RB063L-30 Diodes Schottky barrier diode RB063L-30 zExternal dimensions (Units : mm) zApplications High frequency rectification For switching power supply 5 5 4.5±0.2 CATHODE MARK 0.1 +0.02 −0.1 5.0±0.3 zFeatures 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) VRM=30V guaranteed. 1.2±0.3 1.5±0.2 2.0±0.2 2.6±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Date of manufacture EX. 1999.12 → 9, C zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 30 V DC reverse voltage VR 30 V Mean rectifying current ∗ IO 2 A Peak forward surge current (60Hz·1 ) IFSM 70 A Junction temperature Tj 125 °C Storage temperature Tstg −40∼+125 °C ∗ 180° half sine wave when mounted on glass epoxy PCBs. zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Forward voltage VF − − 0.395 V IF=2.0A Reverse current IR − − 200 µA VR=30V Parameter Unit Conditions RB063L-30 Diodes zElectrical characteristic curves (Ta=25°C) 10 1000 100m 100m 10m 1m 0 0.1 0.2 0.3 0.4 Ta=25°C 10µ 10 T D=Tp / T VR=VRM / 2 DC D=0.8 D=0.5 sine D=0.3 D=0.2 D=0.1 D=0.05 0 0 25 50 75 100 125 IF IO Tp 4.0 DC 3.0 D=0.8 D=0.5 sine D=0.3 D=0.2 D=0.1 1.0 D=0.05 0 0 25 VR Tj=Tj Max. 0 0.20 Tp T Tj=Tj Max. D=Tp / T 0.15 VR DC 0.10 sine 0.05 D=0.8 2 4 6 8 75 100 125 10 12 14 16 18 20 REVERSE VOLTAGE : VR (V) Fig.7 Reverse power dissipation characteristics 5.0 IF IO 4.0 Tp T D=Tp / T VR=VRM / 2 DC 3.0 D=0.8 D=0.5 sine 2.0 D=0.3 D=0.2 D=0.1 D=0.05 1.0 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.8 Derating curve (IO - Ta) (when mounted on glass epoxy PCBs) 20 30 Fig.3 Capacitance between terminals characteristics 1.4 DC D=0.8 1.2 D=0.5 sine D=0.3 1.0 D=0.2 0.8 D=0.1 D=0.05 0.6 IF 0.4 IO Tp 0.2 0 0 T D=Tp / T Tj=Tj Max. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.5 Derating curve (IO - TL) (When mounted on alumina PCBs) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) 0.30 D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 50 LEAD TEMPERATURE : TL (°C) Fig.4 Derating curve (IO - Ta) (When mounted on alumina PCBs) 0.25 T D=Tp / T VR=VRM / 2 2.0 10 REVERSE VOLTAGE : VR (V) FORWARD POWER DISSIPATION : PF (W) Tp 100 0 40 5.0 AMBIENT TEMPERATURE : Ta (°C) REVERSE POWER DISSIPATION : PR (W) 30 Fig.2 Reverse characteristics 4.0 0 0 20 Fig.1 Forward characteristics IO 1.0 100µ REVERSE VOLTAGE : VR (V) IF 2.0 Ta=75°C 1m FORWARD VOLTAGE : VF (V) 5.0 3.0 10m 1µ 0 0.5 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) C 2 =1 Ta TERMINAL CAPACITANCE : CT (pF) 5° REVERSE CURRENT : IR (A) 1 Ta =7 5° Ta= C 25 °C FORWARD CURRENT : IF (A) Ta=125°C 125 Fig.6 Forward power dissipation characteristics