Si5947DU Datasheet

Si5947DU
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.058 at VGS = - 4.5 V
- 6a
0.100 at VGS = - 2.5 V
- 6a
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
Qg (Typ.)
5.5 nC
PowerPAK ChipFET Dual
1
• Load Switch, PA Switch, and Charger Switch for Portable
S1
S2
Devices
3
G1
D1
8
APPLICATIONS
2
S1
4
S2
D1
7
G2
D2
6
Marking Code
D2
DE
G1
XXX
G2
Lot Traceability
and Date Code
5
Part #
Code
Bottom View
Ordering Information: Si5947DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Limit
- 20
± 12
- 6a
- 6a
- 5b, c
- 4b, c
- 20
- 6a
- 1.9b, c
10.4
6.7
2.3b, c
1.5b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
43
55
Maximum Junction-to-Ambientb, f
°C/W
RthJC
9.5
12
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 73695
S09-0391-Rev. C, 09-Mar-09
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Si5947DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 19
mV/°C
2.6
- 0.6
- 1.5
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ - 5 V, VGS = - 4.5 V
- 20
µA
A
VGS = - 4.5 V, ID = - 3.6 A
0.048
0.058
VGS = - 2.5 V, ID = - 1 A
0.081
0.100
VDS = - 10 V, ID = - 3.6 A
10
VDS = - 10 V, VGS = 0 V, f = 1 MHz
125
VDS = - 10 V, VGS = - 10 V, ID = - 5 A
11
17
5.5
8.5
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
480
90
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A
tr
1.2
VDD = - 10 V, RL = 2.5 Ω
ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
9
11
20
42
65
33
50
tf
50
75
td(on)
5
10
15
25
tr
td(off)
nC
1.8
f = 1 MHz
td(on)
td(off)
pF
VDD = - 10 V, RL = 2.5 Ω
ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω
tf
25
40
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
-6
- 20
IS = - 4 A, VGS = 0 V
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.9
- 1.2
V
25
50
ns
10
20
nC
9
16
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73695
S09-0391-Rev. C, 09-Mar-09
Si5947DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
20
VGS = 4.5 V
VGS = 4 V
ID - Drain Current (A)
16
VGS = 3.5 V
VGS = 3 V
4
ID - Drain Current (A)
VGS = 5 V
12
VGS = 2.5 V
8
VGS = 2 V
3
2
TC = 125 °C
TC = 25 °C
1
4
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
2.0
800
VGS = 2.5 V
0.16
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
700
0.12
0.08
VGS = 4.5 V
600
Ciss
500
400
300
200
Coss
100
Crss
0.04
0
0
4
8
12
16
20
0
4
6
8
10
12
14
16
18
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.6
10
VGS = 4.5 V
ID = 3.6 A
ID = 5.1 A
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2
VDS = 10 V
6
VDS = 16 V
4
1.4
1.2
1.0
0.8
2
0
0
2
4
6
8
10
12
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73695
S09-0391-Rev. C, 09-Mar-09
150
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Si5947DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.16
20
ID = 3.6 A
RDS(on) - Drain-to-Source
On-Resistance (Ω)
IS - Source Current (A)
0.14
10
TJ = 150 °C
TJ = 25 °C
0.12
0.10
TA = 125 °C
0.08
0.06
TA = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
0.04
2.0
1.2
2.5
VSD - Source-to-Drain Voltage (V)
4.0
4.5
5.0
On-Resistance vs. Gate-to-Source Voltage
30
1.3
1.2
25
ID = 250 µA
1.1
20
Power (W)
VGS(th) (V)
3.5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.9
15
10
0.8
0.7
- 50
3.0
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM limited
ID - Drain Current (A)
Limited by R DS(on)*
10
ID(on) limited
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 73695
S09-0391-Rev. C, 09-Mar-09
Si5947DU
Vishay Siliconix
12
12
10
10
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
Package Limited
6
4
8
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73695
S09-0391-Rev. C, 09-Mar-09
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Si5947DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Thermal Impedance
Normalized Effective Transient
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
t1
0.05
t2
t
1. Duty Cycle, D = t1
2
2. Per Unit Base = R thJA = 87 °C/W
0.02
3. TJM - TA = PDM Z thJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
0.01
10-4
0.02
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73695.
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Document Number: 73695
S09-0391-Rev. C, 09-Mar-09
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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