Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC517 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz Typical Applications Features The HMC517 is ideal for use as a LNA or Driver amplifier for: Noise Figure: 2.2 dB • Point-to-Point Radios OIP3: +24 dBm • Point-to-Multi-Point Radios & VSAT Single Supply: +3V @ 65 mA • Test Equipment and Sensors 50 Ohm Matched Input/Output • Military & Space Die Size: 2.14 x 1.32 x 0.1 mm Functional Diagram General Description Gain: 19 dB The HMC517 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 17 to 26 GHz frequency range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise figure and has an output IP3 greater than +24 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections. Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Min. Frequency Range Gain 16 Gain Variation Over Temperature Max. Min. Typ. Max. 22 - 26 19 15 Units GHz 18 dB 0.015 0.025 0.015 0.025 dB/ °C Noise Figure 2.2 2.7 2.4 2.9 dB Input Return Loss 17 15 dB Output Return Loss 10 10 dB 12.5 dBm 15 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 - 60 Typ. 17 - 22 8 11 9.5 15 Output Third Order Intercept (IP3) 23 Supply Current (Idd)(Vdd = +3V) 65 24 88 65 dBm 88 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC517 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz 25 24 22 15 20 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 1 Gain vs. Temperature -5 18 16 +25C +85C -55C 14 -15 12 -25 10 12 16 20 24 28 32 16 18 FREQUENCY (GHz) 24 26 28 Output Return Loss vs. Temperature 0 0 +25C +85C -55C +25C +85C -55C -4 RETURN LOSS -5 RETURN LOSS 22 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 -8 -12 -16 -25 -20 16 18 20 22 24 26 28 16 18 FREQUENCY (GHz) 20 22 24 26 28 FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature 30 10 25 8 20 +25C +85C -55C 6 IP3 (dBm) NOISE FIGURE (dB) 20 LOW NOISE AMPLIFIERS - CHIP Broadband Gain & Return Loss 4 +25C +85C -55C 15 10 2 5 0 0 16 18 20 22 FREQUENCY (GHz) 24 26 16 18 20 22 24 26 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 61 HMC517 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz Psat vs. Temperature 20 20 16 16 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 8 +25C +85C -55C 4 12 +25C +85C -55C 8 4 0 0 16 18 20 22 24 26 16 18 20 FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) -10 +25C +85C -55C -30 -40 -50 -60 16 18 20 22 24 24 26 28 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -24 Pout Gain PAE -20 -16 -12 -8 -4 INPUT POWER (dBm) FREQUENCY (GHz) 21 20 19 18 17 16 15 14 13 12 11 10 9 8 2.5 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Gain Noise Figure P1dB 2.75 3 3.25 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 21 GHz 3.5 Vdd (V) 1 - 62 26 Power Compression @ 21 GHz 0 -20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature ISOLATION (dB) LOW NOISE AMPLIFIERS - CHIP 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 HMC517 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +2 dBm +2.5 61 Channel Temperature 175 °C +3.0 65 +3.5 69 Continuous Pdiss (T= 85 °C) (derate 9.8 mW/°C above 85 °C) 0.88 W Thermal Resistance (channel to die bottom) 102.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 LOW NOISE AMPLIFIERS - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 63 HMC517 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz LOW NOISE AMPLIFIERS - CHIP 1 Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 3, 4 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 5 RFOUT This pad is AC coupled and matched to 50 Ohms. 6, 7, 8 Vgg3, Vgg2, Vgg1 These pads must be connected to RF/DC ground for proper operation. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram Note: Vgg1, Vgg2 and Vgg3 must be connected to RF/DC ground. 1 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC517 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum < 0.31 mm (<12 mils) is recommended. Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane LOW NOISE AMPLIFIERS - CHIP 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 65