NGTB25N120IHLW D

NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
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25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are Pb−Free Devices
C
Typical Applications
G
• Inductive Heating
• Consumer Appliances
• Soft Switching
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
A
Gate−emitter voltage
VGE
$20
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
50
25
200
G
C
TO−247
CASE 340L
STYLE 4
E
A
A
50
25
MARKING DIAGRAM
25N120IHL
AYWWG
W
192
77
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120IHLWG
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 2
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB25N120IHLW/D
NGTB25N120IHLWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.65
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
2.0
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VCEsat
−
−
1.85
2.1
2.3
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
4700
−
pF
Coes
−
155
−
Cres
−
100
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
nC
Qg
200
Qge
38
Qgc
100
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
235
tf
160
Eoff
0.8
mJ
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
250
ns
tf
225
Eoff
1.9
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 150°C
VF
1.7
1.8
VCE = 600 V, IC = 25 A, VGE = 15 V
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
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2
1.8
V
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
120
VGE = 20 to 13 V
TJ = 25°C
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
11 V
10 V
80
60
9V
40
20
0
8V
7V
0
1
2
3
4
40
8V
20
7V
0
1
2
3
4
Figure 2. Output Characteristics
5
120
IC, COLLECTOR CURRENT (A)
100
11 V
80
10 V
TJ = −40°C
60
40
9V
7V
20
8V
0
1
2
3
4
100
80
60
40
5
TJ = 150°C
20
0
TJ = 25°C
0
5
10
15
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
120
Cies
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
9V
Figure 1. Output Characteristics
10,000
C, CAPACITANCE (pF)
10 V
60
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 to 13 V
1000
100
Coes
Cres
10
80
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
100
0
5
VGE = 20 to 11 V
TJ = 150°C
0
25
50
75
100
125
150
175
100
TJ = 25°C
60
40
20
0
200
TJ = 125°C
80
0
0.5
1.0
1.5
2.0
2.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Diode Forward Characteristics
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3
3.0
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
Eoff, TURN−OFF SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
16
200 V
14
400 V
12
600 V
10
8
6
4
2
0
0
50
100
200
150
250
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
20
40
60
80
100
120
140
160
0.6
0.4
0.2
0
0
20
40
60
80
100
120
3.0
2.5
2.0
td(off)
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
14
18
22
26
30
34
38
42
1.0
0.5
0
10
14
18
22
26
30
34
38
42
3.0
2.5
2.0
1.5
1.0
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
0.5
0
5
15
25
35
45
55
65
IC, COLLECTOR (A)
Rg, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Energy Loss vs. Rg
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4
160
1.5
Figure 10. Energy Loss vs. IC
10
140
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
Figure 9. Switching Time vs. Temperature
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
0.8
IC, COLLECTOR (A)
tf
1
1.0
TEMPERATURE (°C)
1000
10
1.2
Figure 8. Energy Loss vs. Temperature
tf
0
1.4
Figure 7. Typical Gate Charge
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1
1.6
TEMPERATURE (°C)
td(off)
10
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
QG, GATE CHARGE (nC)
1000
100
2.0
1.8
75
85
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
2.5
2.0
td(off)
1000
ENERGY (mJ)
SWITCHING TIME (ns)
10,000
tf
100
10
5
15
25
35
45
55
65
0
85
75
375 425
475
525
575
625
675
725 775
Rg, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. Rg
Figure 14. Energy Loss vs. VCE
1000
IC, COLLECTOR CURRENT (A)
tf
100
VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
375 425
475
525
575
625
675
725
50 ms
100
100 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
775
1 ms
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
0.5
td(off)
1
1.0
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
1000
10
1.5
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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5
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
1
R(t) (°C/W)
50% Duty Cycle
RqJC = 0.65
20%
0.1 10%
Junction R1
5%
1%
C1
C2
Case
0.00001
Ri (°C/W)
0.02659
0.06231
0.10246
0.2121
0.1057
Cn
ti (sec)
1.0E−4
1.76E−4
0.002
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
10
RqJC = 2.0
R(t) (°C/W)
1
0.1
50% Duty Cycle
20%
10%
5%
Junction R1
1%
C1
Case
0.00001
C2
Ri (°C/W)
0.25813
0.57713
0.67147
0.38693
0.1057
Cn
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
Figure 19. Diode Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTB25N120IHLWG
Figure 21. Definition of Turn On Waveform
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7
NGTB25N120IHLWG
Figure 22. Definition of Turn Off Waveform
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8
NGTB25N120IHLWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
H
G
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
DIM MIN
MAX
A
20.32
21.08
B
15.75
16.26
C
4.70
5.30
D
1.00
1.40
E
1.90
2.60
F
1.65
2.13
G
5.45 BSC
H
1.50
2.49
J
0.40
0.80
K
19.81
20.83
L
5.40
6.20
N
4.32
5.49
P
--4.50
Q
3.55
3.65
U
6.15 BSC
W
2.87
3.12
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
S
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NGTB25N120IHLW/D