TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC816LP4E v00.1108 Typical Applications Features The HMC816LP4E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure High Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 50 Ohm Matched Input/Output • Multi-Channel Applications TE 24 Lead 4x4mm QFN Package: 16 mm2 Functional Diagram General Description LE The HMC816LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC816LP4E shares the same package and pinout with the HMC817LP4E & HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Electrical Specifications, TA = +25° C, O Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2 Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 230 - 450 17 Gain Variation Over Temperature Vdd = +5V Typ. Max. Min. 450 - 660 21 14 0.001 Min. 19 15 MHz 19 dB 0.007 dB/ °C 0.5 13 17 15 16 dB Output Return Loss 12 10 13 10 dB 21 dBm 21 dBm 37 dBm Saturated Output Power (Psat) 10 Output Third Order Intercept (IP3) Supply Current (Idd) 14 13 16 15 15 14 16.5 16 26 24 34 28 44 24 34 0.9 Units Noise Figure 10 0.5 Max. 450 - 660 22 0.005 0.9 Typ. Input Return Loss Output Power for 1 dB Compression (P1dB) 0.5 Max. 230 - 450 17 0.002 0.9 Typ. 0.5 19 18 20 18 34 44 68 97 126 68 97 0.9 126 dB mA * Rbias sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Broadband Gain & Return Loss 20 S21 22 10 GAIN (dB) Vdd= 5V Vdd= 3V 5 0 S22 -5 -20 S11 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 14 1.2 Gain vs. Temperature [2] GAIN (dB) B SO +25C +85C - 40C 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 O +25C +85C - 40C -10 -15 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Reverse Isolation vs. Temperature [1] 0 0 REVERSE ISOLATION (dB) -5 +25C +85C - 40C -5 -5 0.7 Output Return Loss vs. Temperature [1] RETURN LOSS (dB) 0.25 0 22 0.2 0.2 1.4 Input Return Loss vs. Temperature [1] 24 14 +25C +85C - 40C LE -25 16 18 16 -15 18 20 TE -10 RETURN LOSS (dB) RESPONSE (dB) 15 Amplifiers - Low Noise - SMT 24 25 20 7 Gain vs. Temperature [1] -10 -15 -10 +25C +85C - 40C -15 -20 -25 -30 -35 -40 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC816LP4E v00.1108 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Noise Figure vs. Temperature [1] P1dB vs. Temperature 24 22 +85C P1dB (dBm) 20 0.6 +25 C 0.4 -40C 0.3 0.4 0.5 0.6 0.2 0.4 LE IP3 (dBm) Vdd=3V +25 C +85 C - 40 C 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.45 0.5 0.55 0.6 0.65 0.7 Vdd=5V O 35 30 25 +25 C +85 C - 40 C Vdd=3V 20 0.2 0.7 Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz 144 43 140 36 126 40 120 34 108 37 100 32 90 34 80 30 72 28 54 31 60 26 36 28 40 24 18 25 20 0 22 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) 2.7 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 38 Idd (mA) IP3 (dBm) 0.35 40 Vdd=5V B SO 10 0.3 45 22 12 0.25 Output IP3 vs. Temperature 24 14 +25 C +85 C - 40 C FREQUENCY (GHz) Psat vs. Temperature 16 Vdd=3V 10 0.2 0.7 FREQUENCY (GHz) 18 16 12 0 20 18 TE Vdd=5V Vdd=3V 0.2 0.2 Vdd=5V 14 IP3 (dBm) NOISE FIGURE (dB) 0.8 Psat (dBm) Amplifiers - Low Noise - SMT 1 HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Pout Gain PAE 35 30 25 20 10 5 0 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) LE INPUT POWER (dBm) Power Compression @ 500 MHz [2] Power Compression @ 500 MHz [1] 45 50 40 35 Pout Gain PAE 30 25 20 15 10 5 0 -18 B SO Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE 35 TE 15 40 Amplifiers - Low Noise - SMT 40 Pout (dBm), GAIN (dB), PAE (%) 45 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 45 45 40 35 25 20 15 10 5 0 4 -18 -16 -14 -12 Gain P1dB 1 24 0.8 22 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) -8 -6 -4 -2 