MBR10H150CT, MBRF10H150CT, SB10H150CT-1 Datasheet

MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
ITO-220AB
TO-220AB
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
1
2
3
1
2
• High frequency operation
3
• Solder dip 275 °C max.10 s, per JESD 22-B106
MBRF10H150CT
MBR10H150CT
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
1
2
MECHANICAL DATA
3
Case: TO-220AB, ITO-220AB, TO-262AA
SB10H150CT-1
PIN 1
PIN 2
PIN 3
CASE
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
Polarity: As marked
VRRM
150 V
IFSM
160 A
Mounting Torque: 10 in-lbs maximum




VF
0.72 V
TJ max.
175 °C
Package
TO-220AB, ITO-220AB, TO-262AA
Diode variations
Common cathode
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current (fig.1)
total device
per diode
IF(AV)
10
5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
160
A
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 waveform)
ERSM
10
mJ
EAS
11.25
mJ
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
VAC
1500
V
Non-repetitve avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
Revision: 11-Dec-14
Document Number: 88779
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage 
per diode
Maximum reverse current per diode at
working peak reverse voltage
VF (1)
TYP.
MAX.
IF = 5 A
TEST CONDITIONS
TJ = 25 °C
-
0.88
UNIT
IF = 5 A
TJ = 125 °C
-
0.72
IF = 10 A
TJ = 25 °C
-
0.96
IF = 10 A
TJ = 125 °C
-
0.80
TJ = 25 °C
-
5.0
μA
TJ = 125 °C
-
1.0
mA
IR (2)
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
2.4
4.5
2.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
MBR10H150CT-E3/45
2.06
45
50/tube
DELIVERY MODE
Tube
ITO-220AB
MBRF10H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB10H150CT-1E3/45
1.58
45
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
200
12
Peak Forward Surge Current (A)
Average Forward Current (A)
MBR, MBRB
10
MBRF
8
6
4
2
0
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 11-Dec-14
Document Number: 88779
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 75 °C
1
1000
100
TJ = 25 °C
10
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
0.1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10 000
TJ = 175 °C
1000
TJ = 125 °C
100
10
TJ = 75 °C
1
TJ = 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
10
MBRF
MBR, MBRB
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 11-Dec-14
Document Number: 88779
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.408 (10.36)
0.392 (9.96)
0.138 (3.50)
0.122 (3.10)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331(8.40)
TYP.
1
0.634 (16.10)
0.618 (15.70)
PIN
2 3
0.118 (3.00)
TYP.
0.638 (16.20)
0.598 (15.20)
0.630 (16.00)
0.614 (15.60)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
1
0.264 (6.70)
0.248 (6.50)
PIN
2 3
0.270 (6.88)
0.255 (6.48)
0.320 (8.12)
0.304 (7.72)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.633 (16.07)
0.601 (15.67)
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
1.29 (3.28)
DIA.
1.21 (3.08)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.039 (1.00)
0.024 (0.60)
0.024 (0.60)
0.018 (0.45)
0.058 (1.47)
MAX.
0.100
(2.54) TYP.
0.200 (5.08)
TYP.
0.024 (0.60)
0.018 (0.45)
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.370 (9.40)
0.354 (9.00)
1
PIN
2 3
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) TYP.
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) TYP.
Revision: 11-Dec-14
Document Number: 88779
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000