New Product SiA850DJ Vishay Siliconix N-Channel 190-V (D-S) MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY ID (A)a 0.95 Qg (Typ.) 4.2 at VGS = 2.5 V 0.9 1.4 nC 17 at VGS = 1.8 V 0.3 VDS (V) RDS(on) (Ω) 190 3.8 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile DIODE PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 190 1.2 at 0.5 A 0.95 APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch for Portable Devices PowerPAK SC-70-6 Dual D K 1 A Marking Code 2 NC 3 D K CDX 0.75 mm K Part # code D 6 Lot Traceability and Date code G 5 2.05 mm S G XXX 2.05 mm S 4 Ordering Information: SiA850DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) A N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Diode) VKA 190 Gate-Source Voltage (MOSFET) VGS ± 16 Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 25 °C 0.95 TC = 70 °C 0.76 TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C IS 0.38b, c 1 Average Forward Current (Diode) IF IFM 2 TC = 25 °C 7 TC = 70 °C 5 TA = 25 °C 1.9b, c TA = 70 °C TC = 25 °C Maximum Power Dissipation (Diode) PD Soldering Recommendations (Peak Temperature)d, e Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 1.2b, c 7.8 TC = 70 °C 5 TA = 25 °C 1.9b, c TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg A 0.95 Pulsed Forward Current (Diode) Maximum Power Dissipation (MOSFET) V 0.47b, c 0.47b, c 0.95 TA = 25 °C Unit 190 1.2b, c - 55 to 150 260 W °C www.vishay.com 1 New Product SiA850DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC RthJA RthJC t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Diode)b, f Maximum Junction-to-Case (Drain) (Diode) Typical 52 12.5 52 12.5 Maximum 65 16 65 16 Unit °C/W Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 190 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 200 mV/°C - 3.0 0.6 1.4 V ± 100 nA VDS = 190 V, VGS = 0 V 1 VDS = 190 V, VGS = 0 V, TJ = 85 °C 10 VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.36 A 1 µA A 3.0 3.8 VGS = 2.5 V, ID = 0.35 A 3.2 4.2 VGS = 1.8 V, ID = 0.15 A 3.5 17.0 VDS = 15 V, ID = 0.36 A 2 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 90 VDS = 100 V, VGS = 0 V, f = 1 MHz tr pF 3 VDS = 95 V, VGS = 10 V, ID = 0.47 A VDS = 95 V, VGS = 4.5 V, ID = 0.47 A 3 4.5 1.4 2.1 0.25 10 VDD = 95 V, RL = 250 Ω ID ≅ 0.38 A, VGEN = 4.5 V, Rg = 1 Ω Ω 2.3 15 15 25 25 40 tf 15 25 td(on) 3 10 tr td(off) tf nC 0.40 f = 1 MHz td(on) td(off) 5 VDD = 95 V, RL = 250 Ω ID ≅ 0.38 A, VGEN = 10 V, Rg = 1 Ω 12 20 10 15 10 15 ns Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 New Product SiA850DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 0.95 1 IS = 0.5 A, VGS = 0 V IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 45 70 ns 45 70 nC 21 ns 24 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. DIODE SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Test Conditions IF = 0.5 A IF = 0.5 A, TJ = 125 °C Min. Typ. Max. 0.82 1.2 0.7 1.0 VR = 190 V 1 VR = 190 V, TJ = 85 °C 10 Unit V µA Body Diode Reverse Recovery Time trr 45 70 ns Body Diode Reverse Recovery Charge Qrr 45 70 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C 21 24 ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 www.vishay.com 3 New Product SiA850DJ Vishay Siliconix DIODE TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 I F - Forward Current (A) I R - Reverse Current (A) 10-6 10-7 VR = 190 V 10-8 10-9 - 50 - 25 0 25 50 75 100 125 150 TJ = 150 °C 0.1 0.01 0.0 TJ = 25 °C 0.2 0.4 0.6 0.8 TJ - Temperature (°C) VF - Forward Voltage (V) Reverse Current vs. Junction Temperature Forward Diode Voltage 1.0 1.2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case www.vishay.com 4 Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 New Product SiA850DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 0.5 0.9 VGS = 5 V thru 2 V 0.4 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 TC = - 55 °C 0.3 0.2 TC = 25 °C 0.2 0.1 0.1 TC = 125 °C VGS = 1 V 0.0 0 1 2 3 4 5 6 7 8 9 0.0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 150 120 5 VGS = 1.8 V 4 VGS = 2.5 V VGS = 4.5 V 3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 Ciss 90 60 30 Coss 2 0.0 0 0.2 0.4 0.6 0.8 1.0 0 20 30 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 50 2.4 ID = 0.47 A VDS = 95 V 2.0 6 VDS = 152 V 4 2 VGS = 4.5 V; 2.5 V; ID = 0.36 A (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 ID - Drain Current (A) 10 0 0.0 Crss 1.6 1.2 VGS = 1.8 V; ID = 0.15 A 0.8 0.5 1.0 1.5 2.0 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 2.5 3.0 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 New Product SiA850DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 8 1 ID = 0.36 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 7 TJ = 150 °C 0.1 TJ = 25 °C TJ = 125 °C 6 5 4 TJ = 25 °C 3 0.01 0.0 2 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 1.4 1.3 15 Power (W) VGS(th) (V) 1.2 1.1 ID = 250 µA 1.0 0.9 10 5 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 Limited by RDS(on)* I D - Drain Current (A) 1 100 µs 0.1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 6 Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 New Product SiA850DJ Vishay Siliconix 1.2 8 0.9 6 Power Dissipation (W) I D - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.6 4 2 0.3 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 www.vishay.com 7 New Product SiA850DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68909. www.vishay.com 8 Document Number: 68909 S09-0137-Rev. B, 02-Feb-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1