0 2 5.1 0.2 0 5.5 1 Gain P1dB 0.8 20 0.6 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 5.1 0.2 NOISE FIGURE (dB) 0.6 NOISE FIGURE (dB) 20 GAIN (dB) & P1dB (dBm) 24 22 -10 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz O Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz Pout Gain PAE 30 INPUT POWER (dBm) GAIN (dB) & P1dB (dBm) 7 Power Compression @ 400 MHz [2] Power Compression @ 400 MHz [1] 0 5.5 SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC816LP4E v00.1108 Output IP3 vs. Rbias @ 500 MHz 40 38 38 36 36 34 34 IP3 (dBm) 40 32 30 26 Vdd= 3V Vdd= 5V 24 22 500 1000 22 500 10000 1000 LE Magnitude Balance [1] 0 1 RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 B SO -10 0.3 0.4 0.5 0.6 0.7 0.5 0 -0.5 -1 0.2 0.3 FREQUENCY (GHz) O 2 Vdd (V) 1 0.5 0.6 0.7 3V Rbias Ω 5V -1 Idd (mA) Min Max Recommended 4.7k Open circuit 10k 34 820 65 0 -2 0.2 0.4 FREQUENCY (GHz) Absolute Bias Register for Idd Range & Recommended Bias Resistor Phase Balance [1] PHASE BALANCE (degrees) 10000 Rbias (Ohms) Cross Channel Isolation [1] -40 0.2 Vdd= 3V Vdd= 5V 24 Rbias (Ohms) -30 30 28 26 -20 32 TE 28 AMPLITUDE BALANCE (dB) IP3 (dBm) Output IP3 vs. Rbias @ 400 MHz ISOLATION (dB) Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 0 Open circuit 2k 80 3.92k 90 10k 97 With Vdd = 3V Rbias <4.7k is not recommended and may result in LNA becoming conditionally unstable. 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) [1] Vdd = 5V 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC816LP4E SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Supply Current vs. Vdd (Rbias = 10kΩ) Absolute Maximum Ratings +6 V RF Input Power (RFIN1, RFIN2) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 17.86 mW/°C above 85 °C) 1.16 W Thermal Resistance (channel to ground paddle) 56 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vdd1, Vdd2 (V) Idd1, Idd2 (mA) 2.7 24 3.0 34 3.3 44 4.5 82 5.0 97 5.5 110 TE Drain Bias Voltage (Vdd1, Vdd2) Note: Amplifier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS B SO LE Outline Drawing 7 Amplifiers - Low Noise - SMT v00.1108 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY O 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC816LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H816 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC816LP4E v00.1108 Pin Descriptions Function Description 1, 6 RFIN1, RFIN2 This pins are DC coupled. An off-chip DC blocking capacitor is required. 2, 5, 7, 12, 14, 17, 19, 24 GND These pins and package bottom must be connected to RF/DC ground. 3, 4, 8 - 10, 21 - 23 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 18, 13 RFOUT1, RFOUT2 These pins are matched to 50 Ohms. 15, 16 RES1, RES2 These pins are used to set the DC current of each amplifier via external bias resistor. See application circuit. 20, 11 Vdd1, Vdd2 Power Supply Voltages for each amplifier. Choke inductor and bypass capacitors are required. See application circuit. LE B SO Application Circuit Interface Schematic TE Pin Number O Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz TE LE B SO List of Materials for Evaluation PCB 123191 Item PCB Mount SMA RF Connector O J1 - J4 Description J5, J6 2mm Vertical Molex 8pos Connector C1, C2 100 pF Capacitor, 0402 Pkg. C5, C6 1000 pF Capacitor, 0603 Pkg. C9, C10 0.47 µF Capacitor, 0402 Pkg. C11, C12 10k pF Capacitor, 0402 Pkg. R3, R4 0 Ohm Resistor, 0402 Pkg. R5, R6 (Rbias1,2) 10k Ohm Resistor, 0402 Pkg. L1, L2 51 nH Inductor, 0402 Pkg. L3, L4 47 nH Inductor, 0603 Pkg. U1 HMC816LP4E Amplifier PCB [2] 122725 Evaluation PCB Amplifiers - Low Noise - SMT 7 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8