WILLAS FM120-M+ BCW66GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon • Batch process design, excellent power dissipation offers better reverse current and thermal resistance. ƽ We declare that leakage the material of product surface mounted application in order to • Low profilewith compliance RoHS requirements. optimize board space. Pb-Free package is available Low product power loss, high efficiency. •RoHS for packing code suffix ”G” High current capability, low forward voltage drop. •Halogen free product for packing code suffix “H” capability. • High surge Moisture Sensitivity Level 1 • Guardring for overvoltage protection. DEVICE MARKING AND ORDERING INFORMATION • Ultra high-speed switching. Device Marking Shipping epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of •BCW66GLT1 EG 3000/Tape&Reel MIL-STD-19500 /228 MAXIMUM RATINGS for packing code suffix "G" • RoHS product Halogen free product for packing code suffix "H" Rating Symbol Value Unit SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT–23 0.071(1.8) 0.056(1.4) 3 COLLECTOR Mechanical data Collector–Emitter Voltage V CEO 45 Vdc • Epoxy : UL94-V0 rated flame retardant Collector–Base Voltage V CBO 75 Vdc • Case : Molded plastic, SOD-123H , Emitter–Base EBO Vdc • Terminals Voltage :Plated terminals, Vsolderable per7.0 MIL-STD-750 IC 800 Max Unit PD 225 mW ELECTRICAL CHARACTERISTICS Pr el Derate above 25°C temperature unless otherwise specified. 1.8 mW/°C Ratings at 25℃ ambient Resistance, Junction to Ambient SingleThermal phase half wave, 60Hz, resistive of inductive load. R θJA 556 °C/W Total Device For capacitive load,Dissipation derate current by 20% PD 300 mW Alumina Substrate, (2) TA = 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Derate above 25°C 2.4 mW/°C Marking Code 12 13 14 15 16 18 10 115 120 Thermal Resistance, Junction to Ambient R 30417 40 °C/W50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM θJA 20 Junction and Storage Temperature TJ , Tstg –55 to +150 °C 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS 20 30 unless otherwise noted.) ELECTRICAL CHARACTERISTICS (TA = 25°CVDC IO Characteristic Symbol Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Min RΘJA V (BR)CEO CJ 45 Maximum Average Forward Rectified Current 40 50 60 Typ Max — — 40 120 OFF CHARACTERISTICS Breakdown TypicalCollector–Emitter Thermal Resistance (Note 2) Voltage Typical(IJunction Capacitance (Note 1) C = 10mAdc, I B= 0 ) Collector–Emitter Breakdown Voltage Storage Temperature Range (IC = 10 µAdc, V EB = 0 ) V (BR)CES TSTG Emitter–BaseCHARACTERISTICS Breakdown Voltage E C Maximum Average Reverse Current at @T A=25℃ Collector Cutoff Current Rated DC Blocking Voltage (VCE = 45 Vdc, IE = 0 ) 75 Unit Vdc @T A=125℃ 5.0 0.50 — — 0.70 Vdc 0.85 I CES IR 0.92 10 20 nAdc — — 20 µAdc (V EB= 4.0 Vdc, I C = 0) — — 20 nAdc (V EB= 7.0 Vdc, I C = 0) (3) — — 100 nAdc NOTES:(VCE = 45 Vdc, IE = 0 ) (TA=150°C) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.5 — 2- Thermal Resistance From Junction to Ambient 200 — - 65 to +175 Vdc — Emitter Cutoff Current 150 -55 to +150 — 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH V (BR)EBO VF Maximum Voltage at 1.0A DC (I =Forward 10 µAdc, I = 0) -55 to +125 TJ Operating Temperature Range 80 1.0 30 superimposed on rated load (JEDEC method) EMITTER mAdc Symbol Maximum DC Blocking Voltage 0.031(0.8) Typ. 2 Dimensions in inches and (millimeters) Total Device Dissipation FR– 5 Board, (1) TA = 25°C MAXIMUM RATINGS AND 0.031(0.8) Typ. im ina • Polarity : Indicated by cathode band THERMAL CHARACTERISTICS Position : Any • Mounting Characteristic • Weight : Approximated 0.011 gram BASE ry Method 2026 Collector Current — Continuous 0.040(1.0) 0.024(0.6) 1 I EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Added IEBO test to guarantee quality for oxide defects 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:*LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to (TA = 25°C unless otherwise noted) (Continued) ELECTRICAL optimizeCHARACTERISTICS board space. high efficiency. • Low power loss,Characteristic Symbol • High current capability, low forward voltage drop. ON CHARACTERISTICS surge capability. • High DC Current Gain hFE for overvoltage protection. • Guardring ( IC= 100 µAdc, VCE = 10 Vdc ) • Ultra high-speed switching. ( IC= 10 mAdc, VCE = 1.0 Vdc ) epitaxial planar chip, metal silicon junction. • Silicon ( IC= 100 mAdc, VCE = 1.0 Vdc ) parts meet environmental standards of • Lead-free Min fT Turn–On Time t on RATINGS AND ELECTRICAL (I B1= I MAXIMUM B2= 15 mAdc,I C = 150mAdc, R L = 150Ω) Ratings atTurn–Off 25℃ ambient Time temperature unless otherwise specified. t off Single phase half wave, 60Hz,Cresistive of inductive load. (I B1= I B2= 15 mAdc,I = 150mAdc, R L = 150Ω) For capacitive load, derate current by 20% — — 110 160 — — — 400 60 — — 100 — — — 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MHz0.040(1.0) 0.024(0.6) — 12 pF — 80 pF 0.031(0.8) Typ. — 0.031(0.8) Typ. Dimensions in inches and (millimeters) — — 10 dB — — CHARACTERISTICS 100 ns 400 ns — — SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Pr el RATINGS Marking Code 50 im ina • • • Weight CHARACTERISTICS : Approximated 0.011 gram SWITCHING Unit ry V CErated = 10 flame Vdc, f = 100 MHz) (I C = 20mAdc, : UL94-V0 retardant • Epoxy Output Capacitance • Case : Molded plastic, SOD-123H C obo , (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) • Terminals :Plated terminals, solderable per MIL-STD-750 Input Capacitance Method 2026 C ibo (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Polarity : Indicated by cathode band Noise Figure NF Mounting Position : Any (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz) Max 0.146(3.7) 0.130(3.3) — ( IC= 300 mAdc, V/228 CE = 2.0 Vdc ) MIL-STD-19500 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SMSMALL–SIGNAL CHARACTERISTICS Mechanical data Product Current–Gain — Bandwidth Typ Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:*LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) standards of • Lead-free parts meet environmental 0.146(3.7) 0.130(3.3) .063(1.60) .047(1.20) .006(0.15)MIN. 0.012(0.3) Typ. MIL-STD-19500 /228 "G" • RoHS product for packing code suffix .106(2.70) Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram im ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .070(1.78) RATINGS .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO .004(0.10)MAX. IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range TSTG CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: 40 120 -55 to +125 -55 to +150 - 65 to +175 .020(0.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .012(0.30) VF Maximum Forward Voltage at 1.0A DC 1.0 30 .055(1.40) .035(0.89) 0.031(0.8) Typ. .083(2.10) Method 2026 0.031(0.8) Typ. .110(2.80) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:*LT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, low (1) forward voltage drop. BCW66GLT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical WILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range TSTG or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.