NMLU1210 Full Bridge Rectifier Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm mCool™ Package Features • • • • • • • • Full−Bridge Rectifier Block Up to 3.2 A operation Low RDS(on) MOSFET to minimize conduction loss Low gate charge MOSFET Low VF Schottky diode Ultra Low Inductance Package This Device uses Halogen−Free Molding Compound These are Pb−Free Devices http://onsemi.com MOSFET RDS(on) TYP V(BR)DSS ID MAX 23 mW @ 4.5 V 20 V 3.2 A 17 mW @ 10 V SCHOTTKY DIODE Applications VR MAX VF TYP IF MAX 20 V 0.45 V 3.2 A • Wireless Charging • AC−DC Rectification • Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Input voltage between two MOSFET drain Value Unit VLL 20 V TJ, TSTG −55 to 125 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Continuous Drain Current R_JA (Note 1) TA = 25°C IO 2.2 A Power Dissipation R_JA (Note 1) TA = 25°C Continuous Drain Current R_JA t < 5 s (Note 1) TA = 25°C Power Dissipation R_JA t < 5 s (Note 1) TA = 25°C Continuous Drain Current R_JA (Note 2) TA = 25°C Bridge Operating Junction and Storage Temperature PD IO PD W 2.34 IO PIN CONNECTIONS Vout Vout Vout L1_1 GND1 W 0.47 GND1 0.185 L1_2 L1_2 PD 1210 AYWWG G 1210 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) A 1.16 GND2 GND2 (Top View) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. December, 2011 − Rev. 0 UDFN CASE 517BS 0.6 TA = 85°C © Semiconductor Components Industries, LLC, 2011 Ç ÇÇ 0.94 TA = 85°C TA = 85°C A 3.2 1.88 TA = 85°C TA = 25°C W 1.2 0.47 TA = 85°C MARKING DIAGRAM L1_1 Power Dissipation R_JA (Note 2) 1.16 TA = 85°C RECTIFIER 4.0 4.0 mm mCool Pin Connections (Top View) 1 ORDERING INFORMATION Device Package Shipping† NMLU1210TWG UDFN (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NMLU1210/D NMLU1210 THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 82.5 °C/W Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 42.5 Junction−to−Ambient – Steady State min Pad (Note 4) RθJA 209 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. BRIDGE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Rectifying Forward Voltage (Note 5) Vfd2 Rectifier leakage current Rectifier Reverse leakage current Min Typ Max Unit Input voltage VLL = ±5 V; The output current of Rectifier Iout = 2 A 0.45 .56 V Ileak Input voltage VLL = 16 V; No Load on the Rectifier output 31 1000 uA Irleak Input voltage VLL = 0 V; The output voltage of the Rectifier Vout = 5 V 21 1000 uA Typ Max Unit 2.2 V ON CHARACTERISTICS 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.2 Negative Threshold Temperature Coefficient VGS(TH) / TJ Drain−to−Source On Resistance (Note 6) RDS(on) ON CHARACTERISTICS Forward Transconductance gFS 4 mV/°C VGS = 10 V, ID = 3.2 A 17 26 VGS = 4.5 V, ID = 3.2 A 23 32 VDS = 10 V, ID = 2.0 A 3.5 S TJ = 25°C 0.79 V TJ = 125°C 0.65 mW DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 6) VSD VGS = 0 V, IS = 2.0 A 6. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Maximum Instantaneous Forward Voltage (Note 7) Parameter VF Min Typ IF = 1.0 A 0.36 IF = 2.0 A 0.41 Maximum Instantaneous Reverse Current IR VR = 20 V 0.04 Max Unit V mA 7. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 100°C unless otherwise specified) Parameter Maximum Instantaneous Forward Voltage (Note 8) Maximum Instantaneous Reverse Current Symbol Test Condition VF IR Min Typ IF = 1.0 A 0.29 IF = 2.0 A 0.36 VR = 20 V 4 Max Unit V mA 8. