WILLAS FM120-M+ THRU MMBT2222ATT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers NPN Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. These transistors are efficiency. designed for general purpose amplifier loss, high • Low power applications. Theycapability, are housed the SOT−523 which lowinforward voltage package drop. • High current is designed for low power surface mount applications. capability. • High surge • Guardring for overvoltage protection. Features • Ultra high-speed switching. planar chip, metal silicon junction. compliance with RoHS requirements. • We• Silicon declareepitaxial that the material of product partsismeet environmental standards of • Lead-free Pb-Free package available 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT-523 MIL-STD-19500 /228 RoHS product for packing code suffix ”G” • RoHS product for packing code suffix "G" Halogen freefree product forfor packing Halogen product packingcode codesuffix suffix“H” "H" COLLECTOR 3 Mechanical data : UL94-V0INFORMATION rated flame retardant • Epoxy ORDERING • Case : Molded plastic, SOD-123H Device Maring Shipping , • Terminals :Plated terminals, solderable per MIL-STD-750 1 BASE 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. MMBT2222ATT1 Method 1P2026 3000 / Tape & Ree l 2 EMITTER • Polarity : Indicated by cathode band • Mounting Position : Any Symbol Rating • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA = 25°C) Collector−Emitter Voltage VCEO Max Unit 40 Vdc MAXIMUM ELECTRICAL CHARACTERISTICS Collector−Base Voltage RATINGS AND V 75 Vdc CBO Ratings at 25℃ ambient temperature unless otherwise specified. Emitter−Base Voltage VEBO 6.0 Single phase half wave, 60Hz, resistive of inductive load. Collector Current − Continuous I 600 C For capacitive load, derate current by 20% Symbol Maximum Peak Reverse Voltage Total Recurrent Device Dissipation (Note 1) Maximum Voltage TA RMS = 25°C Maximum DC Blocking Voltage Thermal Resistance, Junction−to−Ambient Maximum Average Forward Rectified Current Vdc mAdc 1P M G G FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH THERMAL CHARACTERISTICS RATINGS Marking Code Characteristic MARKING DIAGRAM PD VRRM RqJA VDC VRMS Max12 15020 Unit 13 30 mW 14 40 21 28 35 83320 30 °C/W 40 50 14 IO Operating and Storage Junction TJ, Tstg −55 to +150 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Temperature Range 15 50 16 60 1P42 M60 G °C superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Typical Junction Capacitance (Note 1) Operating Temperature Range CJ Characteristic TJ Storage Temperature Range OFF CHARACTERISTICS Symbol 1.0 30 10 100 115 150 56 70 Code 105 = Specific Device = Date 80 Code 100 150 = Pb−Free Package 120 200 Volts 140 Volts 200 Volts Amp Amp 40 120 Min ℃/W PF Max -55 to +150 Unit - 65 to +175 TSTG ℃ ℃ Collector −Emitter Breakdown Voltage (Note 1) V(BR)CEO 40 − Vdc CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT (IC = 1.0 mAdc, IB = 0) Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Collector −Base Breakdown Voltage V(BR)CBO 75 − Vdc 0.5 Maximum Average Reverse Current at @T A=25℃ (IC = 10 mAdc, IE = 0) IR mAm 10 @T A=125℃ Rated DC Blocking Voltage Emitter −Base Breakdown Voltage V(BR)EBO 6.0 − Vdc NOTES:(IE = 10 mAdc, IC = 0) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Base Cutoff Current -55 to +125 1 18 80 2- Thermal Resistance From to Ambient (VCE = 60 Vdc, VEBJunction = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 2012-11 IBL − 20 nAdc ICEX − 100 nAdc WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222ATT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features ON CHARACTERISTICS (Note 2) excellent power dissipation offers • Batch process design, better reverse leakage current and thermal resistance. DC Current Gain Low profile surface mounted application in order to • (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = optimize 1.0 mAdc,board VCE =space. 10 Vdc) powerVloss, high efficiency. 