NMLU1210 Full Bridge Rectifier Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm mCool™ Package Features • • • • • • • • Full−Bridge Rectifier Block Up to 3.2 A operation Low RDS(on) MOSFET to minimize conduction loss Low gate charge MOSFET Low VF Schottky diode Ultra Low Inductance Package This Device uses Halogen−Free Molding Compound These are Pb−Free Devices http://onsemi.com MOSFET RDS(on) TYP V(BR)DSS ID MAX 23 mW @ 4.5 V 20 V 3.2 A 17 mW @ 10 V SCHOTTKY DIODE Applications VR MAX VF TYP IF MAX 20 V 0.45 V 3.2 A • Wireless Charging • AC−DC Rectification • Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Input voltage between two MOSFET drain Value Unit VLL 20 V TJ, TSTG −55 to 125 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Continuous Drain Current R_JA (Note 1) TA = 25°C IO 2.2 A Power Dissipation R_JA (Note 1) TA = 25°C Continuous Drain Current R_JA t < 5 s (Note 1) TA = 25°C Power Dissipation R_JA t < 5 s (Note 1) TA = 25°C Continuous Drain Current R_JA (Note 2) TA = 25°C Bridge Operating Junction and Storage Temperature PD IO PD W 2.34 IO PIN CONNECTIONS Vout Vout Vout L1_1 GND1 W 0.47 GND1 0.185 L1_2 L1_2 PD 1210 AYWWG G 1210 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) A 1.16 GND2 GND2 (Top View) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. August, 2013 − Rev. 1 UDFN CASE 517BS 0.6 TA = 85°C © Semiconductor Components Industries, LLC, 2013 Ç ÇÇ 0.94 TA = 85°C TA = 85°C A 3.2 1.88 TA = 85°C TA = 25°C W 1.2 0.47 TA = 85°C MARKING DIAGRAM L1_1 Power Dissipation R_JA (Note 2) 1.16 TA = 85°C RECTIFIER 4.0 4.0 mm mCool Pin Connections (Top View) 1 ORDERING INFORMATION Device Package Shipping† NMLU1210TWG UDFN (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NMLU1210/D NMLU1210 THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 82.5 °C/W Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 42.5 Junction−to−Ambient – Steady State min Pad (Note 4) RθJA 209 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. BRIDGE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Rectifying Forward Voltage (Note 5) Vfd2 Rectifier leakage current Rectifier Reverse leakage current Min Typ Max Unit Input voltage VLL = ±5 V; The output current of Rectifier Iout = 2 A 0.45 .56 V Ileak Input voltage VLL = 16 V; No Load on the Rectifier output 31 1000 uA Irleak Input voltage VLL = 0 V; The output voltage of the Rectifier Vout = 5 V 21 1000 uA Typ Max Unit 2.2 V ON CHARACTERISTICS 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.2 Negative Threshold Temperature Coefficient VGS(TH) / TJ Drain−to−Source On Resistance (Note 6) RDS(on) Parameter ON CHARACTERISTICS Forward Transconductance gFS 4 mV/°C VGS = 10 V, ID = 3.2 A 17 26 VGS = 4.5 V, ID = 3.2 A 23 32 VDS = 10 V, ID = 2.0 A 3.5 S TJ = 25°C 0.79 V TJ = 125°C 0.65 mW DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 6) VSD VGS = 0 V, IS = 2.0 A 6. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Maximum Instantaneous Forward Voltage (Note 7) VF Min Typ IF = 1.0 A 0.36 IF = 2.0 A 0.41 Maximum Instantaneous Reverse Current IR VR = 20 V 0.04 Max Unit V mA 7. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 100°C unless otherwise specified) Parameter Maximum Instantaneous Forward Voltage (Note 8) Maximum Instantaneous Reverse Current Symbol Test Condition VF IR Min Typ IF = 1.0 A 0.29 IF = 2.0 A 0.36 VR = 20 V 4 Max Unit V mA 8. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G. The test on each individual die is limited to the system package. http://onsemi.com 2 NMLU1210 Figure 1. Typical Application Circuit GND1 and GND2 are not internally connected. The user should make the connection in the PCB design. http://onsemi.com 3 NMLU1210 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 10 1 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 125°C 25°C −55°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Bridge Typical Forward Voltage Drop at Vin . 5 V Figure 3. Bridge Maximum Forward Voltage Drop at Vin . 5 V 1.8 1k ILEAK, OUTPUT LEAKAGE (mA) 1k 100 Maximum 10 1 Typical 0.1 0.01 25 35 45 55 65 75 85 95 105 100 Typical 1 0.1 0.01 25 115 125 Maximum 10 35 45 55 65 75 85 TJ, TEMPERATURE JUNCTION (°C) 105 115 125 Figure 5. Input Leakage at 16 V vs. Junction Temperature 700 40 ID = 2 A TJ = 25°C 600 95 TJ, TEMPERATURE JUNCTION (°C) Figure 4. Output Leakage at 5 V Bias vs. Junction Temperature ID = 2 A TJ = 25°C 35 RDS(on) (mW) 500 RDS(on) (mW) 25°C 125°C 0.1 1.8 10k OUTPUT LEAKAGE (mA) −55°C 400 300 30 25 200 20 100 0 2.0 3.0 4.0 5.0 6.0 7.0 VGS (V) 8.0 9.0 15 2.0 10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 6. FET Typical On−Resistance vs. Gate−to−Source Voltage ( from 3 V to 10 V) Figure 7. FET Typical On−Resistance vs. Gate−to−Source Voltage http://onsemi.com 4 10 NMLU1210 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 100 1 0.1 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 125°C 25°C 1.0 0.1 25°C 0.01 −55°C 0 125°C 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.001 0 0.9 Figure 8. Schottky Typical Forward Current vs. Forward Voltage 5 10 15 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 9. Schottky Typical Reverse Current vs. Reverse Voltage http://onsemi.com 5 25 NMLU1210 PACKAGE DIMENSIONS UDFN8 4x4, 0.8P CASE 517BS ISSUE A A B D PIN ONE REFERENCE ÉÉÉ ÉÉÉ DETAIL A ALTERNATE CONSTRUCTIONS TOP VIEW ÇÇÇÇ Ç ÇÇÇ ÇÇ 0.08 C (A3) NOTE 4 SIDE VIEW ÇÇ ÉÉ ÉÉ EXPOSED Cu A DETAIL B 0.10 C L3 L1 L E 0.15 C 0.15 C C 0.10 D2 M MOLD CMPD A1 ÉÉ ÇÇ ÇÇ ALTERNATE CONSTRUCTIONS SEATING PLANE C A B NOTE 5 DETAIL A F/2 4 2X E3 0.10 5 e e/2 F 8X M MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 4.00 BSC 2.10 2.30 0.90 1.10 4.00 BSC 2.50 2.70 1.00 1.20 0.80 BSC 3.55 BSC 0.30 0.50 0.00 0.15 0.13 0.23 RECOMMENDED SOLDERING FOOTPRINT* C A B 4X NOTE 5 E2 8 DIM A A1 A3 b D D2 D3 E E2 E3 e F L L1 L3 A3 DETAIL B A1 D3 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. POSITIONAL TOLERANCE APPLIES TO ALL OF THE EXPOSED PADS. L L3 0.35 2.34 6X 0.60 PACKAGE OUTLINE b 0.10 M C A B 0.05 M C 4.15 2.74 NOTE 3 BOTTOM VIEW 2X 0.80 0.40 1.14 2X 0.80 1.15 1.24 1 DETAIL C 3.69 DIMENSIONS: MILLIMETERS DETAIL C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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