DS520 30WB(WBFBP 02C)

WILLAS
FM120-M+
DS520-30WB
THRU
WBFBP-02C Plastic-Encapsulate Diodes
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SCHOTTKY
DIODE
profile surface mounted application in order to
• LowBARRIER
SOD-123H
optimize board space.
0.146(3.7)
WBFBP-02C
0.130(3.3)
• Low power loss, high efficiency.
DESCRIPTION
• High current capability, low forward voltage drop.
Silicon Epitaxial
Planar
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
FEATURES
• Silicon epitaxial planar chip, metal silicon junction.
Small• Lead-free
Surface Mounting
Type
parts meet environmental
standards of
MIL-STD-19500
/228
Low Reverse Current and Low Forward Voltage
• RoHS product for packing code suffix "G"
High Reliability
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
(1.0×0.6×0.5)
unit: mm
0.071(1.8)
0.056(1.4)
Moisture
Sensitivitydata
Level 1
Mechanical
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
APPLICATION
: Molded plastic,
SOD-123H
• Case
High Speed
Switching
for Detection
,
•
Terminals
:Plated
terminals,
solderable
per MIL-STD-750
For Portable Equipment:(i.e. Mobile
Phone,MP3,
MD,CD-ROM,
Method 2026
DVD-ROM, Note Book PC, etc.)
• Polarity : Indicated by cathode band
Position
: Any
Pb-Free• Mounting
package
is available
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
RoHS product for packing code suffix ”G”
RATINGS
ELECTRICAL
Halogen free MAXIMUM
product for
packingAND
code
suffix “H” CHARACTERISTICS
RATINGS
Marking Code
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
MARKING:
E
For capacitive load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
60
80
100
150
200
V
Pr
el
Maximum Recurrent Peak Reverse Voltage
Maximum DCRatings
Blocking Voltage
20Single
30 Diode
40@Ta=25℃
50
VDC
Maximum
and Electrical Characteristics,
IO
Parameter
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
1.0
30
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
DC reverse voltage
VR
Mean rectifying current
IO
Storage Temperature Range
IFSM
TSTG
Peak forward surge current
CHARACTERISTICS
Unit
V
℃
mA
-55 to +150
- 65 to +175
500
A
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Junction
temperature
Maximum Forward
Voltage at 1.0A DC
TVj F
Maximum Average Reverse Current at @T A=25℃
40
120
100
-55 to +125
TJ
Operating Temperature Range
CJ
Typical Junction Capacitance (Note 1)
30
RΘJA
Typical Thermal Resistance (Note 2)
Value
A
Rated DC Blocking Voltage
Operating/Storage
temperature @T A=125℃
150 0.70
0.50
0.85
℃
0.9
0.92
0.5
IR
-55~+150
Tstg
V
10
℃
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From
Junction to Ambient
Electrical
Ratings
@Ta=25℃
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Forward voltage
VF
0.45
V
IF=10mA
Reverse current
IR
0.5
μA
VR=10V
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
DS520-30WBTHRU
WBFBP-02C
Plastic-Encapsulate
Diodes
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
WBFBP-02C
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.017(0.45)REF.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.000(0.01)REF.
Mechanical data
.018(0.45)
.012(0.30)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
ry
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Pr
eli
m
RATINGS
.041(1.05)
Marking Code
.0016(0.400)REF.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.037(0.95)
Maximum Recurrent Peak Reverse
Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
21
28
.004(0.10)
30
40
.000(0.01)
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
13
30
.022(0.55)
.018(0.45)
0.024(0.6)
.010(0.25)
ina
.026(0.65)
.022(0.55)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.014(0.35)0.040(1.0)
@T A=125℃
0.50
0.70
0.85
0.9
0.5
IR
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.B
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
WBFBP-02C
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
DS520-30WB
THRU
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Ordering
Information:
better reverse
leakage current and thermal resistance.
• Low profile surface mounted application in order to
Device PN optimize board
space.
SOD-123H
Packing (1) (2)
0.146(3.7)
power loss, high efficiency.
• LowDS520‐30WB ‐T
G ‐WS Tape&Reel: 10 Kpcs/Reel 0.130(3.3)
• High current capability, low forward voltage drop.
Note: (1)
surge capability.
• High Packing code, Tape & Reel Packing
for overvoltage protection.
• Guardring
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
Mechanical data
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product im
Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase
half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
WILLAS products are not designed, intended or authorized for use in medical, Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC
Blocking Voltage
NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures. Pr
el
Marking Code
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.