Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC637ALP5E v01.0914 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637ALP5E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT Output IP3: +44 dBm • Military & Space 50 Ohm Matched Input/Output • Test Instrumentation 32 Lead 5x5mm Lead SMT Package: 25 mm2 • Fiber Optics Functional Diagram General Description The HMC637ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +44 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637ALP5E ideal for EW, ECM, Radar and test equipment applications. The HMC637ALP5E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment. Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA[1] Parameter Frequency Min. Gain DC - 6.0 GHz 12 Gain Flatness DC - 6.0 GHz ±0.75 dB Gain Variation Over Temperature DC - 6.0 GHz 0.015 dB/ °C Input Return Loss DC - 6.0 GHz 12 dB Output Return Loss DC - 6.0 GHz 15 dB Output Power for 1 dB Compression (P1dB) DC - 6.0 GHz 29 dBm Saturated Output Power (Psat) DC - 6.0 GHz 31 dBm DC - 6.0 GHz 44 dBm DC - 2.0 GHz 2.0 - 6.0 GHz 12 5 dB dB Output Third Order Intercept (OIP3) Noise Figure [2] Supply Current (Idd) 27 320 Typ. Max. 13 400 Units dB 480 mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. [2] Two-Tone Output Power = +10 dBm Each Tone, 1 MHz Spacing. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain & Return Loss Gain vs. Temperature 20 18 14 12 GAIN (dB) RESPONSE (dB) 10 0 -10 10 8 6 4 -20 2 -30 0 0 2 4 6 8 0 2 FREQUENCY (GHz) S21 S11 +25C S22 Input Return Loss vs. Temperature 6 8 0 -5 -5 -10 -15 -20 +85C -40C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 4 FREQUENCY (GHz) -25 -10 -15 -20 -25 -30 -30 0 2 4 6 8 0 2 FREQUENCY (GHz) +25C 4 6 8 FREQUENCY (GHz) +85C -40C +25C Reverse Isolation vs. Temperature +85C -40C AMPLIFIERS - LINEAR & POWER - SMT 16 Noise Figure vs. Temperature 24 0 22 20 NOISE FIGURE (dB) ISOLATION (dB) -10 -20 -30 -40 18 16 14 12 10 8 6 -50 4 2 -60 0 2 4 6 8 0 2 +25C +85C 4 6 8 FREQUENCY (GHz) FREQUENCY (GHz) -40C +25C +85C -40C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz 32 30 30 28 28 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 26 26 24 24 22 22 20 20 0 2 4 6 8 0 2 4 FREQUENCY (GHz) +85C -40C +25C 60 55 50 45 40 35 30 25 20 2 4 +85C 6 +85C -40C 8 50 45 40 35 30 25 20 15 10 11.5 12 FREQUENCY (GHz) +25C 8 Gain, Power & Output IP3 vs. Supply Voltage @ 3 GHz, Fixed Vgg Output IP3 vs. Temperature 0 6 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) +25C IP3 (dBm) AMPLIFIERS - LINEAR & POWER - SMT P1dB vs. Temperature 12.5 Vdd (V) Gain P1dB -40C Gain & Return Loss vs. Frequency, Log Scale Psat OIP3 Output IP3 vs. Temperature, Log Scale 60 20 55 50 IP3 (dBm) RESPONSE (dB) 10 0 -10 45 40 35 30 -20 25 20 -30 0.01 0.1 1 10 S21 3 S11 0 0.1 1 10 FREQUENCY (GHz) FREQUENCY (GHz) S22 +25C +85C -40C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Drain Bias Voltage (Vdd) +14 Vdc Gate Bias Voltage (Vgg1) -3 to 0 Vdc Gate Bias Voltage (Vgg2) +4 to +7 Vdc RF Input Power (RFIN)(Vdd = +12 Vdc) +25 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 95 mW/°C above 85 °C) 8.6 W Thermal Resistance (channel to ground paddle) 10.5 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C ESD Sensitivity (HBM) Class 1B Typical Supply Current vs. Vdd Vdd (V) Idd (mA)[1] 11.5 400 12.0 400 12.5 400 [1] Vgg1 set intitially for nominal bias condition of Vdd = +12 V and Vgg2 = +5V to achieve Idd = 400 mA typical. Then adjusting Vdd +/- 0.5 V from 12V to measure Idd variation. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings 4 HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz AMPLIFIERS - LINEAR & POWER - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC637ALP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL3 [1] Package Marking [2] H637A XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Pin Descriptions Function Description N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 2 Vgg2 Gate Control 2 for amplifier. +5V should be applied to Vgg2 for nominal operation. Attach bypass capacitor per application circuit herein. 5 RFIN This pad is DC coupled and matched to 50 Ohms. 13 Vgg1 Gate Control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” Application Note. 15 ACG4 Interface Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. 16 ACG3 21 RFOUT & Vdd 29 ACG2 30 ACG1 Ground Paddle GND RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. AMPLIFIERS - LINEAR & POWER - SMT Pin Number 1, 3, 4, 6 - 12, 14, 17, 18, 19, 20, 22 - 28, 31, 32 Ground paddle must be connected to RF/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz AMPLIFIERS - LINEAR & POWER - SMT Application Circuit 7 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. NOTE 2: Power Up Bias Sequence A) Set Vgg1 to -2V B) Set Vdd to +12V C) Set Vgg2 to +5V D) Adjust Vgg1 to achieve Idd for 400 mA Power Down Sequence A) Remove Vgg2 Bias B) Remove Vdd Bias C) Remove Vgg1 Bias For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637ALP5E v01.0914 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB List of Materials for Evaluation PCB EV1HMC637ALP5 Item Description J1 - J2 SRI SMA Connector J3 - J4 2mm Molex Header C1, C2 100 pF Capacitor, 0402 Pkg. C3 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C9 4.7 µF Capacitor, Tantalum U1 HMC637ALP5E PCB [2] 109765 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8