Si5947DU Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 6a 0.100 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile Qg (Typ.) 5.5 nC PowerPAK ChipFET Dual 1 • Load Switch, PA Switch, and Charger Switch for Portable S1 S2 Devices 3 G1 D1 8 APPLICATIONS 2 S1 4 S2 D1 7 G2 D2 6 Marking Code D2 DE G1 XXX G2 Lot Traceability and Date Code 5 Part # Code Bottom View Ordering Information: Si5947DU-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit - 20 ± 12 - 6a - 6a - 5b, c - 4b, c - 20 - 6a - 1.9b, c 10.4 6.7 2.3b, c 1.5b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 43 55 Maximum Junction-to-Ambientb, f °C/W RthJC 9.5 12 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 73695 S09-0391-Rev. C, 09-Mar-09 www.vishay.com 1 Si5947DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 19 mV/°C 2.6 - 0.6 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 20 µA A VGS = - 4.5 V, ID = - 3.6 A 0.048 0.058 VGS = - 2.5 V, ID = - 1 A 0.081 0.100 VDS = - 10 V, ID = - 3.6 A 10 VDS = - 10 V, VGS = 0 V, f = 1 MHz 125 VDS = - 10 V, VGS = - 10 V, ID = - 5 A 11 17 5.5 8.5 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 480 90 VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A tr 1.2 VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 9 11 20 42 65 33 50 tf 50 75 td(on) 5 10 15 25 tr td(off) nC 1.8 f = 1 MHz td(on) td(off) pF VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω tf 25 40 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -6 - 20 IS = - 4 A, VGS = 0 V IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.9 - 1.2 V 25 50 ns 10 20 nC 9 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73695 S09-0391-Rev. C, 09-Mar-09 Si5947DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 VGS = 4.5 V VGS = 4 V ID - Drain Current (A) 16 VGS = 3.5 V VGS = 3 V 4 ID - Drain Current (A) VGS = 5 V 12 VGS = 2.5 V 8 VGS = 2 V 3 2 TC = 125 °C TC = 25 °C 1 4 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 2.0 800 VGS = 2.5 V 0.16 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 700 0.12 0.08 VGS = 4.5 V 600 Ciss 500 400 300 200 Coss 100 Crss 0.04 0 0 4 8 12 16 20 0 4 6 8 10 12 14 16 18 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 10 VGS = 4.5 V ID = 3.6 A ID = 5.1 A 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 VDS = 10 V 6 VDS = 16 V 4 1.4 1.2 1.0 0.8 2 0 0 2 4 6 8 10 12 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73695 S09-0391-Rev. C, 09-Mar-09 150 www.vishay.com 3 Si5947DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.16 20 ID = 3.6 A RDS(on) - Drain-to-Source On-Resistance (Ω) IS - Source Current (A) 0.14 10 TJ = 150 °C TJ = 25 °C 0.12 0.10 TA = 125 °C 0.08 0.06 TA = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 0.04 2.0 1.2 2.5 VSD - Source-to-Drain Voltage (V) 4.0 4.5 5.0 On-Resistance vs. Gate-to-Source Voltage 30 1.3 1.2 25 ID = 250 µA 1.1 20 Power (W) VGS(th) (V) 3.5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 0.9 15 10 0.8 0.7 - 50 3.0 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM limited ID - Drain Current (A) Limited by R DS(on)* 10 ID(on) limited 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 BVDSS limited 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 73695 S09-0391-Rev. C, 09-Mar-09 Si5947DU Vishay Siliconix 12 12 10 10 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 Package Limited 6 4 8 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73695 S09-0391-Rev. C, 09-Mar-09 www.vishay.com 5 Si5947DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Thermal Impedance Normalized Effective Transient Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM t1 0.05 t2 t 1. Duty Cycle, D = t1 2 2. Per Unit Base = R thJA = 87 °C/W 0.02 3. TJM - TA = PDM Z thJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 Single Pulse 0.01 10-4 0.02 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73695. www.vishay.com 6 Document Number: 73695 S09-0391-Rev. C, 09-Mar-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1