Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC490 v03.0213 LOW NOISE AMPLIFIER - CHIP GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB • Point-to-Multi-Point Radios Output IP3: +35 dBm • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output Output P1dB: +26 dBm Die Size: 2.78 x 1.46 x 0.1 mm Functional Diagram General Description The HMC490 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 17 GHz. The HMC490 provides 27 dB of gain, 2 dB noise figure and an output IP3 of 35 dBm from a +5V supply voltage. The amplifier chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 200 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 12 - 14 24 Typ. Max. 14 - 17 26.5 24 GHz 27 0.03 Noise Figure 2.5 2.0 Input Return Loss 8 12 dB Output Return Loss 8 9 dB 26 dBm 28 dBm Output Power for 1 dB Compression (P1dB) 22 25 23 27 Output Third Order Intercept (IP3) 32 Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 0.03 dB Gain Variation Over Temperature Saturated Output Power (Psat) 0.04 Units 0.04 dB 35 250 200 dB/ °C dBm 250 mA * Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Broadband Gain & Return Loss Gain vs. Temperature 32 30 28 GAIN (dB) RESPONSE (dB) 26 10 0 24 22 20 18 16 -10 14 12 -20 10 8 10 12 14 16 18 20 10 22 11 12 FREQUENCY (GHz) S21 S11 S22 15 16 17 18 +85 C -55 C Output Return Loss vs. Temperature 0 0 -2 RETURN LOSS (dB) -4 RETURN LOSS (dB) 14 +25 C Input Return Loss vs. Temperature -8 -12 -16 -4 -6 -8 -10 -12 -20 -14 10 11 12 13 14 15 16 17 18 10 11 12 FREQUENCY (GHz) +25 C 13 14 15 16 17 18 FREQUENCY (GHz) +85 C -55 C +25 C Noise Figure vs. Temperature +85 C -55 C Output IP3 vs. Temperature 10 40 8 35 30 6 IP3 (dBm) NOISE FIGURE (dB) 13 FREQUENCY (GHz) LOW NOISE AMPLIFIER - CHIP 30 20 4 25 20 2 15 0 10 10 11 12 13 14 15 16 17 18 10 11 12 FREQUENCY (GHz) +25 C +85 C -55 C +25 C 13 14 15 FREQUENCY (GHz) +85 C 16 17 18 -55 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz 32 28 28 24 24 20 20 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 16 12 16 12 8 8 4 4 0 0 10 11 12 13 14 15 16 17 18 10 11 12 13 FREQUENCY (GHz) +25 C +85 C -55 C +25 C 30 5 28 4 26 3 24 2 22 1 4 4.5 17 18 5 +85 C -55 C 30 25 20 15 10 5 0 -10 5.5 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Vdd (V) Gain 16 35 0 20 3.5 15 Power Compression @ 14 GHz Pout (dBm), GAIN (dB), PAE (%) GAIN (dB) Gain & Noise Figure vs. Supply Voltage@ 14 GHz, Idd= 200 mA 3 14 FREQUENCY (GHz) NOISE FIGURE (dB) LOW NOISE AMPLIFIER - CHIP P1dB vs. Temperature Noise Figure Pout Gain, Noise Figure & Output IP3 vs. Supply Current @ 14 GHz, Vdd= 5V* 34 5 30 4 26 3 22 2 Gain PAE Power Dissipation 2 POWER DISSIPATION (W) 1 18 NOISE FIGURE (dB) GAIN (dB), IP3 (dBm) 1.8 1.6 1.4 1.2 1 0.8 0.6 14 100 125 150 0 200 175 IP3 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Idd (mA) Gain 0.4 -10 Noise Figure Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz * Idd is controlled by varying Vgg 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Reverse Isolation vs. Temperature ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C Absolute Maximum Ratings +85 C -55 C Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Gate Bias Voltage (Vgg1, Vgg2, Vgg3) -4 to 0 Vdc +4.5 191 RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm +5.0 200 Channel Temperature 175 °C +5.5 208 Continuous Pdiss (T= 85 °C) (derate 19.2 mW/°C above 85 °C) 1.73 W Thermal Resistance (channel to die bottom) 52 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Vdd (Vdc) Idd (mA) +3.0 189 +3.5 200 +4.0 208 LOW NOISE AMPLIFIER - CHIP 0 Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 200 mA at +5.0V and +3.5V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz LOW NOISE AMPLIFIER - CHIP Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Pad Descriptions Function Description 1,8, 7 Vgg1, 2, 3 Gate control for amplifier. Adjust to achieve Id of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 µF are required. 2 RFIN This pad is AC coupled and matched to 50 Ohms. 3, 4, 5 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 µF are required. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] LOW NOISE AMPLIFIER - CHIP Pad Number 6 HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz LOW NOISE AMPLIFIER - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490 v03.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz LOW NOISE AMPLIFIER - CHIP Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8