SCS731XN(SOT 363)

WILLAS
FM120-M+
SCS731XNTHRU
FM1200-M+
SOT-363
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
profile surface
mounted application in order to
• Low
SCHOTTKY
BARRIER
DIODE
SOT-363
optimize board space.
• Low power loss, high efficiency.
FEATURES
0.146(3.7)
0.130(3.3)
High current capability, low forward voltage drop.
Small •Power
Mold Type
• High surge capability.
Low V•F Guardring for overvoltage protection.
• Ultra high-speed switching.
High Reliability
• Silicon epitaxial planar chip, metal silicon junction.
Pb-Free
package
is available
parts
meet environmental standards of
• Lead-free
MIL-STD-19500
/228 code suffix ”G”
RoHS product for packing
• RoHS product for packing code suffix "G"
HalogenHalogen
free product
for packing
suffix"H"
“H”
free product
for packingcode
code suffix




0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Moisture
Sensitivity Level
Mechanical
data1

0.040(1.0)
0.024(0.6)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
APPLICATIONS
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
im
ina
General Rectification
Method 2026

0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MARKING: 731
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25℃ ambient(temperature
unless otherwise
specified.
MAXIMUM
RATINGS
Ta=25℃ unless
otherwise
noted )
VR
IO Code
Marking
DC Blocking Voltage
RATINGS
Average Rectified Forward Current
12
13
20
30
Maximum
Peak Reverse Voltage
VRRM Current@10ms
Peak Forward Surge
IFSM RecurrentNon-repetitive
Maximum
RMS Voltage
Power
P
D
Dissipation
VRMS
Maximum DC Blocking Voltage
RθJA
Tj
Operating Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Tstg
Storage Temperature
superimposed on rated load (JEDEC method)
V
CJ
Operating Temperature Range
TJ
50
200
16
60
18mA
80mA
10
100
115
150
120
200
V
35
200
42
56mW
70
105
140
V
100
150
200
V
28
20
30
40
IO
IFSM
Typical Junction Capacitance (Note 1)
Storage Temperature Range
40
3015
21
50
60
500
80
℃/W
1.0
30
-55~+125
-55~+150
RΘJA
Typical Thermal Resistance (Note 2)
Unit
14
40
14
VDC
Thermal Resistance From Junction
To Ambient
Maximum Average Forward Rectified Current
Value
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Single phase half wave, 60Hz, resistive of inductive load.
Symbol
Parameter
For capacitive load, derate current by 20%
40
120
-55 to +125
A
℃
℃
A
℃
-55 to +150
- 65 to +175
TSTG
ELECTRICAL
CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
CHARACTERISTICS
Symbol
Maximum Forward Voltage at 1.0A DC
Reverse
voltage
Maximum
Average Reverse Current atV(BR)
@T A=25℃
Rated DC
Blocking Voltage
Reverse
current
Forward
NOTES:voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Test conditions
IR=100μA
IR
IR@T A=125℃ VR=10V
VF
IF=1mA
1- Measured
at 1 MHZ and applied reverse
voltage of 4.0 VDC.
Ctot
VR=1V,f=1MHz
Total
capacitance
0.50
Min
Typ
0.70
40
Max
0.85
0.5
10
Unit
0.9
0.92
V
1
μA
0.37
V
2
pF
V
m
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SCS731XNTHRU
FM1200-M+
SOT-363
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-363
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant.071(1.80)
.054(1.35)
.045(1.15)
0.040(1.0)
0.024(0.6)
ina
ry
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
VDC
20
30
40
50
Maximum DC Blocking Voltage
.056(1.40)
.047(1.20)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.004(0.10)MAX.
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
80
100
115
150
120
200
V
42
56
70
105
140
V
60
80
100
150
200
V
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
.010(0.25)
.003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Pr
el
Marking Code
.096(2.45)
.071(1.80)
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.030(0.75)
RATINGS
.021(0.55)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.012(0.3) Typ.
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
Maximum Average Reverse Current at
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
.016(0.40)
@T A=25℃
IR
@T A=125℃
.004(0.10)
NOTES:
.043(1.10)
.032(0.80)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.D CORP
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS731XN
FM1200-M+
SOT-363
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIER Diodes
RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low (2)
forward voltage drop.
• High current capability,(1)
SCS731XN ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring
for
overvoltage
protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum which may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum and do vary in different applications and actual performance may vary over time. RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
on rated load (JEDEC method)
superimposed
℃/
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DC such applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.