WILLAS MMBT2222ATT1

WILLAS
FM120-M+
THRU
MMBT2222ATT1
General
Purpose
Transistor
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
NPN
Silicon
better
reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
These
transistors
are efficiency.
designed for general purpose amplifier
loss, high
• Low power
applications.
Theycapability,
are housed
the SOT−523
which
lowinforward
voltage package
drop.
• High current
is designed
for low
power surface mount applications.
capability.
• High surge
• Guardring for overvoltage protection.
Features
• Ultra high-speed switching.
planar chip,
metal silicon
junction.
compliance
with RoHS requirements.
• We• Silicon
declareepitaxial
that the material
of product
partsismeet
environmental standards of
• Lead-free
Pb-Free
package
available
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-523
MIL-STD-19500 /228
RoHS product for packing code suffix ”G”
• RoHS product for packing code suffix "G"
Halogen
freefree
product
forfor
packing
Halogen
product
packingcode
codesuffix
suffix“H”
"H"
COLLECTOR
3
Mechanical data
: UL94-V0INFORMATION
rated flame retardant
• Epoxy
ORDERING
• Case : Molded plastic, SOD-123H
Device
Maring
Shipping
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1
BASE
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
MMBT2222ATT1 Method
1P2026 3000 / Tape & Ree l
2
EMITTER
• Polarity : Indicated by cathode band
• Mounting Position : Any
Symbol
Rating
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA = 25°C)
Collector−Emitter Voltage
VCEO
Max
Unit
40
Vdc
MAXIMUM
ELECTRICAL
CHARACTERISTICS
Collector−Base
Voltage RATINGS AND
V
75
Vdc
CBO
Ratings at 25℃ ambient temperature unless otherwise specified.
Emitter−Base Voltage
VEBO
6.0
Single phase half wave, 60Hz, resistive of inductive load.
Collector
Current
−
Continuous
I
600
C
For capacitive load, derate current by 20%
Symbol
Maximum
Peak Reverse
Voltage
Total Recurrent
Device Dissipation
(Note
1)
Maximum
Voltage
TA RMS
= 25°C
Maximum
DC Blocking
Voltage
Thermal
Resistance,
Junction−to−Ambient
Maximum
Average Forward Rectified Current
Vdc
mAdc
1P M G
G FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
THERMAL CHARACTERISTICS
RATINGS
Marking Code Characteristic
MARKING DIAGRAM
PD
VRRM
RqJA
VDC
VRMS
Max12
15020
Unit
13
30
mW
14
40
21
28
35
83320
30
°C/W
40
50
14
IO
Operating and Storage Junction
TJ, Tstg −55 to +150
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Temperature Range
15
50
16
60
1P42
M60
G
°C
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
Characteristic TJ
Storage
Temperature Range
OFF CHARACTERISTICS
Symbol 1.0
30
10
100
115
150
56
70 Code 105
= Specific
Device
= Date
80 Code 100
150
= Pb−Free Package
120
200
Volts
140
Volts
200
Volts
Amp
Amp
40
120
Min
℃/W
PF
Max
-55
to +150
Unit
- 65 to +175
TSTG
℃
℃
Collector −Emitter Breakdown Voltage (Note 1)
V(BR)CEO
40
−
Vdc
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
(IC = 1.0 mAdc,
IB = 0)
Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
Collector −Base Breakdown Voltage
V(BR)CBO
75
−
Vdc
0.5
Maximum Average Reverse Current at @T A=25℃
(IC = 10 mAdc, IE = 0)
IR
mAm
10
@T A=125℃
Rated DC Blocking Voltage
Emitter −Base Breakdown Voltage
V(BR)EBO
6.0
−
Vdc
NOTES:(IE = 10 mAdc, IC = 0)
1- Measured
at 1 MHZ
and applied reverse voltage of 4.0 VDC.
Base Cutoff
Current
-55 to +125
1 18
80
2- Thermal
Resistance
From
to Ambient
(VCE
= 60 Vdc,
VEBJunction
= 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
2012-11
IBL
−
20
nAdc
ICEX
−
100
nAdc
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBT2222ATT1
FM1200-M+
General
Purpose
Transistor
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
ON CHARACTERISTICS
(Note 2)
excellent power dissipation offers
• Batch process design,
better
reverse
leakage
current and thermal resistance.
DC Current Gain
Low
profile
surface
mounted
application in order to
•
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = optimize
1.0 mAdc,board
VCE =space.
10 Vdc)
powerVloss,
high efficiency.
