NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 25 A, 1200 V VCEsat = 1.85 V Eoff = 0.8 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices C Typical Applications G • Inductive Heating • Consumer Appliances • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 200 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 50 25 200 G C TO−247 CASE 340L STYLE 4 E A A 50 25 MARKING DIAGRAM 25N120IHL AYWWG W 192 77 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB25N120IHLWG © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 2 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB25N120IHLW/D NGTB25N120IHLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.65 °C/W Thermal resistance junction−to−case, for Diode RqJC 2.0 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 150°C VCEsat − − 1.85 2.1 2.3 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 4700 − pF Coes − 155 − Cres − 100 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge nC Qg 200 Qge 38 Qgc 100 TJ = 25°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V td(off) 235 tf 160 Eoff 0.8 mJ TJ = 125°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V td(off) 250 ns tf 225 Eoff 1.9 VGE = 0 V, IF = 25 A VGE = 0 V, IF = 25 A, TJ = 150°C VF 1.7 1.8 VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns mJ DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 1.8 V NGTB25N120IHLWG TYPICAL CHARACTERISTICS 120 VGE = 20 to 13 V TJ = 25°C 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 11 V 10 V 80 60 9V 40 20 0 8V 7V 0 1 2 3 4 40 8V 20 7V 0 1 2 3 4 Figure 2. Output Characteristics 5 120 IC, COLLECTOR CURRENT (A) 100 11 V 80 10 V TJ = −40°C 60 40 9V 7V 20 8V 0 1 2 3 4 100 80 60 40 5 TJ = 150°C 20 0 TJ = 25°C 0 5 10 15 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 120 Cies IF, FORWARD CURRENT (A) IC, COLLECTOR CURRENT (A) 9V Figure 1. Output Characteristics 10,000 C, CAPACITANCE (pF) 10 V 60 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 to 13 V 1000 100 Coes Cres 10 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 0 100 0 5 VGE = 20 to 11 V TJ = 150°C 0 25 50 75 100 125 150 175 100 TJ = 25°C 60 40 20 0 200 TJ = 125°C 80 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 3 3.0 NGTB25N120IHLWG TYPICAL CHARACTERISTICS Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 16 200 V 14 400 V 12 600 V 10 8 6 4 2 0 0 50 100 200 150 250 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 20 40 60 80 100 120 140 160 0.6 0.4 0.2 0 0 20 40 60 80 100 120 3.0 2.5 2.0 td(off) 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 14 18 22 26 30 34 38 42 1.0 0.5 0 10 14 18 22 26 30 34 38 42 3.0 2.5 2.0 1.5 1.0 VCE = 600 V VGE = 15 V IC = 25 A TJ = 150°C 0.5 0 5 15 25 35 45 55 65 IC, COLLECTOR (A) Rg, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg http://onsemi.com 4 160 1.5 Figure 10. Energy Loss vs. IC 10 140 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W Figure 9. Switching Time vs. Temperature Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.8 IC, COLLECTOR (A) tf 1 1.0 TEMPERATURE (°C) 1000 10 1.2 Figure 8. Energy Loss vs. Temperature tf 0 1.4 Figure 7. Typical Gate Charge Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1 1.6 TEMPERATURE (°C) td(off) 10 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W QG, GATE CHARGE (nC) 1000 100 2.0 1.8 75 85 NGTB25N120IHLWG TYPICAL CHARACTERISTICS 2.5 2.0 td(off) 1000 ENERGY (mJ) SWITCHING TIME (ns) 10,000 tf 100 10 5 15 25 35 45 55 65 0 85 75 375 425 475 525 575 625 675 725 775 Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) tf 100 VGE = 15 V IC = 25 A Rg = 10 W TJ = 150°C 375 425 475 525 575 625 675 725 50 ms 100 100 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 775 1 ms 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) VGE = 15 V IC = 25 A Rg = 10 W TJ = 150°C 0.5 td(off) 1 1.0 VCE = 600 V VGE = 15 V IC = 25 A TJ = 150°C 1000 10 1.5 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB25N120IHLWG TYPICAL CHARACTERISTICS 1 R(t) (°C/W) 50% Duty Cycle RqJC = 0.65 20% 0.1 10% Junction R1 5% 1% C1 C2 Case 0.00001 Ri (°C/W) 0.02659 0.06231 0.10246 0.2121 0.1057 Cn ti (sec) 1.0E−4 1.76E−4 0.002 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance 10 RqJC = 2.0 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% Junction R1 1% C1 Case 0.00001 C2 Ri (°C/W) 0.25813 0.57713 0.67147 0.38693 0.1057 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTB25N120IHLWG Figure 21. Definition of Turn On Waveform http://onsemi.com 7 NGTB25N120IHLWG Figure 22. Definition of Turn Off Waveform http://onsemi.com 8 NGTB25N120IHLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J H G D 3 PL 0.25 (0.010) M Y Q MILLIMETERS DIM MIN MAX A 20.32 21.08 B 15.75 16.26 C 4.70 5.30 D 1.00 1.40 E 1.90 2.60 F 1.65 2.13 G 5.45 BSC H 1.50 2.49 J 0.40 0.80 K 19.81 20.83 L 5.40 6.20 N 4.32 5.49 P --4.50 Q 3.55 3.65 U 6.15 BSC W 2.87 3.12 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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