10 mAdc, (IC •=Low CE = 10 Vdc) current capability, (IC •=High 150 mAdc, VCE = 10 Vdc)low forward voltage drop. surge V capability. 500 mAdc, (IC •=High CE = 10 Vdc) Guardring for overvoltage protection. • Collector −Emitter Saturation Voltage high-speed (IC •=Ultra 150 mAdc, IB = 15switching. mAdc) epitaxial planar 500 mAdc, IB = 50 mAdc)chip, metal silicon junction. (IC •=Silicon • Lead-free parts meet environmental standards of Base −Emitter Saturation /228 Voltage MIL-STD-19500 (IC•=RoHS 150 mAdc, IB for = 15 mAdc)code suffix "G" product packing (IC = 500 mAdc, IB = 50 mAdc) Halogen free product for packing code suffix "H" SMALL− SIGNAL CHARACTERISTICS Mechanical data HFE VCE(sat) VBE(sat) Current −Gain :−UL94-V0 Bandwidth Product rated flame retardant • Epoxy (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) • Case : Molded plastic, SOD-123H , Output Capacitance • Terminals :Plated terminals, solderable per MIL-STD-750 (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Method 2026 Input •Capacitance Polarity : Indicated by cathode band (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) • Mounting Position : Any Input Impedance • : Approximated = 10 Vdc, IC = 10 mAdc,0.011 f = 1.0gram kHz) (VCEWeight fT − − − − − − − 0.3 1.0 0.6 − 1.2 2.0 250 − − 8.0 0.031(0.8) Typ. Cobo − 0.012(0.3) Typ. Vdc 0.071(1.8) 0.056(1.4) Vdc 0.040(1.0) 0.024(0.6) MHz 0.031(0.8) Typ. CDimensions − 30 ibo in inches and (millimeters) hie 0.25 1.25 pF pF kW Voltage Feedback Ratio − 4.0 X 10− 4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICShre (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Ratings at 25℃ ambient temperature unless otherwise specified. Smallphase −Signal Gain resistive of inductive load. hfe 75 375 − Single halfCurrent wave, 60Hz, (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) For capacitive load, derate current by 20% Output Admittance hoe 25 200 mmhos FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Marking Code 12 13 14 15 16 18 10 115 120 Noise Figure − 80 4.0 100 dB150 20 30 40 50NF 60 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS SWITCHING CHARACTERISTICS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Delay Time Maximum Average Forward Rectified Current SOD-123H 35 50 0.146(3.7) 75 0.130(3.3) 100 40 (VCC = 3.0IOVdc, VBE = − 0.5 Vdc, mAdc, IB1 = 15 mAdc) IC = 150 Rise Time Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Storage Time superimposed on rated load (JEDEC method) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IR = 15 mAdc) B2 Typical Thermal Resistance (Note 2) ΘJA Fall Time td ts 1.0− − 30 − tf 40− tr Typical Junction Capacitance J 1. Device mounted on FR4(Note glass1)epoxy printed circuitCboard using the minimum recommended footprint.120 2. Pulse Temperature Test: Pulse Width Operating Range≤ 300 ms, Duty Cycle ≤ 2.0%. TJ Storage Temperature Range -55 to +125 10 25 225 60 Amps ns Amps ns ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 WILLAS ELECTRONIC CORP. Volts mAmp WILLAS FM120-M+ THRU MMBT2222ATT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H to • Low profile surface mounted application in orderSOT-523 optimize board space. .067(1.70) .059(1.50) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .069(1.75) .057(1.45) MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) .004(0.10)MIN. • .035(0.90) .028(0.70) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .014(0.35) .010(0.25) .008(0.20) .004(0.10) MAXIMUM .043(1.10) RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .035(0.90) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts .004(0.10)MAX. Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .014(0.35) TJ TSTG .006(0.15) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC 1.0 30 .035(0.90) .028(0.70) @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR Dimensions in inches and (millimeters) 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 WILLAS ELECTRONIC CORP. Volts mAmp