Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC716LP3E v03.1113 LOW NOISE AMPLIFIERS - SMT GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Typical Applications Features The HMC716LP3E is ideal for: Noise Figure: 1 dB • Fixed Wireless and LTE/WiMAX/4G Gain: 18 dB • BTS & Infrastructure Output IP3: +33 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 50 Ohm Matched Input/Output • Access Points 16 Lead 3x3mm QFN Package: 9 mm2 Functional Diagram General Description The HMC716LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 3.1 and 3.9 GHz. The amplifier has been optimized to provide 1 dB noise figure, 18 dB gain and +33 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC716LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifi cations TA = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1] Parameter Vdd = +3V Min. Frequency Range Gain Typ. 13 17 1 Input Return Loss 25 Output Return Loss 15.5 1.3 15 26 Supply Current (Idd) 41 MHz 18 dB dB/ °C 1.3 dB dB 16 dB 19 dBm 20.5 dBm 33 55 Units 0.01 1 16 16.5 Output Third Order Intercept (IP3) Max. 30 13 12 Typ. 3.1 - 3.9 0.01 Noise Figure Saturated Output Power (Psat) Min. 3.1 - 3.9 Gain Variation Over Temperature Output Power for 1 dB Compression (P1dB) Vdd = +5V Max. 65 dBm 90 mA [1] Rbias resistor sets current, see application circuit herein 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Broadband Gain & Return Loss [1] [2] Gain vs. Temperature [1] 30 24 S21 10 0 S22 -10 -20 20 18 16 S11 5V 3V -30 14 -40 12 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 Gain vs. Temperature [2] 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 Input Return Loss vs. Temperature [1] 26 0 24 RETURN LOSS (dB) +25C +85C -40C 22 GAIN (dB) +25C +85C -40C 22 GAIN (dB) RESPONSE (dB) 20 20 18 16 +25C +85C -40C -10 -20 LOW NOISE AMPLIFIERS - SMT 26 -30 14 12 -40 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 Output Return Loss vs. Temperature [1] 3 3.4 3.6 FREQUENCY (GHz) 3.8 4 Reverse Isolation vs. Temperature [1] -15 0 +25C +85C -40C -20 +25C +85C -40C ISOLATION (dB) -5 RETURN LOSS (dB) 3.2 -10 -15 -20 -25 -30 -35 -40 -45 -25 3 3.2 3.4 3.6 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 820 Ω 3.8 4 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 [2] Vdd = 3V, Rbias = 47k Ω For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 24 Vdd=5V 21 1.2 P1dB (dBm) NOISE FIGURE (dB) +85C +25C 1.5 0.9 18 Vdd=3V 15 0.6 -40C 12 Vdd=5V Vdd=3V 0.3 0 9 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 +25C +85C -40C 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) Psat vs. Temperature [1] [2] Output IP3 vs. Temperature [1] [2] 24 45 Vdd=5V +25C +85C -40C 41 21 Vdd=5V 37 IP3 (dBm) Psat (dBm) LOW NOISE AMPLIFIERS - SMT 1.8 18 15 33 29 Vdd=3V 12 +25C +85C -40C 25 Vdd=3V 9 21 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 3 3.4 3.6 FREQUENCY (GHz) 3.8 4 Output IP3 and Supply Current vs. Supply Voltage @ 3800 MHz [3] 36 95 34 80 34 80 32 65 32 65 30 50 30 50 Idd IP3 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 IP3 (dBm) 95 35 28 20 26 5 24 5.5 VOLTAGE SUPPLY (V) 2.7 Idd IP3 35 20 5 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47kΩ [3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [4] Measurement reference plane shown on evaluation PCB drawing. