SCS521G(SOD 723)

WILLAS
FM120-M+
THRU
SCS521G
FM1200-M+
100mA
Surface
Mount
Schottky
Barrier
Rectifiers-30V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-723 SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
zApplication
• Low power loss, high efficiency.
• High current
Rectifying
smallcapability,
power low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
zFeatures
Lead-free parts meet environmental standards of
•
1) Ultra
small mold type.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
2) • Low
F
RoHSVproduct
for packing code suffix "G"
Halogen
free product for packing code suffix "H"
3) High
reliability
SOD - 723
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
zConstruction
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1
CATHODE
0.031(0.8) Typ.
Silicon epitaxial planer
2
ANODE
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
z We declare that the material of product
Mounting Position
:
Any
•compliance
with RoHS requirements.
is available
•Pb-Free
Weight : package
Approximated
0.011 gram
RoHS product for packing code suffix ”G”
MAXIMUM
RATINGS
AND
ELECTRICAL
CHARACTERISTICS
Halogen
free product
for packing
code
suffix “H”
Ratings at 25℃ ambient temperature unless otherwise specified.
Moisture Sensitivity Level 1
Single phase half wave, 60Hz, resistive of inductive load.
Polarity: Color band denotes cathode end
For capacitive load, derate current by 20%
zAbsolute maximum ratings (Ta=25°C)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
RATINGS
Limits
Parameter
Symbol12
Unit
Marking Code
13
14
15
16
Reverse
voltage
(DC)
30
V
30
40
50
60V
Maximum Recurrent Peak Reverse Voltage
VRRM R 20
verage
rectified
forward
current
100
A
mA
21
28
35
42
Maximum RMS Voltage
VRMS Io 14
(60Hz・1cyc)
For
ward
current
surge
peak
500
I
mA
FSM
Maximum DC Blocking Voltage
20
30
40
50
60
VDC
125
Junction temperature
Tj
℃
Maximum Average Forward Rectified Current
IO
1.0
-40 to +125
Operating/Storage temperature
Tstg
℃ Peak Forward Surge Current 8.3 ms single half sine-wave
zElectrical
characteristics
(Ta=25°C)
superimposed
on rated
load (JEDEC method)
Typical Thermal Parameter
Resistance (Note 2)
Symbol
VF
ward Capacitance
voltage
TypicalFor
Junction
(Note 1)
Operating
Temperature
Reverse
currentRange
IR
Storage Temperature Range
18
80
10
100
115
150
120
200
56
70
105
140
80
100
150
200
30
IFSM
Min.
RΘJA
C- J
Typ.
-
T-J
-
TSTG
FM180-MH FM1100-MH FM1150-MH FM1200-MH
Max.
0.35
-55 to +125
10
Unit
V
µA
Conditions
40
IF=10mA120
VR=10V
-55 to +150
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum
z Forward Voltage at 1.0A DC
zDOevice M ark ing
Maximum Average Reverse Current at @T A=25℃
Device
Rated DC Blocking Voltage
NOTES:
SCS521G
Marking
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
F
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS521G
FM1200-M+
100mA
Surface
Mount
Schottky
Barrier
Rectifiers-30V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-723 SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
Electrical characteristic curves (Ta=25°C)
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
10000
Ta=25℃
Ta=-25℃
10
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
20
Method 2026
• 280
Polarity : Indicated by cathode band
Mounting Position : Any
• 270
• Weight : Approximated 0.011 gram
260
10
AVE:2.017uA
16Dimensions in inches and (millimeters)
15
14
13
12
AVE:17.34pF
PEAK SURGE
FORWARD CURRENT:IFSM(A)
15
8.3ms
Maximum DC Blocking Voltage
10
Maximum Average Forward Rectified
Current
AVE:3.90A
Peak Forward5 Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VRRM
12
20 Ifsm
VRMS
14
VDC
20
5
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
30
28
40
10
35
42
56
50
60
5
70
105
140
100
150
200
10
100
+150
0.1
0.50
0.06
IR
D=1/2
DC
Sin(θ=180)
0.04
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.08
300us
0.9
0.85
0.92
0.5
0.06
10
D=1/2
0.04
DC
Sin(θ=180)
0
0
1000
0.70
0.02
0.02
time
1ms to
2- Thermal Resistance From Junction
Ambient
TIME:t(s)
Rth-t CHARACTERISTICS
120
200
TIME:t(ms)
-55 to
IFSM-t CHARACTERISTICS
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
IF=100mA
10
115
150
- 65 to +175
VF
Mounted on epoxy board
IM=10mA
80
40
120
1
100
t
10
100
1.0
30
NUMBER OF CYCLES
-55 to +125
IFSM-CYCLE CHARACTERISTICS
0.08
Rth(j-c)
@T A=125℃
Rated DC Blocking Voltage
2012-06
18
80 Ifsm
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
0.1
16
60
0
0.1
CHARACTERISTICS
Rth(j-a)
Maximum Forward Voltage at 1.0A DC
10
0.001
10
15
50
TSTG
NOTES:
8.3ms
21 8.3ms
1cyc
IFSM
TJ
IFSM DISRESION MAP
14
40
IO
0RΘJA
1
CJ
0
Typical Thermal
Resistance (Note 2)
13
30
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
Maximum RMS Voltage
100
Ct DISPERSION MAP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
IfsmVoltage1cyc
Maximum Recurrent Peak Reverse
PEAK SURGE
FORWARD CURRENT:IFSM(A)
17
0.031(0.8) Typ.
