SCS715F(SOT 323)

WILLAS
FM120-M+
SCS715F THRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SCHOTTKY
BARRIER
optimize
board DIODE
space.
Low power loss, high efficiency.
•
FEATURES:
• High current capability, low forward voltage drop.
Extra small
power mold type
• High surge capability.
Low VF • Guardring for overvoltage protection.
High reliability
• Ultra high-speed switching.
Pb-Free •package
is available
Silicon epitaxial
planar chip, metal silicon junction.
RoHS product
for
packing
code
suffix ”G” standards of
environmental
• Lead-free parts meet
MIL-STD-19500 /228
Halogen free product for packing code suffix “H”
• RoHS product for packing code suffix "G"
Moisture Sensitivity Level 1
0.146(3.7)
SOT-323
0.130(3.3)
0.071(1.8)
0.056(1.4)
1
3
Halogen free product for packing code suffix "H"
Mechanical data
2
0.040(1.0)
0.024(0.6)
ina
ry
MARKING: 3D
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
℃
Maximum• Mounting
RatingsPosition
@Ta=25
: Any
Parameter
• Weight
: Approximated 0.011 gram Symbol
Peak reverse voltage
0.012(0.3) Typ.
V
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Limit
Unit
40
V
40
V
200
mA
30
mA
RM
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
im
DCRatings
reverse
voltage
VR specified.
at 25℃
ambient temperature unless otherwise
Single
phase surge
half wave,
60Hz, resistive of inductive
load.
Peak
forward
current
IFSM
For
capacitive
load,
derate
current
by
20%
Average forward current
IO
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
RATINGS
Power
dissipation
Marking
Code
PD
R VRRM
Maximum Recurrent Peak Reverse Voltage
Thermal Resistance Junction to Ambient
θJA
VRMS
Maximum RMS Voltage
Tj
Operating
temperature
Maximum DC
Blocking Voltage
VDC
Storage
temperature
Maximum
Average Forward Rectified Current
12
20
13
30
14
40
14
21
28
20
30
TstgIO
Peak Forward Surge Current 8.3 ms single half sine-wave
20015
50
16
60
18
80
10 mW
100
115
150
120
200
35
42
56
70
105
140
150
200
500
40 -55~+125
50
60
-55~+150
IFSM
superimposed on rated CHARACTERISTICS
load (JEDEC method)
ELECTRICAL
(Ta= 25℃ unless otherwise specified)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
Parameter
Operating Temperature Range
CJ
Symbol
Storage Temperature Range
Reverse voltage leakage current
CHARACTERISTICS
Forward
voltageVoltage at 1.0A DC
Maximum Forward
TJ
IR
Test conditions
-55 to +125
Min
80
Typ
=
VR 10V
℃
Max
Unit
-55 to +150
- 65 to +175
TSTG
100 ℃
1.0
30
40
120
℃/W
1
μA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking
Voltageterminals @T A=125℃CT
Capacitance
between
IR
IF=1mA 0.50
0.85
0.37
0.70
V 0.9
0.92
0.5
VR=1V, f=1MHz
2.0
10
pF
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SCS715F THRU
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
better reverse leakage current and thermal resistance.
SOT-323
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.004(0.10)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.087(2.20)
0.040(1.0)
0.024(0.6)
ry
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H .070(1.80)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
ina
Method 2026
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.096(2.45)
.078(2.00)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Pr
eli
m
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.012(0.3) Typ.
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
VRRM
12
20
13
30
14
40
15
50
.010(0.25)
16
18
.003(0.08)
60
80
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.047(1.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
10
100
115
150
120
200
V
1.0
30
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR
.016(0.40)
.008(0.20)
@T A=125℃
0.50
.043(1.10)
.032(0.80)
VF
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.9
0.92
0.5
10
V
m
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.D CORP
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SCS715F THRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
SCS715F ‐T
Tape&Reel: 3 Kpcs/Reel capability. G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single changes. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
on rated load (JEDEC method)
superimposed
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150
Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.