WILLAS FM120-M+ BAS21xTHRU FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. Low profile surface mounted application in order to z Fast•Switching Speed SOT-23 SOD-123H optimize board space. z Surface Ideally Suited for Automatic Insertion powerPackage loss, high efficiency. • LowMount z capability, lowApplications forward voltage drop. • High current For General Purpose Switching • High surge capability. High• Conductance Guardring for overvoltage protection. Pb-Free package is available high-speed switching. • Ultra epitaxial planar chip, metal silicon junction. • Silicon RoHS product for packing code suffix ”G” parts meet environmental standards • Lead-free Halogen free product for packing code suffix “H” of z z z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Moisture Level 1 product for packing code suffix "G" • RoHSSensitivity Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathodeBAS21A band BAS21 • Mounting Marking: JS Position : Any Dimensions in inches and (millimeters) BAS21S BAS21C Marking:JS2 Marking: JS4 RU -7 Marking:JS3 • Weight : Approximated 0.011 gram Maximum Ratings @Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Single phase half wave, 60Hz, resistive of inductive load. For capacitive load,reverse derate current by 20% Repetitive peak voltage RATINGS Working peak reverse voltage Marking Code RWM VRRM 13 30 VRMS 14 21 IFM 28 Maximum Blockingoutput Voltage current AverageDC rectified VDC 20 30 IO40 Maximum Average peak Forward Rectifiedsurge Currentcurrent Non-repetitive forward IO @ t = 1.0µs @ t = 1.0s IFSM ForwardRMS continuous Maximum Voltage current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Repetitive peak forward surge current Typical Thermal Resistance (Note 2) Power dissipation RΘJA Typical Junction Capacitance (Note 1) CJ Operating ThermalTemperature resistanceRange junction to ambient TJ Storage Temperature Range 14 40 VR Storage temperature range CHARACTERISTICS 16 60 NOTES: Parameter Reverse breakdown voltage 56 50 60 200 80 115 150 120 200 Vol 70 mA 105 140 Vol 100 150 mA 200 Vol 1.0 2.5 0.5 30 625 40 225 120 PD -55 to +125 RθJA 55 - 65 to +175 Am A Am mA 0.50 0.70 IR Symbol V(BR) Test 0.85 0.5 10 conditions Min IR= 100µA 0.9 ℃ 0.92 Vol mAm Max 250 Unit V VR=200V 0.1 µA Forward voltage VF 1000 1250 mV Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω 50 ns 2012-1 ℃ ℃ IF=100mA IF=200mA 2012-06 PF -55 to +150 ℃/W IR Reverse voltage leakage current 2- Thermal Resistance From Junction to Ambient ℃/W mW 150 TJ TSTG -55~+150 ℃ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 100 42 400 ELECTRICAL (Ta=25℃ unless otherwise specified) Maximum Average CHARACTERISTICS Reverse Current at @T A=25℃ @T A=125℃ 18 80 35 IFRM VF Maximum Forward Voltage at 1.0A DC 15 50 IFSM TSTG Junction temperature Rated DC Blocking Voltage Unit VRRM 12 20 Maximum Recurrent Peak Reverse Voltage Limit FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH V V 250 DC blocking voltage Symbol WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS21xTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Typical Characteristics Package outline Features design, excellent power dissipation offers • Batch process Forward Characteristics C C REVERSE CURRENT IR o o T= a 1 00 Reverse 1000 Characteristics SOD-123H 0.146(3.7) 0.130(3.3) (nA) reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. 100 • High current capability, low forward voltage drop. • High surge capability. •10Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.1 T= a 2 5 FORWARD CURRENT IF (mA) 1000 better Mechanical data 0.012(0.3) Typ. o Ta=100 C 100 0.071(1.8) 0.056(1.4) 10 o Ta=25 C 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.01 : Molded • Case 0.0 0.4 plastic, 0.8SOD-123H 1.2 1.6 2.0 , FORWARD VOLTAGE VF (V) • Terminals :Plated terminals, solderable per MIL-STD-750 1 0 40Typ. 0.031(0.8) 80 120 REVERSE VOLTAGE 160 0.031(0.8) Typ. 200 VR (V) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated gram Capacitance0.011 Characteristics 1.6 Dimensions in inches and (millimeters) Power Derating Curve 300 T =25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 1.2 (mW) 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code 250 PD Ratings at 25℃ ambient temperature unless otherwise specified. 1.4 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) a f=1MHz Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum1.0RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 0.8 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 0.6 Typical Thermal Resistance (Note 2) 0 4 8 R16ΘJA 12 Typical Junction Capacitance (Note 1) REVERSE VOLTAGE Operating Temperature Range VR Storage Temperature Range (V)CJ TJ 20 150 100 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 50 0 0 -55 to +125 Am Am 40 75 100 125 120 AMBIENT TEMPERATURE Ta (℃) -55 to +150 25 50 ℃/ 150 P ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS21xTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) VRRM VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .004(0.10)MAX. CHARACTERISTICS 14 40 15 50 16 60 18 80 VF @T A=125℃ IR NOTES: .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 100 150 .003(0.08) 70 105 100 150 120 200 Vo 140 Vo 200 Vo 1.0 30 40 120 -55 to +125 Am Am ℃/ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 13 30 TSTG Maximum Forward Voltage at 1.0A DC .008(0.20) 10 115 12 20 0.50 0.70 0.85 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.9 0.92 Vo 10 mA Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP.