NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 40 A, 1200 V VCEsat = 2.0 V Eoff = 1.6 mJ Features • Low Saturation Voltage using NPT Trench with Field Stop • • • • • Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C G Typical Applications • Solar Inverter • UPS Inverter E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 320 Gate−emitter voltage VGE $20 Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C A 80 40 320 G C TO−247 CASE 340L STYLE 4 E A A 80 40 MARKING DIAGRAM A V 40N120FL AYWWG W 260 104 TSC 10 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N120FLWG © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120FLW/D NGTB40N120FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.48 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat 1.50 − 2.0 2.2 2.2 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 1.0 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 10,000 − pF Coes − 240 − Cres − 180 − Qg − 415 − Qge − 80 − Qgc − 170 − td(on) − 130 − tr − 41 − td(off) − 385 − tf − 140 − Eon − 2.6 − Turn−off switching loss Eoff − 1.6 − Total switching loss Ets − 4.2 − Turn−on delay time td(on) − 130 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V Rise time tr − 42 − td(off) − 400 − tf − 230 − Eon − 3.0 − Turn−off switching loss Eoff − 2.8 − Total switching loss Ets − 5.8 − Turn−off delay time Fall time Turn−on switching loss TJ = 125°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V http://onsemi.com 2 ns mJ ns mJ NGTB40N120FLWG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF − − 2.7 3.5 3.5 V TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms trr − 200 − ns Qrr − 1.5 − mc Irrm − 15 − A trr − 260 − ns Qrr − 2.0 − mc Irrm − 22 − A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 125°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current http://onsemi.com 3 NGTB40N120FLWG TYPICAL CHARACTERISTICS 300 TJ = 25°C 350 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 400 VGE = 20 to 13 V 300 250 200 11 V 150 10 V 100 9V 50 0 8V 0 1 2 3 4 5 7V 7 6 11 V 150 10 V 100 9V 8V 50 7V 0 1 2 3 4 5 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 7 8 250 TJ = −40°C VGE = 20 to 13 V 250 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 VCE, COLLECTOR−EMITTER VOLTAGE (V) 300 11 V 200 150 10 V 100 9V 50 7V 8V 0 200 150 100 50 TJ = 150°C TJ = 25°C 0 0 1 2 3 4 5 6 7 0 8 8 4 VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 16 100000 3.5 3.0 IC = 80 A 2.5 IC = 40 A 2.0 1.5 IC = 10 A 1.0 IC = 5 A Cies 10000 1000 Coes 100 Cres 0.5 0.0 −50 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 0 8 VGE = 20 to 13 V TJ = 150°C −20 10 40 70 100 130 160 10 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 4 NGTB40N120FLWG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 35 30 25 20 TJ = 25°C 15 TJ = 150°C 10 5 0 0 50 100 150 200 250 300 350 400 450 10 5 0 0 60 240 300 360 Figure 8. Typical Gate Charge 420 480 1000 td(off) SWITCHING TIME (ns) Eon 2 Eoff 1.5 1 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0.5 0 20 40 60 80 100 120 140 tf td(on) 100 tr 10 1 160 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 8 td(off) 7 Eoff 6 5 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 180 Figure 7. Diode Forward Characteristics 2.5 Eon 4 3 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 2 1 0 120 QG, GATE CHARGE (nC) 3 SWITCHING LOSS (mJ) VCE = 600 V VF, FORWARD VOLTAGE (V) 3.5 0 15 5 15 25 35 45 55 65 75 100 tr 10 1 85 tf td(on) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 5 75 85 NGTB40N120FLWG TYPICAL CHARACTERISTICS 100000 12 VCE = 600 V VGE = 15 V IC = 40 A TJ = 150°C 8 td(off) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 10 Eon 6 Eoff 4 10000 td(on) tf 1000 tr VCE = 600 V VGE = 15 V IC = 40 A TJ = 150°C 10 2 0 5 15 25 35 45 55 65 75 1 85 45 55 65 75 Figure 14. Switching Time vs. Rg 85 10000 td(off) Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 35 Figure 13. Switching Loss vs. Rg Eoff 3.2 2.4 1.6 VGE = 15 V IC = 40 A TJ = 150°C Rg = 10 W 0.8 375 425 475 525 575 625 675 725 tf td(on) 1000 tr 10 VGE = 15 V IC = 40 A TJ = 150°C Rg = 10 W 1 375 425 775 475 525 575 625 675 725 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 775 1000 1000 50 ms 100 100 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 25 Rg, GATE RESISTOR (W) 4 1 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 15 Rg, GATE RESISTOR (W) 4.8 0 5 1 10 100 100 10 1 1000 VGE = 15 V, TC = 125°C 1 10 100 1000 10,000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 6 NGTB40N120FLWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 1 RqJC = 0.48 50% Duty Cycle 0.1 20% Junction R1 10% 5% 0.01 Rn C2 Cn Case Ci = ti/Ri 2% C1 1% 0.001 0.000001 R2 Ri (°C/W) 0.01616 0.04030 0.060 0.090 0.176 0.093 ti (sec) 1.0E−4 1.76E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.5 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn Case C1 Single Pulse 0.00001 C2 Ri (°C/W) 0.19655 0.414 0.5 0.345 0.0934 Ci = ti/Ri 1% 0.001 0.000001 R2 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 7 10 100 100 NGTB40N120FLWG Figure 22. Definition of Turn On Waveform http://onsemi.com 8 NGTB40N120FLWG Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 NGTB40N120FLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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