MBR230LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS Features SOD-123FL CASE 498 PLASTIC •Guardring for Stress Protection •Low Forward Voltage •125°C Operating Junction Temperature •Epoxy Meets UL 94 V-0 •Package Designed for Optimal Automated Board Assembly •ESD Ratings: Machine Model, C MARKING DIAGRAM Human Body Model, 3B L3N MG G •This is a Pb-Free Device Mechanical Characteristics •Reel Options: MBR230LSFT1 = 3,000 per 7 in reel/8 mm tape •Device Marking: L3N •Polarity Designator: Cathode Band •Weight: 11.7 mg (approximately) •Case: Epoxy, Molded •Lead Finish: 100% Matte Sn (Tin) •Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds •Device Meets MSL 1 Requirements L3N = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package MBR230LSFT1G SOD-123FL (Pb-Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 0 1 Publication Order Number: MBR230LSFT1/D MBR230LSFT1 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 30 V IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) IFRM 4.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg -55 to 150 °C Operating Junction Temperature TJ -55 to 125 °C dv/dt 10,000 V/ms Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 105°C) Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Thermal Thermal Thermal Resistance, Resistance, Resistance, Resistance, Junction-to-Lead (Note 1) Junction-to-Lead (Note 2) Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3) (VR = 30 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.38 0.43 0.30 0.37 TJ = 25°C TJ = 100°C 1.0 25 V mA MBR230LSFT1 TYPICAL CHARACTERISTICS TJ = 125°C TJ = 100°C TJ = 25°C TJ = -55°C 0.1 0.10 0.20 0.30 0.40 0.50 0.60 0.70 1 T = 125°C J TJ = 100°C 0.1 0.10 0.80 0.20 0.30 0.40 0.50 0.60 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage TJ = 125°C 10E-3 TJ = 25°C 10E-6 1E-6 TJ = -55°C 100E-9 TJ = 125°C 10E-3 TJ = 100°C 1E-3 TJ = 25°C 100E-6 10E-9 1E-9 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 TJ = -55°C 10E-6 0 3.5 dc 3 2.5 freq = 20 kHz square wave Ipk/IO = p Ipk/IO = 5 1.5 1 0.5 0 25 35 45 55 65 75 85 95 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Maximum Reverse Current 105 115 125 TL, LEAD TEMPERATURE (°C) PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Reverse Current 2 0.70 1E+0 100E-3 TJ = 100°C 1E-3 100E-6 IO, AVERAGE FORWARD CURRENT (AMPS) TJ = -55°C TJ = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 10 IR, MAXIMUM REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1.6 1.4 dc square wave Ipk/IO = p 1.2 1.0 Ipk/IO = 5 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation Figure 5. Current Derating http://onsemi.com 3 3.5 MBR230LSFT1 C, CAPACITANCE (pF) 1000 TJ, DERATED OPERATING TEMPERATURE (°C) TYPICAL CHARACTERISTICS TJ = 25 °C 100 10 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 125 120 RqJA = 25.6 °C/W 115 110 105 100 RqJA = 130 °C/W 95 90 RqJA = 235 °C/W 85 80 75 70 65 RqJA = 324.9 °C/W RqJA = 400 °C/W 0 r(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 2 4 6 8 10 12 14 16 VR, DC REVERSE VOLTAGE (VOLTS) 18 20 Figure 8. Typical Operating Temperature Derating 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE qJA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.1 0.01 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MBR230LSFT1 PACKAGE DIMENSIONS SOD-123LF CASE 498-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. E q D DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A L b MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° - MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 - MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° HE q c SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 ÉÉ ÉÉ ÉÉ 2.36 0.093 4.19 0.165 1.22 0.048 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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