WILLAS BAS21X

WILLAS
FM120-M+
BAS21xTHRU
FM1200-M+
SOT-23
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
SWITCHING
DIODE
• Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
Low profile
surface mounted application in order to
z
Fast•Switching
Speed
SOT-23
SOD-123H
optimize board space.
z
Surface
Ideally
Suited for Automatic Insertion
powerPackage
loss, high
efficiency.
• LowMount
z
capability,
lowApplications
forward voltage drop.
• High current
For General
Purpose
Switching
• High surge capability.
High• Conductance
Guardring for overvoltage protection.
Pb-Free
package
is available
high-speed
switching.
• Ultra
epitaxial
planar
chip,
metal
silicon junction.
• Silicon
RoHS
product
for packing
code
suffix
”G”
parts meet
environmental
standards
• Lead-free
Halogen
free product
for packing
code suffix
“H” of
z
z
z
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Moisture
Level 1
product for packing
code suffix "G"
• RoHSSensitivity
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathodeBAS21A
band
BAS21
• Mounting
Marking:
JS Position : Any
Dimensions in inches and (millimeters)
BAS21S
BAS21C
Marking:JS2
Marking: JS4 RU -7
Marking:JS3
• Weight : Approximated 0.011 gram
Maximum Ratings @Ta=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load,reverse
derate current
by 20%
Repetitive
peak
voltage
RATINGS
Working peak reverse
voltage
Marking Code
RWM
VRRM
13
30
VRMS
14
21
IFM
28
Maximum
Blockingoutput
Voltage current
AverageDC
rectified
VDC
20
30
IO40
Maximum
Average peak
Forward
Rectifiedsurge
Currentcurrent
Non-repetitive
forward
IO
@ t = 1.0µs
@ t = 1.0s
IFSM
ForwardRMS
continuous
Maximum
Voltage current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Repetitive peak forward surge current
Typical Thermal Resistance (Note 2)
Power dissipation
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating
ThermalTemperature
resistanceRange
junction to ambient
TJ
Storage Temperature Range
14
40
VR
Storage temperature
range
CHARACTERISTICS
16
60
NOTES:
Parameter
Reverse breakdown voltage
56
50
60 200 80
115
150
120
200
Vol
70
mA
105
140
Vol
100
150
mA
200
Vol
1.0
2.5
0.5
30
625
40
225
120
PD
-55 to +125
RθJA
55
- 65 to +175
Am
A
Am
mA
0.50
0.70
IR
Symbol
V(BR)
Test
0.85
0.5
10
conditions
Min
IR= 100µA
0.9
℃
0.92
Vol
mAm
Max
250
Unit
V
VR=200V
0.1
µA
Forward voltage
VF
1000
1250
mV
Diode capacitance
CD
VR=0V, f=1MHz
5
pF
Reveres recovery time
trr
IF=IR=30mA,Irr=0.1×IR,RL=100Ω
50
ns
2012-1
℃
℃
IF=100mA
IF=200mA
2012-06
PF
-55 to +150 ℃/W
IR
Reverse voltage leakage current
2- Thermal Resistance From Junction to Ambient
℃/W
mW
150
TJ
TSTG
-55~+150
℃
FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH
FM1200-MH UN
SYMBOL FM120-MH FM130-MH FM140-MH
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
10
100
42 400
ELECTRICAL
(Ta=25℃ unless otherwise specified)
Maximum Average CHARACTERISTICS
Reverse Current at @T A=25℃
@T A=125℃
18
80
35
IFRM
VF
Maximum Forward Voltage at 1.0A DC
15
50
IFSM
TSTG
Junction temperature
Rated DC Blocking Voltage
Unit
VRRM
12
20
Maximum Recurrent Peak Reverse Voltage
Limit
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH V
V
250
DC blocking voltage
Symbol
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS21xTHRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
design, excellent
power dissipation offers
• Batch process
Forward
Characteristics
C
C
REVERSE CURRENT IR
o
o
T=
a 1
00
Reverse
1000
Characteristics
SOD-123H
0.146(3.7)
0.130(3.3)
(nA)
reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
100
• High current capability, low forward voltage drop.
• High surge capability.
•10Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
1
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.1
T=
a 2
5
FORWARD CURRENT
IF
(mA)
1000
better
Mechanical data
0.012(0.3) Typ.
o
Ta=100 C
100
0.071(1.8)
0.056(1.4)
10
o
Ta=25 C
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
0.01
: Molded
• Case
0.0
0.4 plastic,
0.8SOD-123H
1.2
1.6
2.0
,
FORWARD
VOLTAGE
VF (V)
• Terminals :Plated
terminals,
solderable
per MIL-STD-750
1
0
40Typ.
0.031(0.8)
80
120
REVERSE VOLTAGE
160 0.031(0.8) Typ.
200
VR
(V)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated
gram
Capacitance0.011
Characteristics
1.6
Dimensions in inches and (millimeters)
Power Derating Curve
300
T =25℃
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
RATINGS
1.2
(mW)
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
250
PD
Ratings at 25℃ ambient temperature unless otherwise specified.
1.4
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
a
f=1MHz
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum1.0RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
0.8
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
0.6
Typical Thermal
Resistance
(Note 2)
0
4
8
R16ΘJA
12
Typical Junction Capacitance
(Note 1)
REVERSE
VOLTAGE
Operating Temperature Range
VR
Storage Temperature Range
(V)CJ
TJ
20
150
100
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
1.0
30
50
0
0
-55 to +125
Am
Am
40 75
100
125
120
AMBIENT TEMPERATURE
Ta (℃)
-55 to +150
25
50
℃/
150
P
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS21xTHRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOD-123H
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Halogen free product for packing code suffix "H"
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
.080(2.04)
Maximum RMS Voltage
.070(1.78)
VRRM
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.004(0.10)MAX.
CHARACTERISTICS
14
40
15
50
16
60
18
80
VF
@T A=125℃
IR
NOTES:
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
100
150
.003(0.08)
70
105
100
150
120
200
Vo
140
Vo
200
Vo
1.0
30
40
120
-55 to +125
Am
Am
℃/
P
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
13
30
TSTG
Maximum Forward Voltage at 1.0A DC
.008(0.20)
10
115
12
20
0.50
0.70
0.85
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.9
0.92
Vo
10
mA
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.D CORP.
WILLAS ELECTRONIC CORP.