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Idd (mA) 36 Idd (mA) IP3 (dBm) Output IP3 and Supply Current vs. Supply Voltage @ 3300 MHz [3] 3.2 HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Power Compression @ 3300 MHz [2] Power Compression @ 3300 MHz [1] 35 Pout Gain PAE 30 25 20 15 10 5 0 -5 -20 -15 -10 -5 INPUT POWER (dBm) 0 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 Pout Gain PAE -5 -16 -12 -8 -4 0 INPUT POWER (dBm) 4 10 5 Pout Gain PAE 0 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 0 2 24 22 P1dB Gain 0.8 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 820 Ω -15 -10 -5 INPUT POWER (dBm) 0 5 [2] Vdd = 3V, Rbias = 47k Ω 1.4 1.3 P1dB Gain 19 1.2 17 1.1 15 1 13 0.9 NF 0.8 11 2.7 NOISE FIGURE (dB) 0.9 NOISE FIGURE (dB) 1 3.9 Pout Gain PAE -4 21 16 3.5 2 1.3 1.1 3.1 8 23 18 12 14 1.4 1.2 NF 20 Gain, Power & Noise Figure vs. Supply Voltage @ 3800 MHz [3] 20 14 26 -10 -20 8 GAIN (dB) & P1dB (dBm) Pout (dBm), GAIN (dB), PAE (%) 15 32 Gain, Power & Noise Figure vs. Supply Voltage @ 3300 MHz [3] GAIN (dB) & P1dB (dBm) 20 Power Compression @ 3800 MHz [2] 35 2.7 25 -5 -20 -18 5 Power Compression @ 3300 MHz [1] -10 -20 30 LOW NOISE AMPLIFIERS - SMT 35 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 40 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k for Vdd 3V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Gain, Noise Figure & Rbias @ 3300 MHz Output IP3 vs. Rbias @ 3300 MHz Vdd=3V Vdd=5V 32 GAIN (dB) IP3 (dBm) Vdd=3V Vdd=5V 20 36 28 24 20 100 1.3 22 1000 10000 18 1.2 16 1.15 14 1.1 12 1.05 1 10 100000 100 Rbias (Ohms) 1.25 1000 10000 100000 Rbias (Ohms) Gain, Noise Figure & Rbias @ 3800 MHz Output IP3 vs. Rbias @ 3800 MHz 40 GAIN (dB) IP3 (dBm) 28 10000 Rbias (Ohms) 100000 1.2 16 1.15 14 1.1 12 1.05 10 1 0.95 8 100 1000 10000 100000 Rbias (Ohms) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com NOISE FIGURE (dB) 32 1000 Vdd=3V Vdd=5V 18 Vdd=3V Vdd=5V 36 20 100 1.25 20 24 5 NOISE FIGURE (dB) LOW NOISE AMPLIFIERS - SMT 40 HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Rbias (Ω) Vdd (V) Min Max Recommended 2.2k 3V 2k 5V [1] Open Circuit 0 Open Circuit Idd (mA) 20 5.6k 30 47k 41 270 48 820 65 2.2k 81 [1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) +5.5V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 11.1 mW/°C above 85 °C) 0.72 W Thermal Resistance (channel to ground paddle) 90 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LOW NOISE AMPLIFIERS - SMT Absolute Bias Resistor Range & Recommended Bias Resistor Values Typical Supply Current vs. Supply Voltage (Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V) Vdd (V) Idd (mA) 2.7 31 3.0 41 3.3 51 4.5 51 5.0 65 5.5 80 Note: Amplifi er will operate over full voltage ranges shown above. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz LOW NOISE AMPLIFIERS - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC716LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [3] 716 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Pin Descriptions Function Description 1, 3 - 7, 9, 10, 12 - 14, 16 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 8 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 15 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. GND Ground paddle must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LOW NOISE AMPLIFIERS - SMT Pin Number 8 HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz LOW NOISE AMPLIFIERS - SMT Application Circuit 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 122540 Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1 10 nF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 0.47 µF Capacitor, 0603 Pkg. C4 100 pF Capacitor, 0402 Pkg. R1 820Ω Resistor, 0402 Pkg. R2 0 Ohm Resistor, 0402 Pkg. U1 HMC716LP3E Amplifier PCB [2] 122490 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10