NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 30 A, 1200 V VCEsat = 1.75 V Eoff = 1.0 mJ Features • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices C Typical Applications G • Inductive Heating • Consumer Appliances • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 320 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 60 30 320 G C TO−247 CASE 340L STYLE 4 E A A 60 30 MARKING DIAGRAM 30N120IHL AYWWG W 260 104 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N120IHLWG © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N120IHL/D NGTB30N120IHLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.48 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat − − 1.75 2.1 2.2 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA Cies − 10,400 − pF Coes − 245 − Cres − 185 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge nC Qg 420 Qge 94 Qgc 178 TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) 360 tf 150 Eoff 1.0 mJ TJ = 125°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) 380 ns tf 216 Eoff 2.0 VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 150°C VF 1.5 1.7 VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns mJ DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 1.7 V NGTB30N120IHLWG TYPICAL CHARACTERISTICS 10 V 100 80 9V 60 40 20 0 8V 7V 0 1 2 4 80 11 V 60 40 8V 20 7V 0 1 2 3 4 5 Figure 1. Output Characteristics Figure 2. Output Characteristics 160 VGE = 20 to 11 V 10 V 100 80 60 9V 40 7V 20 8V 0 0 1 2 3 4 140 120 100 80 60 40 TJ = 150°C TJ = 25°C 20 0 5 0 2 4 6 8 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 12 120 IF, FORWARD CURRENT (A) 100,000 CAPACITANCE (pF) 15 V 100 0 5 120 Cies 10,000 1000 Coes 100 Cres 10 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = −40°C 140 3 VGE = 15 to 20 V TJ = 150°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 140 VGE = 20 to 11 V TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 0 10 20 30 40 50 60 70 90 90 100 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 3 3.0 NGTB30N120IHLWG TYPICAL CHARACTERISTICS Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 16 VCE = 600 V 12 8 4 0 0 50 100 150 200 250 300 350 400 450 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 20 40 60 80 100 120 140 160 20 40 60 80 100 120 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 22 140 26 30 34 38 42 46 50 54 58 62 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 4 3.5 3 2.5 2 1.5 1 0.5 0 18 22 26 30 34 38 42 46 50 54 58 62 4.5 4 3.5 3 2.5 2 1.5 VCE = 600 V VGE = 15 V IC = 30 A TJ = 150°C 1 0.5 0 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg http://onsemi.com 4 160 4.5 Figure 10. Energy Loss vs. IC Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0 Figure 9. Switching Time vs. Temperature td(off) 18 0 IC, COLLECTOR CURRENT (A) tf 1 0.5 TJ, JUNCTION TEMPERATURE (°C) 1000 10 1 Figure 8. Energy Loss vs. Temperature tf 0 1.5 Figure 7. Typical Gate Charge Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1 2 TJ, JUNCTION TEMPERATURE (°C) td(off) 10 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W QG, GATE CHARGE (nC) 1000 100 2.5 75 85 NGTB30N120IHLWG TYPICAL CHARACTERISTICS 3.5 Eoff, TURN−OFF SWITCHING LOSS (mJ) 10000 SWITCHING TIME (ns) td(off) 1000 tf 100 VCE = 600 V VGE = 15 V IC = 30 A TJ = 150°C 10 1 5 15 25 35 45 55 65 75 85 1.0 VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 0.5 0 375 425 475 525 575 625 725 775 675 Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) tf 100 VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 375 425 475 525 575 625 675 725 100 ms 1 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 775 50 ms 100 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) td(off) 1 2.0 Rg, GATE RESISTOR (W) 1000 10 3.0 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 10,000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N120IHLWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 1 RqJC = 0.48 50% Duty Cycle 0.1 20% Junction R1 10% 5% 0.01 Rn C2 Cn Case Ci = ti/Ri 2% C1 1% 0.001 0.000001 R2 Ri (°C/W) 0.01616 0.04030 0.060 0.090 0.176 0.093 ti (sec) 1.0E−4 1.76E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.5 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn Case C1 Single Pulse 0.00001 C2 Ri (°C/W) 0.19655 0.414 0.5 0.345 0.0934 Ci = ti/Ri 1% 0.001 0.000001 R2 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 100 NGTB30N120IHLWG Figure 21. Definition of Turn Off Waveform http://onsemi.com 7 NGTB30N120IHLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J H G M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W S INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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