RB491D Diodes Schottky barrier diode RB491D !External dimensions (Units : mm) !Applications Low-power rectification For switching power supply +0.2 1.1 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 !Construction Silicon epitaxial planar +0.1 0.15 −0.06 (All leads have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 25 V DC reverse voltage VR 20 V IF 1.0 A IFSM 3 A Junction temperature Tj 125 ˚C Storage temperature Tstg −40∼+125 ˚C DC forward current Peak forward surge current ∗ ∗ 60Hz for 1 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Forward voltage VF − − 0.45 V IF=1.0A Reverse current IR − − 200 µA VR=20V Parameter Note) ESD sensitive product handling required. Unit Conditions 0.3~0.6 +0.2 D2E +0.1 0.4 −0.05 0~0.1 2.8±0.2 !Features 1) Small surface mounting type. (SMD3) 2) Ultra low VF. (VF=0.40V Typ. at 1A) 3) IF=1.0A guaranteed despite the size. 1.6 −0.1 0.95 0.95 RB491D Diodes !Electrical characteristic curves (Ta=25°C) 10m −25 100m ˚C 1 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 100 Ta=125˚C 10 75˚C 1 25˚C 100µ 10µ −25˚C 1µ 0.1µ 0 0.6 10 D=0.5 sine D=0.3 D=0.2 D=0.1 0.4 D=0.05 0.3 IF 0.2 IO Tp T D=Tp/T Tj=Tj Max. 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.4 Forward power dissipation characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) FORWARD POWER DISSIPATION : PF (W) DC D=0.8 0.5 30 40 50 60 70 1.5 IF IO DC D=0.8 Tp T D=Tp/T VR=VRM /2 sine 1.0 D=0.5 D=0.3 D=0.2 0.5 D=0.1 D=0.05 0 0 25 50 75 100 1000 100 10 1 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE : VR (V) Fig.2 Reversecharacteristics Fig.1 Forward characteristics 0.6 20 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) 0.7 TERMINAL CAPACITANCE : CT (pF) REVERSE CURRENT : IR (mA) f=1MHz Ta= 12 5˚ C 75 ˚C 25 ˚C FORWARD CURRENT : IF (A) 10000 1000 10 125 AMBIENT TEMPERATURE : Ta (˚C) Fig.5 Derating curve (IO - Ta) Fig.3 Capacitance between terminals characteristics