RB557W Diodes Schottky barrier diode RB557W zApplications General rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 0.5 0.5 0.3±0.1 0.05 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability 0.7 1.6±0.2 0.15±0.05 0.7 0.6 1.3 0.6 0.55±0.1 0.5 0.5 1.0±0.1 zConstruction Silicon epitaxial planar 0～0.1 (1) (2) 0.7 0.1Min 0.2±0.1 -0.05 1.6±0.2 0.8±0.1 (3) 0.7±0.1 EMD3 zStructure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) zTaping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 0.3±0.1 8.0±0.2 0～0.1 1.8±0.1 5.5±0.2 1.8±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ (*1) Rating of per diode zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 Min. - Typ. - Max. 0.35 Unit V VF2 - - 0.49 V IR - - 10 µA Conditions IF=10mA IF=100mA VR=10V 1/3 RB557W Diodes zElectrical characteristic curves Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 0.001 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 10 20 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 270 260 Ta=25℃ VR=10V n=30pcs 25 REVERSE CURRENT:IR(uA) 280 20 15 10 AVE:2.017uA 5 14 13 12 AVE:17.34pF 10 AVE:3.90A 5 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 0.1 100 Per diode time FORWARD POWER DISSIPATION:Pf(W) IF=10mA 10 100 Per diode 0.08 0.08 Rth(j-c) 10 0.1 0.1 Rth(j-a) Mounted on epoxy board 1 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP D=1/2 0.06 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 15 Ct DISPERSION MAP 10 1cyc Ifsm 1ms 16 IR DISPERSION MAP 20 IM=1mA 17 10 VF DISPERSION MAP 100 18 11 0 250 20 Ta=25℃ f=1MHz VR=0V n=10pcs 19 AVE:270.2mV 1000 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 30 Ta=25℃ IF=10mA n=30pcs 290 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) f=1MHｚ 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 10000 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1000 DC 0.04 0.06 D=1/2 0.04 DC Sin(θ＝180) 0.02 0.02 300us 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2/3 RB557W Diodes 0.3 0.3 Io 0A 0V t 0.2 DC T Per diode VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode t DC 0.2 Io 0A 0V T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1