WILLAS FM120-M+ SCS400DSTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes -20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch SCHOTTKY BARRIER DIODE SOD-123H SOT-23 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. currentmounting capability, type low forward voltage drop. • High z Small surface • High surge capability. z Low• Guardring reverse current and low forward voltage for overvoltage protection. z High reliability high-speed switching. • Ultra epitaxialis planar chip, metal silicon junction. • Silicon package available z Pb-Free • Lead-free parts meet environmental standards of RoHSMIL-STD-19500 product for packing code suffix ”G” /228 RoHS product for packing code suffix "G" suffix “H” • Halogen free product for packing code Halogen free product for packing code suffix "H" z Moisture Sensitivity Level 1 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 3 2 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant MARKING: D3A • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Ratings @Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Parameter • Mounting Position : Any Peak reverse voltage • Weight : Approximated 0.011 gram DC reverse Symbol Dimensions in inches and (millimeters)Unit Limit 40 V VR CHARACTERISTICS 40 MAXIMUM RATINGS AND ELECTRICAL V VRM Ratings at 25℃ ambient temperature unless otherwise specified. Peak forward current Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Mean rectifying current RATINGS IFSM 3 A IO 0.5 A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Markingdissipation Code Power VRRM Maximum Recurrent Peak Reverse Voltage Maximum resistance RMS Voltage from junction to ambient VRMS Thermal Maximum DC Blocking Voltage VDC Operating temperature Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Storage temperature superimposed on rated load (JEDEC method) IO IFSM P12 D 20 13 30 14 40 15 50 250 16 60 18 80 10 100 115 mW 150 120 200 Vo R14 θJA 21 28 35 400 42 56 70 105 ℃/W 140 Vo 20 30 40 50 60 80 100 150 200 Vo Tj 1.0 -55~+150 30 Tstg RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Electrical Ratings (Ta=25℃ unless otherwise specified) Storage Temperature Range TSTG Parameter Symbol CHARACTERISTICS Reverse breakdown voltage Maximum Forward Voltage at 1.0A DC Forward voltage Rated DC Blocking Voltage @T A=125℃ -55 to +125 Min Typ 40 2012-06 2012-11 ℃ P -55 to +150 - 65 to +175 ℃ ℃ Conditions VF I R IR=100μA V 0.50 IR1 NOTES: Reverse current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR2 2- Thermal Resistance From Junction to Ambient Capacitance between terminals Unit Am Max Am ℃ 40 120 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VR VF Maximum Average Reverse Current at @T A=25℃ -55~+125 0.70 0.85 0.5 0.92 IF=0.5A 0.55 V 50 μA VR=30V 30 μA VR=10V 10 0.9 CT1 125 pF VR=0V,f=1MHz CT2 20 pF VR=10V,f=1MHz Vo mA WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V FM120-M+ SCS400DS THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. Forward meetCharacteristics environmental standards of • Lead-free parts 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Typical Characteristics 1000 Mechanical data Method 2026 1 Ta=25℃ • Polarity : Indicated by cathode band • Mounting Position : Any 0.1 • Weight : Approximated 0.011 gram (uA) REVERSE CURRENT IR • Epoxy : UL94-V0 rated flame retardant T =100℃ • Case : Molded plastic, SOD-123H 10 , • Terminals :Plated terminals, solderable per MIL-STD-750 a FORWARD CURRENT Reverse Characteristics 1000 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 100 IF (mA) • 0.071(1.8) 0.056(1.4) Ta=100℃ 100 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 10 Dimensions in inches and (millimeters) 1 Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code RATINGS Capacitance Characteristics 13 30 Maximum RMS Voltage VRMS f=1MHz 14 21 Maximum DC Blocking Voltage 80 VDC 20 30 Maximum Average Forward Rectified Current IO IFSM Typical Thermal Resistance (Note 2) 15 20 25 VR 30 35 (V) CJ Operating Temperature Range TJ 250 14 40 Curve 15 Power16Derating 18 50 60 80 10 100 115 150 120 200 28 35 42 56 70 105 140 V 40 50 60 80 100 150 200 V 1.0 30 200 100 -55 to +125 20 40 120 TSTG 150 RΘJA Typical 40 Junction Capacitance (Note 1) Storage Temperature Range 10 PD CAPACITANCE BETWEEN TERMINALS CT (pF) superimposed on rated load (JEDEC method) Ta=25℃ (mW) 12 20 60 5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VRRM Peak Forward Surge Current 8.3 ms single half sine-wave 0 REVERSE VOLTAGE Maximum Recurrent Peak Reverse Voltage 100 0.1 POWER DISSIPATION 0.01 Ratings at temperature unless otherwise specified. 0 25℃ ambient 100 200 300 400 500 Single phase half wave, 60Hz, resistive of inductive load. FORWARD VOLTAGE VF (mV) For capacitive load, derate current by 20% ℃ -55 to +150 - 65 to +175 50 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 0 Maximum0Average Reverse Current at @T 15 A=25℃ 5 10 20 @T A=125℃ Rated DC Blocking Voltage REVERSE VOLTAGE VR (V) IR 0.50 25 0 0 0.70 25 0.9 0.85 50 0.5 10 75 AMBIENT TEMPERATURE 100 Ta 0.92 125 m (℃ ) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS400DSTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes -20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .122(3.10) .106(2.70) .063(1.60) .047(1.20) 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage .080(2.04) Maximum RMS Voltage Maximum DC Blocking.070(1.78) Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range CHARACTERISTICS 21 28 35 42 20 30 40 50 60 IO IFSM VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES: .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 18 80 10 .008(0.20) 100 56 70 .003(0.08) 80 100 115 150 120 200 Vo 105 140 Vo 150 200 Vo 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 16 60 TSTG .004(0.10)MAX. Rated DC Blocking Voltage 15 50 14 TJ Operating Temperature Range 14 40 VDC CJ Typical Junction Capacitance (Note 1) 13 30 VRMS RΘJA Typical Thermal Resistance (Note 2) 12 20 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) Vo mA 10 Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS400DS THRU SOT-23 Plastic-Encapsulate FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) capability, low forward voltage drop. • High currentDevice PN Packing • High surge capability. (1) (2) SCS400DS ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel for overvoltage protection. • Guardring high-speed switching. • Ultra Note: (1) Packing code, Tape & Reel Packing • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Markingcontained are intended to provide a product description only. "Typical" parameters Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave use of any product or circuit. 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 TypicalWILLAS products are not designed, intended or authorized for use in medical, Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ of WILLAS. Customers using or selling WILLAS components for use in IR 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.