10
0
20
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
18
11
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1000
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
19
AVE:270.2mV
RATINGS
15
20
15
5
10
0.031(0.8) Typ.
Ta=25℃
VR=10V
n=30pcs
20
Marking Code
2012-11
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
290
0
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
30
Case : Molded plastic, SOD-123H
• 300
Ta=25℃
,
IF=10mA
• Terminals :Plated terminals,
solderable 25
per MIL-STD-750
n=30pcs
250
0.071(1.8)
0.056(1.4)
30
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
60Hz, resistive of inductive load.
VF DISPERSION MAP
IR DISPERSION MAP
For capacitive load, derate current by 20%
0.012(0.3) Typ.
10
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Mechanical data
FORWARD VOLTAGE:VF(mV)
Ta=75℃
1
0
Halogen free product for packing code suffix "H"
f=1MHz
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"0.01
• 0.001
0
100
200
300
400
500
600
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
board space.
Ta=125℃
power loss, high efficiency.
• Low
100
1000
current capability, low forward voltage drop.
• HighTa=75℃
10 surge capability.
100
• High
Ta=-25℃
for
overvoltage
protection.
• Guardring
1
10
• Ultra high-speed switching.
Ta=25℃
0.1
1
epitaxial planar chip, metal silicon
junction.
• Silicon
parts meet environmental standards
of
• Lead-free
0.01
0.1
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
1000
optimize
SOD-123H
100
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS521G
FM1200-M
100mA
Surface
Mount
Schottky
Barrier
Rectifiers-30V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-723 SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.1
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Sin(θ=180)
0.146(3.7)
0.130(3.3)
0.3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
• Low power loss, high efficiency.
0.3
low forward voltage drop.
• High current capability,
Io
0A
• High surge capability.
0V
VR
• Guardring for overvoltage protection. t
D=t/T
0.2
VR=15V
• Ultra high-speed switching.
DC
T Tj=125℃
• Silicon epitaxial planar chip, metal silicon junction.
D=1/2
• Lead-free parts meet environmental standards of
0A
0V
0.2
t
DC
T
VR
D=t/T
VR=15V
Tj=125℃
0.071(1.8)
0.056(1.4)
D=1/2
0.1
Sin(θ=180)
Halogen free product for packing code suffix "H"
Mechanical data
0
0.012(0.3) Typ.
Io
0
0
25
50
75
100
0
125
AMBIENT TEMPERATURE:Ta(℃)
retardant
• Epoxy : UL94-V0 rated flame
Derating Curve゙(Io-Ta)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
25
50
75
100
125
0.040(1.0)
0.024(0.6)
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
SOD−723
RATINGS
.043(1.10)
Maximum Recurrent
Peak Reverse Voltage
.035(0.90)
.026(0.65)
.021(0.55)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
VRRM
12
20
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
superimposed on rated load (JEDEC method)
CJ
Operating Temperature Range
TJ
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
NOTES:
120
200
42
56
70
105
140
60
80
100
150
200
1.0
30
40
.026(0.65)
120
-55 to +150
.017(0.45)
-55 to +125
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
115
150
TSTG
.007(0.18)
.003(0.08)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
10
100
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
18
80
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
16
60
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
.014(0.35)
.009(0.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
.059(1.50)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.051(1.30)
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS521G
FM1200-M+
100mA
Surface
Mount
Schottky
Barrier
Rectifiers-30V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-723
Package PACKAGE
SOD-123+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
SCS521G ‐T
Tape&Reel: 4 Kpcs/Reel capability. G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
on rated load (JEDEC method)
superimposed
40
Typical WILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating
Temperature Range
TJ
- 65 to +175
Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range
TSTG
or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.