WILLAS FM120-M+ DTA124EE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Pb-Free package is available for overvoltage protection. • Guardring Ultra high-speed switching. • RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free • Epoxy meets UL 94 V-0 MIL-STD-19500 /228flammability rating product for packing • RoHS • Moisure Sensitivity Level 1 code suffix "G" • Built-in Halogen bias resistors enable the configuration free product for packing code suffix "H"of an inverter circuit without connecting external Mechanical datainput resistors • The bias resistors consist of thin-film resistors with complete : UL94-V0 rated flame retardant • Epoxy isolation to allow negative biasing of the input. They also have the SOD-123H • Caseof: Molded advantage almost plastic, completely eliminating parasitic effects. , • Terminals :Plated terminals, MIL-STD-750 • Only the on/off conditions need tosolderable be set forper operation, making Method 2026 device design easy • Polarity : Indicated by cathode band Absolute• maximum ratings @ 25к Mounting Position : Any Symbol • Weight : Approximated Parameter 0.011 gram Min Typ Max Unit 0.146(3.7) 0.130(3.3) Features SOT-523 0.071(1.8) 0.056(1.4) .035(0.90) .028(0.70) .067(1.70) .059(1.50) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .014(0.35) .010(0.25) 0.031(0.8) Typ. .004(0.10)MIN. .043(1.10) .035(0.90) Dimensions in inches and (millimeters) Marking Code Electrical Characteristics 25к Maximum Recurrent Peak Reverse@ Voltage VRRM Symbol Parameter Min Maximum RMS Voltage VRMS VI(off) -0.5 Input voltage (VCC=-5V, IO=-100A) Maximum DC Blocking Voltage VDC --VI(on) (VO=-0.2V, IO=-5mA) V Output voltage = (IRectified --- IO O(on) O/II -10mA/-0.5mA Maximum Average Forward Current II = Input current (VI -5V) --- IO(off) Forward Output =-50V, VIhalf 0) sine-wave --Peak Surgecurrent Current(V 8.3 ms single CC= IFSM GI DConcurrent gain(JEDEC (VO=-5V, = IO -5mA) 56 superimposed rated load method) R1 Input resistance 15.4 Typical Thermal Resistance (Note 2) RΘJA R2/R1 Resistance ratio 0.8 Typical Junction Capacitance (Note 1) CJ Transition frequency fT --(VO=-10V, IO=5mA, Operating Temperature Range f=100MHz) TJ Storage Temperature Range 12 20 13 30 Typ 14 Max 21 Unit ----V --- 20 -3.0 30 V ---0.3 V ---0.36 mA A ---0.5 ----22 28.6 K¡ 1.0 1.2 250 14 40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 105 140 40 50 60 56 70 .008(0.20) .004(0.10) 80 100 150 200 1.0 30 *Marking: Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 ----55 to MHz +125 -55 to +150 .014(0.35) - 65 to +175 .006(0.15) CHARACTERISTICS .004(0.10)MAX. TSTG Maximum Forward Voltage at 1.0A DC .069(1.75) .057(1.45) VCC Supply voltage ---50 --V VIN Input voltage -40 --10 V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -30 IO Output current ----mA IC(MAX) -100 Ratings at 25℃ ambient temperature unless otherwise specified. P Power dissipation --150 --mW d Single phase half wave, 60Hz, resistive of inductive load. Tj Junction temperature --150 --ć For capacitive load, derate current by 20% Tstg Storage temperature -55 --150 ć SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS .035(0.90) .028(0.70) 0.012(0.3) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF 15 @T A=125℃ IR 0.50 0.70 0.85 0.9 Dimensions 0.5 in inches and (millimeters) 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA124EE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-0 2012-06 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA124EE THRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • HighDTA124EE –T for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.