -15 +25 C +85 C - 40 C -20 -25 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Reverse Isolation vs. Temperature [1] 0 -10 +25 C +85 C - 40 C -30 ISOLATION (dB) RETURN LOSS (dB) -10 1.3 Output Return Loss vs. Temperature [1] +25 C +85 C - 40 C -10 -15 -20 -25 -30 0.5 0.7 -5 +25C +85C - 40C 18 10 0.6 0 20 12 0.5 2 Input Return Loss vs. Temperature [1] 22 14 1.8 LE 0.4 Gain vs. Temperature [2] 16 16 14 -25 0.2 +25C +85C - 40C 18 Vdd= 5V Vdd= 3V RETURN LOSS (dB) RESPONSE (dB) 15 Amplifiers - Low Noise - SMT 22 S21 -30 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC817LP4E v00.1108 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Noise Figure vs. Temperature [1] P1dB vs. Temperature 24 0.8 0.6 P1dB (dBm) +85C +25 C 0.4 18 Vdd=3V 16 TE 14 -40C 0.2 +25 C +85 C - 40 C 12 0 10 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 Psat vs. Temperature Vdd=5V 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 44 1.1 Vdd=5V 1.2 1.3 +25 C +85 C - 40 C 40 B SO 16 0.5 48 20 18 1.3 Output IP3 vs. Temperature 24 22 1.2 LE 0.6 Vdd=3V IP3 (dBm) 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 O 36 32 28 +25 C +85 C -40 C Vdd=3V 24 20 0.5 1.3 Output IP3 and Supply Current vs. Supply Voltage @ 700 MHz 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz 210 40 210 38 180 38 180 36 150 36 150 34 120 34 120 32 90 32 90 30 60 30 60 28 30 28 30 0 26 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 40 Idd (mA) IP3 (dBm) Vdd=5V 20 IP3 (dBm) NOISE FIGURE (dB) 22 Vdd= 5V Vdd= 3V 1 Psat (dBm) Amplifiers - Low Noise - SMT 1.2 HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Power Compression @ 700 MHz [1] 40 Pout Gain PAE 30 20 0 -10 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -16 INPUT POWER (dBm) -14 -12 -10 -8 -6 -4 -2 0 2 LE INPUT POWER (dBm) Power Compression @ 900 MHz [2] Power Compression @ 700 MHz [2] 50 60 40 Pout Gain PAE 30 20 10 0 -10 B SO Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE TE 10 50 Amplifiers - Low Noise - SMT Pout (dBm), GAIN (dB), PAE (%) 60 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 50 50 Pout Gain PAE 40 30 20 10 0 -10 8 -16 -14 -12 -10 INPUT POWER (dBm) Gain P1dB 1 24 0.8 22 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) -6 -4 -2 0 2 4 6 5.1 0.2 0 5.5 1 Gain P1dB 0.8 0.6 20 0.4 18 Noise Figure 0.2 16 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 NOISE FIGURE (dB) 0.6 NOISE FIGURE (dB) 20 GAIN (dB) & P1dB (dBm) 24 22 -8 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz O Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz GAIN (dB) & P1dB (dBm) 7 Power Compression @ 900 MHz [1] 0 5.5 SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC817LP4E v00.1108 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Cross Channel Isolation [1] Magnitude Balance [1] RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 -20 -30 -40 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.7 0.8 0.7 0.8 0.9 LE B SO 1 0.6 0.6 1 1.1 1.2 1.3 Absolute Maximum Ratings 2 -2 0.5 -0.5 FREQUENCY (GHz) Phase Balance [1] -1 0 -1 0.5 1.3 FREQUENCY (GHz) 0 0.5 TE ISOLATION (dB) AMPLITUDE BALANCE (dB) 1 -10 PHASE BALANCE (degrees) Amplifiers - Low Noise - SMT 0 0.9 1 1.1 1.2 Drain Bias Voltage (Vdd) +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 16.67 mW/°C above 85 °C) 1.08 W Thermal Resistance (channel to ground paddle) 60 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 1.3 FREQUENCY (GHz) O Typical Supply Current vs. Vdd (Rbias = 10kΩ) Vdd (V) Idd (mA) 2.7 24 3.0 34 3.3 44 4.5 82 5.0 95 5.5 105 Note: Amplifier will operate over full voltage ranges shown above. Absolute Bias Register for Idd Range & Recommended Bias Resistor Vdd (V) 3V 5V Rbias Ω Idd (mA) Min Max Recommended 10k Open circuit 10k 34 820 58 0 Open circuit 2k 78 10k 95 With Vdd = 3V Rbias <10k is not recommended and may result in LNA becoming conditionally unstable. [1] Vdd = 5V [2] Vdd = 3V 7-5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz TE LE NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE B SO 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Amplifiers - Low Noise - SMT 7 Outline Drawing Package Information Part Number Package Body Material Lead Finish HMC817LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H817 XXXX O [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C Pin Descriptions Pin Number Function Description 1, 6 RFIN1, RFIN2 These pins are matched to 50 Ohms. 2, 5, 7, 12, 14, 17, 19, 24 GND These pins and package bottom must be connected to RF/DC Ground. 3, 4, 8 - 10, 21 - 23 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC817LP4E v00.1108 Pin Descriptions (Continued) Function Description 11, 20 Vdd1, Vdd2 Power supply voltages for each amplifier. Choke inductor and bypass capacitors are required. See application circuit. 13, 18 RFOUT1, RFOUT2 These pins are matched to 50 Ohms. 15, 16 RES1, RES2 These pins are used to set the DC current of each amplifier via external biasing resistor. See application circuit. LE B SO Application Circuit Interface Schematic TE Pin Number O Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz TE LE B SO O List of Materials for Evaluation PCB 123193 Item Description J1 - J4 PCB Mount SMA RF Connector J5, J6 2mm Vertical Molex 8 pos Connector C5, C6 1000 pF Capacitor, 0603 Pkg. C9, C10 0.47 µF Capacitor, 0603 Pkg.. C11, C12 10 kpF Capacitor, 0402 Pkg. R1 - R4 0 Ohm Resistor, 0402 Pkg. R5, R6 (Rbias 1, 2) 10K Resistor, 0402 Pkg. L1, L2 15 nH Inductor, 0402 Pkg. L5, L6 18 nH Inductor, 0603 Pkg. U1 HMC817LP4E Amplifier PCB [2] 122725 Evaluation PCB Amplifiers - Low Noise - SMT 7 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8