10 mAdc,
(IC •=Low
CE = 10 Vdc)
current
capability,
(IC •=High
150 mAdc,
VCE
= 10 Vdc)low forward voltage drop.
surge V
capability.
500 mAdc,
(IC •=High
CE = 10 Vdc)
Guardring for overvoltage protection.
•
Collector −Emitter Saturation Voltage
high-speed
(IC •=Ultra
150 mAdc,
IB = 15switching.
mAdc)
epitaxial
planar
500 mAdc,
IB = 50
mAdc)chip, metal silicon junction.
(IC •=Silicon
• Lead-free parts meet environmental standards of
Base −Emitter
Saturation /228
Voltage
MIL-STD-19500
(IC•=RoHS
150 mAdc,
IB for
= 15
mAdc)code suffix "G"
product
packing
(IC = 500 mAdc, IB = 50 mAdc)
Halogen free product for packing code suffix "H"
SMALL−
SIGNAL CHARACTERISTICS
Mechanical
data
HFE
VCE(sat)
VBE(sat)
Current
−Gain :−UL94-V0
Bandwidth
Product
rated
flame retardant
• Epoxy
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
• Case : Molded plastic, SOD-123H
,
Output
Capacitance
• Terminals
:Plated terminals, solderable per MIL-STD-750
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Method 2026
Input •Capacitance
Polarity : Indicated by cathode band
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
• Mounting Position : Any
Input Impedance
•
: Approximated
= 10 Vdc,
IC = 10 mAdc,0.011
f = 1.0gram
kHz)
(VCEWeight
fT
−
−
−
−
−
−
−
0.3
1.0
0.6
−
1.2
2.0
250
−
−
8.0
0.031(0.8) Typ.
Cobo
−
0.012(0.3) Typ.
Vdc
0.071(1.8)
0.056(1.4)
Vdc
0.040(1.0)
0.024(0.6)
MHz
0.031(0.8) Typ.
CDimensions
−
30
ibo
in inches
and (millimeters)
hie
0.25
1.25
pF
pF
kW
Voltage Feedback
Ratio
−
4.0
X 10− 4
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICShre
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Ratings at 25℃ ambient temperature unless otherwise specified.
Smallphase
−Signal
Gain resistive of inductive load.
hfe
75
375
−
Single
halfCurrent
wave, 60Hz,
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
For capacitive load, derate current by 20%
Output Admittance
hoe
25
200
mmhos
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
RATINGS
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Marking Code
12
13
14
15
16
18
10
115
120
Noise Figure
− 80
4.0 100
dB150
20
30
40
50NF
60
200
Maximum
Recurrent Peak Reverse Voltage
Volts
VRRM
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
SWITCHING
CHARACTERISTICS
Volts
Maximum
DC Blocking
Voltage
20
30
40
50
60
80
100
150
200
VDC
Delay Time
Maximum
Average Forward Rectified Current
SOD-123H
35
50
0.146(3.7)
75
0.130(3.3)
100
40
(VCC = 3.0IOVdc, VBE = − 0.5 Vdc,
mAdc, IB1 = 15 mAdc)
IC = 150
Rise Time
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Storage Time
superimposed
on rated load (JEDEC method)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IR
= 15 mAdc)
B2
Typical
Thermal Resistance (Note 2)
ΘJA
Fall Time
td
ts
1.0−
−
30
−
tf
40−
tr
Typical
Junction
Capacitance
J
1. Device
mounted
on FR4(Note
glass1)epoxy printed circuitCboard
using the minimum recommended footprint.120
2. Pulse Temperature
Test: Pulse Width
Operating
Range≤ 300 ms, Duty Cycle ≤ 2.0%.
TJ
Storage Temperature Range
-55 to +125
10
25
225
60
Amps
ns
Amps
ns
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
WILLAS ELECTRONIC CORP.
Volts
mAmp
WILLAS
FM120-M+
THRU
MMBT2222ATT1
General
Purpose
Transistor
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
to
• Low profile surface mounted application in orderSOT-523
optimize board space.
.067(1.70)
.059(1.50)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.069(1.75)
.057(1.45)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
•
.035(0.90)
.028(0.70)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.014(0.35)
.010(0.25)
.008(0.20)
.004(0.10)
MAXIMUM .043(1.10)
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.035(0.90)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
.004(0.10)MAX.
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.014(0.35)
TJ
TSTG
.006(0.15)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
1.0
30
.035(0.90)
.028(0.70)
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
Dimensions in inches and (millimeters)
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
WILLAS ELECTRONIC CORP.
Volts
mAmp