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G. The test on each individual die is limited to the system package. http://onsemi.com 2 NMLU1210 Figure 1. Typical Application Circuit GND1 and GND2 are not internally connected. The user should make the connection in the PCB design. http://onsemi.com 3 NMLU1210 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 10 1 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 125°C 25°C −55°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Bridge Typical Forward Voltage Drop at Vin . 5 V Figure 3. Bridge Maximum Forward Voltage Drop at Vin . 5 V 1.8 1k ILEAK, OUTPUT LEAKAGE (mA) 1k 100 Maximum 10 1 Typical 0.1 0.01 25 35 45 55 65 75 85 95 105 100 Typical 1 0.1 0.01 25 115 125 Maximum 10 35 45 55 65 75 85 TJ, TEMPERATURE JUNCTION (°C) 105 115 125 Figure 5. Input Leakage at 16 V vs. Junction Temperature 700 40 ID = 2 A TJ = 25°C 600 95 TJ, TEMPERATURE JUNCTION (°C) Figure 4. Output Leakage at 5 V Bias vs. Junction Temperature ID = 2 A TJ = 25°C 35 RDS(on) (mW) 500 RDS(on) (mW) 25°C 125°C 0.1 1.8 10k OUTPUT LEAKAGE (mA) −55°C 400 300 30 25 200 20 100 0 2.0 3.0 4.0 5.0 6.0 7.0 VGS (V) 8.0 9.0 15 2.0 10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 6. FET Typical On−Resistance vs. Gate−to−Source Voltage ( from 3 V to 10 V) Figure 7. FET Typical On−Resistance vs. Gate−to−Source Voltage http://onsemi.com 4 10 NMLU1210 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 100 1 0.1 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 125°C 25°C 1.0 0.1 25°C 0.01 −55°C 0 125°C 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.001 0 0.9 Figure 8. Schottky Typical Forward Current vs. Forward Voltage 5 10 15 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 9. Schottky Typical Reverse Current vs. Reverse Voltage http://onsemi.com 5 25 NMLU1210 PACKAGE DIMENSIONS UDFN8 4x4, 0.8P CASE 517BS ISSUE A A B D PIN ONE REFERENCE ÉÉÉ ÉÉÉ DETAIL A ALTERNATE CONSTRUCTIONS TOP VIEW ÇÇ Ç Ç Ç ÇÇÇ ÇÇ 0.08 C (A3) NOTE 4 SIDE VIEW ÇÇ ÉÉ ÉÉ EXPOSED Cu A DETAIL B 0.10 C L3 L1 L E 0.15 C 0.15 C C 0.10 D2 M MOLD CMPD A1 ÉÉ ÇÇ ÇÇ ALTERNATE CONSTRUCTIONS SEATING PLANE C A B NOTE 5 DETAIL A F/2 4 2X E3 0.10 5 e e/2 F 8X M MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 4.00 BSC 2.10 2.30 0.90 1.10 4.00 BSC 2.50 2.70 1.00 1.20 0.80 BSC 3.55 BSC 0.30 0.50 0.00 0.15 0.13 0.23 RECOMMENDED SOLDERING FOOTPRINT* C A B 4X NOTE 5 E2 8 DIM A A1 A3 b D D2 D3 E E2 E3 e F L L1 L3 A3 DETAIL B A1 D3 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. POSITIONAL TOLERANCE APPLIES TO ALL OF THE EXPOSED PADS. L L3 0.35 2.34 6X 0.60 PACKAGE OUTLINE b 0.10 M C A B 0.05 M C 4.15 2.74 NOTE 3 BOTTOM VIEW 2X 0.80 0.40 1.14 2X 0.80 1.15 1.24 1 DETAIL C 3.69 DIMENSIONS: MILLIMETERS DETAIL C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NMLU1210/D Product Overview NMLU1210: Power MOSFET 20V 3.2A 26 mOhm Dual N-Channel Full Bridge Rectifier UDFN For complete documentation, see the data sheet Product Description Full Bridge Rectifier for Wireless Charging, UDFN 4x4x0.55mm Features • • • • Benefits Full Bridge Rectification Block Low RDS(on) Low Profile UDFN 4x4x0.55mm Package Lead Free and Halide Free • • • • Applications Up of 3.2A of Operation Minimize Conduction Losses Ideal for Space-Constraint Environments RoHS Compliant End Products • AC-DC Rectifications for Wireless Charging • Wireless Chargers Part Electrical Specifications Product NMLU1210TWG Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on N Dua 30 Cha l nne l VGS Ma x (V) VGS 20 2.2 (th) Ma x (V) ID Ma x (A) PD Ma x (W) 4 1.2 rDS( rDS( rDS( on) on) on) 28 17 Ma x@ VGS = 2.5 V (m) Ma x@ VGS = 4.5 V (m) For more information please contact your local sales support at www.onsemi.com Created on: 9/13/2012 Ma x@ VGS = 10 V (m) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) 8.8 Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 476 175 91 UD FN8