WILLAS FM120-M+ THRU MMBD41487: FM1200-M+ 1.0A SURFACE Plastic-Encapsulate MOUNT SCHOTTKY BARRIER RECTIFIERS SOT-363 Diodes-20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SWITCHING DIODES MMBD4148TW better reverse leakage current and thermal resistance. SOT-363 SOD-123H • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. HighSwitching current capability, •Fast z Speedlow forward voltage drop. • High surge capability. z General Switching Guardring for Purpose overvoltage protection.Applications •For Ultra high-speed switching. • z High Conductance • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Moisture Sensitivity Level 1 MARKING: MMBD4148TW KA2 : UL94-V0 rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H Maximum Ratings @TA=25℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Parameter 0.031(0.8) Typ. Symbol • Polarity : Indicated by cathode band Non-Repetitive Peak reverse voltage • Mounting Position : Any Peak Repetitive Peak reverse voltage • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Limits Unit Dimensions in inches and (millimeters) 100 VRM V VRRM VRWM Working Peak Reverse Voltage 75 V RATINGS AND ELECTRICAL CHARACTERISTICS VR DC Blocking MAXIMUM Voltage Ratings at 25℃ ambient temperature unless otherwise specified. VR(RMS) RMS Reverse Voltage Single phase half wave, 60Hz, resistive of inductive load. Continuous Current For capacitive load, derate current by 20% Forward IFM Average Rectified Output Current RATINGS IFSM VRRM @=1.0s Maximum DC Blocking Voltage 14 21 20 30 CHARACTERISTICS 2012-11 70 105 140 150 200 Vo Am ℃ ℃ P -55 to +150 - 65 to +175 V ℃ Conditions ℃ IR=10μA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN IF=10mA 1.0 V 10 IF=50mA 1.25 V IF=150mA 1 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr 4 ns IR Am ℃ 0.5 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR1 2012-06 1.0 30 Unit Vo K/W 40 120 Max. 120 200 100 mW V VF4 Reverse Recovery Time 80 0.855 NOTES: Capacitance between terminals 56 115 150 Vo V @T A=125℃ VF3 Reverse current 2- Thermal Resistance From Junction to Ambient 42 60 10 A100 0.715 VF2 35 50 -55 to +125 75 Maximum Average Forward voltageReverse Current at @T A=25℃ Rated DC Blocking Voltage 28 Typ. 18 80 40 200 V (BR) R VSYMBOL F1 16 60 -65~+150 Min. VF Maximum Forward Voltage at 1.0A DC 15 50 150 Symbol TSTG Reverse Breakdown Voltage 1.0 TSTG TJ Parameter Storage Temperature Range 40 Tj IFSM CJ Operating Temperature Range mA 625 RΘJA Typical Thermal Resistance (Note 2) Electrical Ratings @T(Note =25℃ Typical Junction Capacitance A 1) 300 14 2.0 R IO θJA Peak Forward Surge Current 8.3 ms single half sine-wave Storage temperature superimposed on rated load (JEDEC method) 13 30 VDC Thermal Resistance Junction to Ambient Maximum Average Forward Rectified Current Junction temperature 12 20 VRMS Pd Power Dissipation V 150 FM150-MH FM160-MH FM180-MH FM1100-MH mA IO FM120-MH FM130-MH FM140-MH FM1150-MH FM1200-MH U SYMBOL Marking Code surge current @=1.0μs Peak forward Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 53 0.50 IF=1mA 0.70 0.85 0.9 0.92 Vo mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBD41487: FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOT-363 Plastic-Encapsulate Diodes-20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vol Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vol Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBD41487: FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOT-363 Plastic-Encapsulate Diodes-20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOT-363 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .071(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .071(1.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .030(0.75) .021(0.55) RATINGS Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 80 100 115 150 120 200 Vol 42 56 70 105 140 Vol 60 80 100 150 200 Vol IO IFSM RΘJA Typical Thermal Resistance (Note 2) .010(0.25) 18 10 .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage .056(1.40) .047(1.20) Maximum Average Forward Rectified Current 0.012(0.3) Typ. 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .004(0.10) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .043(1.10) .032(0.80) VF Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC Rev.C CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBD41487: FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOT-363 Plastic-Encapsulate Diodes -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering loss, high efficiency. • Low powerInformation: 0.146(3.7) 0.130(3.3) capability, low forward voltage drop. • High currentDevice PN Packing • High surge capability. (1) (2) MMBD4148TW‐T ‐WS Tape&Reel: 3 Kpcs/Reel for overvoltage G protection. • Guardring high-speed switching. • Ultra Packing code,Reel Packing；CASE: Note: (1) SOT‐363 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified. Single phaseWILLAS reserves the right to make changes without notice to any product half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Markingchanges. WILLAS or anyone on its behalf assumes no responsibility or liability Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM for any errors or inaccuracies. Data sheet specifications and its information 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS contained are intended to provide a product description only. "Typical" parameters Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current IO 1.0 which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) WILLAS does not assume any liability arising out of the application or 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typicaluse of any product or circuit. Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH life‐saving implant or other applications intended for life‐sustaining or other related 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage or indirectly cause injury or threaten a life without expressed written approval NOTES: of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.