Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC463 v10.1010 AMPLIFIERS - LOW NOISE - CHIP 1 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC463 is ideal for: Gain: 14 dB • Telecom Infrastructure Noise Figure: 2.5 dB @ 10 GHz • Microwave Radio & VSAT P1dB Output Power: +19 dBm @ 10 GHz • Military & Space Supply Voltage: +5V @ 60 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.05 x 1.29 x 0.1 mm Functional Diagram General Description The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Vgg2: Optional Gate Bias for AGC Electrical Specifi cations, TA = +25° C, Vdd= 5V, Idd= 60 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 12 Typ. Max. Min. 6.0 - 18.0 15 12 14 12 Max. 14 dB ±1.0 Gain Variation Over Temperature 0.015 0.025 0.015 0.025 0.015 0.025 Noise Figure 3.0 4.0 2.5 3.7 3.5 4.0 Input Return Loss 12 Output Power for 1 dB Compression (P1dB) 11 16 ±0.15 15 13 dB 14 12 19 16 11 Units GHz Gain Flatness Output Return Loss ±0.15 Typ. 18.0 - 20.0 dB/ °C dB dB 10 dB 14 dBm Saturated Output Power (Psat) 21 20 19 dBm Output Third Order Intercept (IP3) 31 28 26 dBm Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 60 80 60 80 60 80 mA * Adjust Vgg1 between -1.5 to -0.5V to achieve Idd= 60 mA typical. 1-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463 v10.1010 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 20 10 16 S21 S11 S22 -10 -20 12 +25C +85C -55C 8 4 -30 0 0 4 8 12 16 20 24 0 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 10 12 14 16 18 20 22 Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) +25C +85C -55C -5 RETURN LOSS (dB) 8 FREQUENCY (GHz) -10 -15 -20 +25C +85C -55C -5 -10 AMPLIFIERS - LOW NOISE - CHIP 20 0 1 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss -15 -25 -30 -20 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 FREQUENCY (GHz) 10 12 14 16 18 20 22 18 20 22 Noise Figure vs. Temperature Reverse Isolation vs. Temperature 10 0 -10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 8 FREQUENCY (GHz) +25C +85C -55C -20 -30 -40 +25C +85C -55C 6 4 2 -50 0 -60 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-2 HMC463 v10.1010 1 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz P1dB vs. Temperature Psat vs. Temperature 25 +25C +85C -55C 22 Psat (dBm) P1dB (dBm) 22 19 16 13 19 +25C +85C -55C 16 13 10 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 6 12 14 16 18 20 22 5 22 21 GAIN (dB), P1dB (dBm) 32 IP3 (dBm) 10 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 35 29 26 +25C +85C -55C 20 4.5 Noise Figure Gain P1dB 20 4 19 3.5 18 3 17 2.5 16 2 15 1.5 14 1 13 0.5 0 12 0 2 4 6 8 10 12 14 16 18 20 22 4.5 4.75 FREQUENCY (GHz) 5 5.25 5.5 Vdd (V) Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz Noise Figure & Supply Current vs. Control Voltage @ 10 GHz 32 70 5 60 4 50 3 40 2 28 24 Idd (mA) 20 16 12 8 Gain P1dB IP3 4 0 -1.2 30 Noise Figure 1 Idd 0 20 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg2 (V) 0.2 0.4 0.6 0.8 1 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 Vgg2 (V) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) GAIN (dB), P1dB (dBm), IP3 (dBm) 8 FREQUENCY (GHz) Output IP3 vs. Temperature 23 1-3 4 FREQUENCY (GHz) NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - CHIP 25 HMC463 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 1 GAIN (dB) Gain @ Several Control Voltages 20 18 Vgg 2 = -1.0V Vgg 2 = -0.9V Vgg 2 = -0.6V Vgg 2 = -0.4V Vgg 2 = 0V 16 14 12 10 8 6 Vgg 2 = -1.1V 4 2 Vgg 2 = -1.2V 0 -2 Vgg 2 = -1.3V -4 -6 -8 -10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Absolute Maximum Ratings Typical Supply Current vs. Vdd Vdd (V) Idd (mA) Drain Bias Voltage (Vdd) +9 V Gate Bias Voltage (Vgg1) -2 to 0 Vdc +4.5 58 Gate Bias Current (Igg1) 2.5 mA +5.0 60 Gate Bias Voltage (Vgg2)(AGC) (Vdd -9) Vdc to +2 Vdc +5.5 62 RF Input Power (RFIN)(Vdd = +5 V) +18 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 20.6 mW/°C above 85 °C) 1.85 W Thermal Resistance (channel to die bottom) 48.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LOW NOISE - CHIP v10.1010 1-4 HMC463 v10.1010 Outline Drawing AMPLIFIERS - LOW NOISE - CHIP 1 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1-5 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD 8. OVERALL DIE SIZE ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463 v10.1010 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vgg2 Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required. 3 Vdd Power supply voltage for the amplifier. External bypass capacitors are required 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5 Vgg1 Gate control for amplifier. Adjust to achieve Idd= 60 mA. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LOW NOISE - CHIP 1 Pad Descriptions 1-6 HMC463 v10.1010 Assembly Diagram AMPLIFIERS - LOW NOISE - CHIP 1 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 1-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab AMPLIFIERS - LOW NOISE - CHIP v10.1010 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-8