1SR159-200 Diodes Rectifier diode 1SR159-200 !External dimensions (Units: mm) !Applications High frequency rectification. For switching power supply. 6 3 3 4 4.5±0.2 !Features 1) Small surface mounting type. (PMDS) 2) Low VF. (VF=0.90V Typ. at 1A) 3) High speed. (trr=23ns Typ.) 0.1 2.0±0.2 2.6±0.2 ROHM : PMDS EIAJ : − JEDEC : SOD-106 !Construction Silicon epitaxial planar 1 2 Date code EX. 1999.1→9.1 !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Absolute peak reverse voltage VRSM 200 V Peak reverse voltage VRM 200 V IO 1 A Mean rectifying current∗1 Peak forward surge current∗2 IFSM 20 A Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 When mounted on an alumina PCB board ∗2 60 Hz for 1 !Electrical characteristics (Ta=25°C) Parameter +0.02 −0.1 Symbol Min. Typ. Max. Unit Forward voltage VF − − 0.98 V IF=1.0A Conditions Reverse current IR − − 10 µA VR=200V Reverse recovery time trr − − 50 ns IF =IR =100mA 5.0±0.3 1.2±0.3 1.5±0.2 CATHODE MARK 1SR159-200 Diodes !Electrical characteristic curves (Ta=25°C) REVERSE CURRENT : IR (µA) 0.10 0.01 Ta=125˚C Ta=75˚C Ta=25˚C 0.2 0.4 Ta=75˚C 10.0 1.0 Ta=25˚C 0.6 0.8 0.1 50 1.0 100 150 200 sin 0.5 0.2 1.0 0.1 D=0.05 IF 0.5 IO Tp T 0.4 0.8 1.2 Tp T 1.6 2.0 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.2 Reverse characteristics Fig.1 Forward characteristics Fig.3 Power dissipation curves 50 SURGE FORWARD CURRENT : IFSM (A) 1.0 RE 0.8 E TIV SIS AN 0.6 DU TI CI IN PA D CA 0.4 AD LO AD LO 0.2 IVE CT VE AVERAGE RECTIFIED CURRENT : IO (A) 0.3 0 0 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) 0 0 DC 0.8 1.5 d= 25 50 100 150 200 40 30 20 10 0 1 P=50% 2 5 10 20 50 100 AMBIENT TEMPERATURE : Ta (˚C) CYCLES (60 Hz) Fig.4 Derating curve Fig.5 Maximum peak forward surge current characteristics REVERSE RECOVERY TIME : trr (ns) FORWARD CURRENT : IF (A) Ta=125˚C 100.0 1.00 0.00 0.0 POWER DISSIPATION : Pd (W) 1000.0 10.00 0.1 IR 0.25 IR 10 5 0 0 0.5 1.0 1.5 FORWARD CURRENT IF (A) Fig.6 Reverse recovery time characteristics